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    Magnetic etching process, especially for magnetic or magnetooptic recording
    1.
    发明授权
    Magnetic etching process, especially for magnetic or magnetooptic recording 有权
    磁性蚀刻工艺，特别适用于磁性或磁光记录

    公开(公告)号：US07132222B2

    公开(公告)日：2006-11-07

    申请号：US10825454

    申请日：2004-04-14

    申请人： Claude Chappert ,  Harry Bernas ,  Jacques Ferre

    发明人： Claude Chappert ,  Harry Bernas ,  Jacques Ferre

    IPC分类号： G03C5/00 ,  G11B11/10 ,  H01F41/14

    CPC分类号： G11B5/855 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y25/00 ,  B82Y40/00 ,  G02B6/1225 ,  G02F1/09 ,  G11B5/743 ,  G11B5/746 ,  G11B11/10582 ,  H01F10/123 ,  H01F10/3286 ,  H01F41/303 ,  H01F41/34

    摘要： Process for writing on a material, in which said material is irradiated by means of a beam of light ions, such as for example He+ ions, said beam of light ions having an energy of the order of or less than a hundred keV, wherein this material comprises a plurality of superposed thin-layers, at least one of said thin layers being magnetic and in that one or more regions having sizes of the order of 1 micrometer or less are irradiated, the irradiation dose being controlled so as to be a few 1016 ions/cm2 or less, the irradiation modifying the composition of atomic planes in the material at one or more interfaces between two layers of the latter.

    摘要翻译： 在材料上书写的方法，其中所述材料通过光束离子照射，例如He + +离子，所述光束离子具有等级或 小于100keV，其中该材料包括多个重叠的薄层，所述薄层中的至少一个是磁性的，并且辐射具有1微米或更小的尺寸的一个或多个区域，照射剂量 被控制为几十个16 /离子/ cm 2以下，照射在两层之间的一个或多个界面处改变材料中原子平面的组成 的后者。

    Method of treating materials by irradiation
    2.
    发明授权
    Method of treating materials by irradiation 有权
    辐照处理材料的方法

    公开(公告)号：US06605321B1

    公开(公告)日：2003-08-12

    申请号：US09619797

    申请日：2000-07-20

    申请人： Dafiné Ravelosona-Ramasitera ,  Claude Chappert ,  Véronique Mathet ,  Harry Bernas

    发明人： Dafiné Ravelosona-Ramasitera ,  Claude Chappert ,  Véronique Mathet ,  Harry Bernas

    IPC分类号： B05D306

    CPC分类号： C23C14/5833 ,  C23C14/58 ,  C23C14/5893 ,  C30B1/02 ,  C30B33/00

    摘要： The invention provides a method of treating a material to cause the material to evolve from one phase to a more ordered phase, the method comprising an operation of irradiating the material in which the irradiating particles are suitable, by their nature and by their energy, for inducing displacements of the atoms in the material towards positions that favor ordering of the material. Advantageously, the invention also provides apparatus for magnetically recording information, the apparatus comprising a material deposited on a substrate at a temperature of less than 350° C. and that has been subjected to irradiation with irradiating particles that are suitable, by their nature and their energy, for inducing displacements of the atoms in the material towards positions that favor relaxation of the material.

    摘要翻译： 本发明提供了一种处理材料以使材料从一相发展到更有序相的方法，该方法包括将辐照粒子适合的材料按其性质和能量照射到 导致材料中原子的位移朝向有利于材料顺序的位置。 有利地，本发明还提供用于磁记录信息的装置，该装置包括在小于350℃的温度下沉积在基板上的材料，并且已经经受照射适合于其性质的照射颗粒的材料 能量，用于诱导材料中原子的位移朝向有利于材料松弛的位置。

    Magnetic memory device
    3.
    发明申请
    Magnetic memory device 失效
    磁存储器件

    公开(公告)号：US20080037179A1

    公开(公告)日：2008-02-14

    申请号：US11638379

    申请日：2006-12-14

    申请人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura ,  Thibault Devolder ,  Paul Crozat ,  Joo-von Kim ,  Claude Chappert

    发明人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura ,  Thibault Devolder ,  Paul Crozat ,  Joo-von Kim ,  Claude Chappert

    IPC分类号： G11B5/33

    CPC分类号： G11C11/16 ,  Y10S977/935

    摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.

    摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。

    MRAM element
    4.
    发明申请
    MRAM element 有权
    MRAM元素

    公开(公告)号：US20050237796A1

    公开(公告)日：2005-10-27

    申请号：US11114305

    申请日：2005-04-25

    申请人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    发明人： Joo-Von Kim ,  Thibaut Devolder ,  Claude Chappert ,  Cedric Maufront ,  Richard Fournel

    IPC分类号： G11C11/16 ,  G11C11/00

    CPC分类号： G11C11/16

    摘要： A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.

