公开(公告)号：US09570311B2

公开(公告)日：2017-02-14

申请号：US13370946

申请日：2012-02-10

申请人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

发明人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC分类号： H01L21/304 ,  B24B37/04 ,  B24B37/00

CPC分类号： H01L21/304 ,  B24B37/00 ,  B24B37/042

摘要： Methods of thinning a plurality of semiconductor wafers and apparatuses for carrying out the same are disclosed. A grinding module within a set of grinding modules receives and grinds a semiconductor wafer. A polishing module receives the semiconductor wafer from the grinding module and polishes the wafer. The polishing module is configured to polish the semiconductor wafer in less time than the grinding module is configured to grind the corresponding wafer.

摘要翻译： 公开了使多个半导体晶片变薄的方法及其实施方法。 一组研磨模块内的研磨模块接收并研磨半导体晶片。 抛光模块从研磨模块接收半导体晶片并抛光晶片。 抛光模块被配置为在比研磨模块构造成磨碎相应晶片的时间少的时间内抛光半导体晶片。

公开(公告)号：US09676114B2

公开(公告)日：2017-06-13

申请号：US13408327

申请日：2012-02-29

申请人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

发明人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC分类号： B26D1/143 ,  B28D5/02 ,  B24D5/02 ,  B24D5/12 ,  B23D61/02 ,  B28D1/04 ,  B26D7/18 ,  B28D1/12

CPC分类号： B26D7/18 ,  B23D61/02 ,  B23D61/021 ,  B24D5/02 ,  B24D5/12 ,  B26D1/143 ,  B28D1/04 ,  B28D1/121 ,  B28D5/022 ,  Y10T83/0448 ,  Y10T83/9372

摘要： A wafer edge trim blade includes a round blade body and at least one slot formed inward from an outside edge of the round blade body. The at least one slot is configured to remove debris generated during wafer edge trimming using the wafer edge trim blade.

公开(公告)号：US20140024170A1

公开(公告)日：2014-01-23

申请号：US13551457

申请日：2012-07-17

申请人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

发明人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L21/02087 ,  H01L21/0209 ,  H01L27/14687

摘要： A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.

摘要翻译： 一种方法包括在半导体衬底上形成顶部金属线，其中半导体衬底是具有斜面的晶片的一部分。 当顶部金属线暴露时，在斜面上提供蚀刻剂，其中用蚀刻剂喷射的晶片的区域具有形成具有第一直径的第一环的内部限定线。 进行修整步骤以修剪晶片的边缘部分，其中晶片的剩余部分的边缘具有基本上等于或小于第一直径的第二直径。

公开(公告)号：US20130023188A1

公开(公告)日：2013-01-24

申请号：US13188028

申请日：2011-07-21

申请人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

发明人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

IPC分类号： B24B1/00 ,  B24B7/00

CPC分类号： B24B7/228 ,  B24D7/14

摘要： A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.

公开(公告)号：US09120194B2

公开(公告)日：2015-09-01

申请号：US13188028

申请日：2011-07-21

申请人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

发明人： Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Chun-Ting Kuo

IPC分类号： B24B7/22 ,  B24D7/14

CPC分类号： B24B7/228 ,  B24D7/14

摘要： A grinding wheel comprises an outer base with a first attached grain pad; and an inner frame with a second attached grain pad; and a spindle axis shared by the outer base and the inner frame, wherein at least one of the outer base and the inner frame can move independently along the shared spindle axis; and wherein the outer base, the inner frame, and the shared spindle axis all have a same center. A grinding system comprises an above said grinding wheel, and a wheel head attached to the shared spindle axis, capable of moving vertically, in addition to a motor driving the grinding wheel to spin; and a chuck table for fixing a wafer on top of the chuck table; wherein the grinding wheel overlaps a portion of the chuck table, each capable of spinning to the opposite direction of another.

摘要翻译： 砂轮包括具有第一附接谷物垫的外基部; 以及具有第二附着谷物垫的内框架; 以及由所述外基座和所述内框架共享的主轴，其中所述外基座和所述内框架中的至少一个可以沿着所述共享主轴轴线独立地移动; 并且其中所述外基座，所述内框架和所述共享主轴轴线都具有相同的中心。 研磨系统包括上述砂轮和附接到共享主轴轴线的能够垂直移动的砂轮头，除了驱动砂轮旋转的马达之外， 以及用于将晶片固定在卡盘台顶部的卡盘台; 其中所述砂轮与所述卡盘台的一部分重叠，所述卡盘台的每一个能够沿相反方向旋转。

公开(公告)号：US09064770B2

公开(公告)日：2015-06-23

申请号：US13551457

申请日：2012-07-17

申请人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

发明人： Chun-Ting Kuo ,  Kei-Wei Chen ,  Ying-Lang Wang ,  Kuo-Hsiu Wei

IPC分类号： H01L21/02 ,  H01L27/146

CPC分类号： H01L27/1464 ,  H01L21/02087 ,  H01L21/0209 ,  H01L27/14687

摘要： A method includes forming top metal lines over a semiconductor substrate, wherein the semiconductor substrate is a portion of a wafer having a bevel. When the top metal lines are exposed, an etchant is supplied on the bevel, wherein regions of the wafer sprayed with the etchant has an inner defining line forming a first ring having a first diameter. A trimming step is performed to trim an edge portion of the wafer, wherein an edge of a remaining portion of the wafer has a second diameter substantially equal to or smaller than the first diameter.

