公开(公告)号：US07407882B1

公开(公告)日：2008-08-05

申请号：US10928665

申请日：2004-08-27

申请人： Connie Pin-Chin Wang ,  Paul R. Besser ,  Wen Yu ,  Jinsong Yin ,  Keizaburo Yoshie

发明人： Connie Pin-Chin Wang ,  Paul R. Besser ,  Wen Yu ,  Jinsong Yin ,  Keizaburo Yoshie

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76856

摘要： A semiconductor component having a titanium silicide contact structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate. An opening having sidewalls is formed in the dielectric layer and exposes a portion of the semiconductor substrate. Titanium silicide is disposed on the dielectric layer, sidewalls, and the exposed portion of the semiconductor substrate. The titanium silicide may be formed by disposing titanium on the dielectric layer, sidewalls, and exposed portion of the semiconductor substrate and reacting the titanium with silane. Alternatively, the titanium silicide may be sputter deposited. A layer of titanium nitride is formed on the titanium silicide. A layer of tungsten is formed on the titanium nitride. The tungsten, titanium nitride, and titanium silicide are polished to form the contact structures.

摘要翻译： 具有硅化钛接触结构的半导体部件和半导体部件的制造方法。 在半导体衬底上形成介电材料层。 在电介质层中形成具有侧壁的开口，并露出半导体衬底的一部分。 钛硅化物设置在电介质层，侧壁和半导体衬底的暴露部分上。 钛硅化物可以通过在电介质层，侧壁和半导体衬底的暴露部分上设置钛并使钛与硅烷反应而形成。 或者，可以溅射沉积钛硅化物。 在硅化钛上形成氮化钛层。 在氮化钛上形成钨层。 将钨，氮化钛和硅化钛抛光以形成接触结构。

公开(公告)号：US08039391B1

公开(公告)日：2011-10-18

申请号：US11388976

申请日：2006-03-27

申请人： Jinsong Yin ,  Wen Yu ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

发明人： Jinsong Yin ,  Wen Yu ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

IPC分类号： H01L21/44

CPC分类号： H01L21/28518 ,  H01L21/321 ,  H01L21/76856

摘要： A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. Impurities are removed from the MOCVD-TiN barrier metal layer by a plasma treatment in a nitrogen-hydrogen plasma. The time period for plasma treating the titanium nitride layer is controlled so that penetration of nitrogen into the underlying titanium contact layer is substantially prevented, preserving the titanium contact layer for subsequently forming a titanium silicide at the bottom of the contact.

摘要翻译： 在半导体器件中形成接触的方法在接触孔中提供钛接触层和钛接触层上的MOCVD-TiN阻挡金属层。 在氮 - 氢等离子体中通过等离子体处理从MOCVD-TiN阻挡金属层除去杂质。 控制等离子体处理氮化钛层的时间段，以便基本上防止氮渗透到下面的钛接触层中，保留钛接触层以在接触的底部随后形成硅化钛。

公开(公告)号：US06927162B1

公开(公告)日：2005-08-09

申请号：US10782874

申请日：2004-02-23

申请人： Wen Yu ,  Jinsong Yin ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

发明人： Wen Yu ,  Jinsong Yin ,  Connie Pin-Chin Wang ,  Paul Besser ,  Keizaburo Yoshie

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76855 ,  H01L21/76856

摘要： A method of forming a contact in a semiconductor device deposits a refractory metal contact layer in a contact hole on a conductive region portion in a silicon substrate. The refractory metal contact layer is reacted with the silicide region prior to a plasma treatment of a contact barrier metal layer formed within the contact hole. This prevents portions of the refractory metal contact layer from being nitridated prior to conversion to silicide.

摘要翻译： 在半导体器件中形成接触的方法将难熔金属接触层沉积在硅衬底中的导电区域上的接触孔中。 在等离子体处理形成在接触孔内的接触阻挡金属层之前，难熔金属接触层与硅化物区域反应。 这样可以防止难熔金属接触层的部分在转化成硅化物之前被氮化。

公开(公告)号：US07880221B2

公开(公告)日：2011-02-01

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US20060060327A1

公开(公告)日：2006-03-23

申请号：US10948023

申请日：2004-09-23

申请人： Wen Yu ,  Ramchandra Patel ,  Manos Eliades ,  Jack Riddle

发明人： Wen Yu ,  Ramchandra Patel ,  Manos Eliades ,  Jack Riddle

IPC分类号： F28F11/00

CPC分类号： F28F9/0212 ,  F16H57/04 ,  F25B39/04 ,  F25B2339/0441 ,  F25B2500/01 ,  F25B2500/222 ,  F28D1/05375 ,  F28D2021/0084 ,  F28F2220/00

摘要： A heat exchanger for a vehicle is provided, where the heat exchanger includes core having first, and second sets of flow tubes extending between first and second headers and defining separate flow paths. One of the headers includes a first portion in fluid communication with the first set of flow tubes and a second portion defining a receiver/dryer chamber that is in fluid communication with the second set of flow tubes. A dryer is located within the receiver/dryer chamber.