    摘要翻译： 一种磁阻存储元件，包括被阻挡层分离的被俘获的磁区和自由磁区。 自由磁区包括至少两个反铁磁耦​​合铁磁层的层叠，与每个层相关联的层磁矩矢量，所得到的磁矩矢量等于具有振幅小于的磁矩矢量的和 至少40％的振幅最大振幅的磁矩矢量。 对于至少两个铁磁层，各向异性场和/或去磁场张量不相同，由此在施加外部磁场时层磁矩矢量的角度偏差是不同的，这使得能够至少两个 直接写入存储器元件的方法，以及它的初始化。

    Logical memory architecture, in particular for MRAM, PCRAM, or RRAM
    5.
    发明授权
    Logical memory architecture, in particular for MRAM, PCRAM, or RRAM 有权
    逻辑内存架构，特别是MRAM，PCRAM或RRAM

    公开(公告)号：US09305607B2

    公开(公告)日：2016-04-05

    申请号：US14007017

    申请日：2012-03-23

    申请人： Weisheng Zhao ,  Sumanta Chaudhuri ,  Claude Chappert ,  Jacques-Olivier Klein

    发明人： Weisheng Zhao ,  Sumanta Chaudhuri ,  Claude Chappert ,  Jacques-Olivier Klein

    IPC分类号： G11C11/00 ,  G11C5/06 ,  G11C11/16 ,  G11C13/00

    CPC分类号： G11C5/06 ,  G11C5/063 ,  G11C11/16 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C2213/77

    摘要： An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

    摘要翻译： 提供了一种架构和方法，用于并行或串行地读取和写入基于内置于交叉开关结构中的两端二进制存储器单元的二维矩阵的电子存储器组件。 该组件包括位于矩阵之外的逻辑列选择器，并激活至少一列，一个或多个单元经受读或写处理。 还提供了一种组件和方法，其通过从存储列和常量参考列之间的两个不同行的两个单元或两行或两个存储列之间的差异检测来读取单元的状态。 还提供了一种组件，其中特定的选择结构专门用于读取操作，和/或其中连接在一起的两个互补列中的互补单元通过单个写入电流被编码在单个原子操作中。

    Magnetoresistive device
    6.
    发明授权
    Magnetoresistive device 有权
    磁阻器件

    公开(公告)号：US09093163B2

    公开(公告)日：2015-07-28

    申请号：US12687550

    申请日：2010-01-14

    申请人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    发明人： Joerg Wunderlich ,  Jan Zemen ,  Claude Chappert ,  Bryan Gallagher ,  Thibaut Devolder ,  David Williams

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675

    摘要： A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

    摘要翻译： 描述了操作磁阻器件的方法。 该器件包括铁磁区域，其被配置为表现出磁各向异性并允许其磁化在至少第一和第二取向之间切换，并且栅极电容耦合到铁磁区域。 该方法包括将电场脉冲施加到铁磁区域，以使磁各向异性的取向发生变化，以便在第一和第二取向之间切换磁化。

    LOGICAL MEMORY ARCHITECTURE, IN PARTICULAR FOR MRAM, PCRAM, OR RRAM
    7.
    发明申请
    LOGICAL MEMORY ARCHITECTURE, IN PARTICULAR FOR MRAM, PCRAM, OR RRAM 有权
    逻辑存储器架构，特别是MRAM，PCRAM或RRAM

    公开(公告)号：US20140016390A1

    公开(公告)日：2014-01-16

    申请号：US14007017

    申请日：2012-03-23

    申请人： Weisheng Zhao ,  Sumanta Chaudhuri ,  Claude Chappert ,  Jacques-Olivier Klein

    发明人： Weisheng Zhao ,  Sumanta Chaudhuri ,  Claude Chappert ,  Jacques-Olivier Klein

    IPC分类号： G11C5/06

    CPC分类号： G11C5/06 ,  G11C5/063 ,  G11C11/16 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0002 ,  G11C2213/77

    摘要： An architecture and method are provided for reading and writing, in parallel or in series, an electronic memory component based on a two-dimensional matrix of two-terminal binary memory unit cells built into a crossbar architecture. The component includes a logical column-selector located outside the matrix and activating at least one column, one or more cells of which are subjected to read or write processing. Also provided is a component and method with the reading of the status of the cells by differential detection on from two cells of two different rows, either between a storage column and a constant reference column, or between two rows or two storage columns. A component is also provided in which specific selection structure is exclusively dedicated to read operations, and/or in which complementary cells in two complementary columns connected together are encoded in a single atomic operation by means of a single write current.

    摘要翻译： 提供了一种架构和方法，用于并行或串行地读取和写入基于内置于交叉开关结构中的两端二进制存储器单元的二维矩阵的电子存储器组件。 该组件包括位于矩阵之外的逻辑列选择器，并激活至少一列，一个或多个单元经受读或写处理。 还提供了一种组件和方法，其通过从存储列和常量参考列之间的两个不同行的两个单元或两行或两个存储列之间的差异检测来读取单元的状态。 还提供了一种组件，其中特定的选择结构专门用于读取操作，和/或其中连接在一起的两个互补列中的互补单元通过单个写入电流被编码在单个原子操作中。

    Magnetic memory device
    8.
    发明授权
    Magnetic memory device 失效
    磁存储器件

    公开(公告)号：US07738286B2

    公开(公告)日：2010-06-15

    申请号：US11638379

    申请日：2006-12-14

    申请人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura ,  Thibault Devolder ,  Paul Crozat ,  Joo-von Kim ,  Claude Chappert

    发明人： Kenchi Ito ,  Hiromasa Takahashi ,  Takayuki Kawahara ,  Riichiro Takemura ,  Thibault Devolder ,  Paul Crozat ,  Joo-von Kim ,  Claude Chappert

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  Y10S977/935

    摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.

    摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。