摘要翻译： 一种方法包括在半导体衬底上形成顶部金属线，其中半导体衬底是具有斜面的晶片的一部分。 当顶部金属线暴露时，在斜面上提供蚀刻剂，其中用蚀刻剂喷射的晶片的区域具有形成具有第一直径的第一环的内部限定线。 进行修整步骤以修剪晶片的边缘部分，其中晶片的剩余部分的边缘具有基本上等于或小于第一直径的第二直径。

公开(公告)号：US09721984B2

公开(公告)日：2017-08-01

申请号：US13445766

申请日：2012-04-12

申请人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L27/146

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14687

摘要： Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.

公开(公告)号：US20130273686A1

公开(公告)日：2013-10-17

申请号：US13445766

申请日：2012-04-12

申请人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

发明人： Mu-Han Cheng ,  Kuo-Hsiu Wei ,  Kei-Wei Chen ,  Ying-Lang Wang

IPC分类号： H01L31/0232 ,  H01L21/28

CPC分类号： H01L27/14623 ,  H01L27/1464 ,  H01L27/14687

摘要： Semiconductor devices and back side illumination (BSI) sensor manufacturing methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a workpiece and forming an integrated circuit on a front side of the workpiece. A grid of a conductive material is formed on a back side of the workpiece using a damascene process.

摘要翻译： 公开了半导体器件和背面照明（BSI）传感器制造方法。 在一个实施例中，制造半导体器件的方法包括提供工件并在工件的前侧形成集成电路。 使用镶嵌工艺在工件的背面上形成导电材料的格栅。

公开(公告)号：US06769959B2

公开(公告)日：2004-08-03

申请号：US10050314

申请日：2002-01-15

申请人： Kei-Wei Chen ,  Ting-Chun Wang ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang ,  Ming-Wen Chen ,  Kuo-Hsiu Wei

发明人： Kei-Wei Chen ,  Ting-Chun Wang ,  Shih-Tzung Chang ,  Yu-Ku Lin ,  Ying-Lang Wang ,  Ming-Wen Chen ,  Kuo-Hsiu Wei

IPC分类号： B24B100

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A method and system is disclosed for reducing slurry usage in a chemical mechanical polishing operation utilizing at least one polishing pad thereof. Slurry can be intermittently supplied to a chemical mechanical polishing device. The slurry is generally flushed so that a portion of said slurry is trapped in a plurality of pores of at least one polishing pad associated with said chemical mechanical polishing device, wherein only a minimum amount of said slurry necessary is utilized to perform said chemical mechanical polishing operation, thereby reducing slurry usage and maintaining a consistent level of slurry removal rate performance and a decrease in particle defects thereof. The present invention thus discloses a method and system for intermittently delivering slurry to a chemical mechanical polishing device in a manner that significantly conserves slurry usage.

摘要翻译： 公开了一种利用其至少一个抛光垫在化学机械抛光操作中减少浆料使用的方法和系统。 浆料可以间歇地供应到化学机械抛光装置。 通常将浆料冲洗，使得所述浆料的一部分被捕获在与所述化学机械抛光装置相关联的至少一个抛光垫的多个孔中，其中仅使用最少量的所需浆料来进行所述化学机械抛光 操作，从而减少浆料的使用并保持一致的浆料去除速率性能水平和其颗粒缺陷的减少。 因此，本发明公开了一种用于以显着节省浆料使用的方式间歇地将浆料输送到化学机械抛光装置的方法和系统。

公开(公告)号：US06828226B1

公开(公告)日：2004-12-07

申请号：US10042573

申请日：2002-01-09

申请人： Kei-Wei Chen ,  Kuo-Hsiu Wei ,  Yu-Kin Lin ,  Ting-Chun Wang ,  Ying-Lang Wang ,  Shih-Tzung Chang

发明人： Kei-Wei Chen ,  Kuo-Hsiu Wei ,  Yu-Kin Lin ,  Ting-Chun Wang ,  Ying-Lang Wang ,  Shih-Tzung Chang

IPC分类号： H01L214763

CPC分类号： H01L21/3212 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02074 ,  H01L21/31053 ,  H01L21/7684

摘要： For 0.18 micron technology, it is common practice to use silicon oxynitride as an anti-reflective layer for defining the via etch patterns. It has however been found that, using current technology, residual particles of oxynitride get left behind. The present invention solves this problem by subjecting the surface from which the silicon oxynitride was removed to a high pressure rinse of an aqueous solution that includes a surfactant such as tetramethyl ammonium hydroxide or isopropyl alcohol. These surfactants serve to modify the hydrophobic behavior of the silicon oxynitride particles so that they no longer cling to the surface.

摘要翻译： 对于0.18微米技术，通常的做法是使用氮氧化硅作为抗反射层来定义通孔蚀刻图案。 然而，已经发现，使用当前的技术，留下残留的氮氧化物颗粒。 本发明通过将去除了氮氧化硅的表面经受包括诸如四甲基氢氧化铵或异丙醇的表面活性剂的水溶液的高压冲洗来解决这个问题。 这些表面活性剂用于改变氮氧化硅颗粒的疏水性能，使得它们不再粘附到表面。