公开(公告)号：US20080146028A1

公开(公告)日：2008-06-19

申请号：US11641647

申请日：2006-12-19

申请人： Wen Yu ,  Stephen B. Robie ,  Jeremias D. Romero

发明人： Wen Yu ,  Stephen B. Robie ,  Jeremias D. Romero

IPC分类号： H01L21/44

CPC分类号： H01L21/28556 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53228 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.

摘要翻译： 本发明的形成电子结构的方法包括提供钽基层并在钽层上沉积一层铜，该沉积是通过基底层温度在50℃以下的物理气相沉积进行的，其中 放电发生在300W或更小的功率水平。

公开(公告)号：US20050061489A1

公开(公告)日：2005-03-24

申请号：US10831378

申请日：2004-04-23

申请人： Wen Yu ,  Manos Eliades ,  Loren Lohmeyer ,  Jack Riddle

发明人： Wen Yu ,  Manos Eliades ,  Loren Lohmeyer ,  Jack Riddle

IPC分类号： F28F1/10 ,  F28D1/04 ,  F28D1/053 ,  F28F1/02 ,  F28F1/42 ,  F28F3/04 ,  F28F13/12 ,  F28F9/26

CPC分类号： F28F3/048 ,  F28D1/0443 ,  F28D2021/0084 ,  F28D2021/0089 ,  F28F1/022 ,  F28F1/42 ,  F28F1/422 ,  F28F3/044 ,  F28F13/12 ,  F28F2009/0287 ,  F28F2215/04 ,  Y10S165/916

摘要： A heat exchanger having an improved oil cooler section is provided. The oil cooler section includes a first manifold, a second manifold, an oil inlet port, an oil outlet port, cooling tubes, and a return tube. The first and second manifold are located in spaced relationship and the oil inlet and outlet port are located proximate each other toward one side of the heat exchanger. The cooling tubes are connected between the first and second manifold, each tube defining an oil flow passage. The return tube also be connected between the first and second manifold and defining an oil return passage. The oil return passage has a cross-sectional area larger than each of the oil flow passages allowing the oil to be returned along a low pressure flow path.

摘要翻译： 提供一种具有改进的油冷却器部分的热交换器。 油冷却器部分包括第一歧管，第二歧管，进油口，出油口，冷却管和回流管。 第一和第二歧管以间隔开的关系定位，并且油入口和出口端口彼此靠近热交换器的一侧。 冷却管连接在第一和第二歧管之间，每个管限定油流通道。 回流管还连接在第一和第二歧管之间并且限定出油回流通道。 回油通道的横截面积大于每个油流通道，允许油沿着低压流动路径返回。

公开(公告)号：US08669597B2

公开(公告)日：2014-03-11

申请号：US12116200

申请日：2008-05-06

申请人： Shenqing Fang ,  Connie Wang ,  Wen Yu ,  Fei Wang

发明人： Shenqing Fang ,  Connie Wang ,  Wen Yu ,  Fei Wang

IPC分类号： H01L29/66 ,  H01L21/4763

CPC分类号： H01L23/528 ,  H01L21/76807 ,  H01L21/76813 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11524 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit memory device, in one embodiment, includes a substrate having a plurality of bit lines. A first and second inter-level dielectric layer are successively disposed on the substrate. Each of a plurality of source lines and staggered bit line contacts extend through the first inter-level dielectric layer. Each of a plurality of source line vias and a plurality of staggered bit line vias extend through the second inter-level dielectric layer to each respective one of the plurality of source lines and the plurality of staggered bit line contacts. The source lines and staggered bit line contacts that extend through the first inter-level dielectric layer are formed together by a first set of fabrication processes. The source line vias and staggered bit line contacts that extend through the second inter-level dielectric layer are also formed together by a second set of fabrication processes.

摘要翻译： 在一个实施例中，集成电路存储器件包括具有多个位线的衬底。 第一和第二层间电介质层依次设置在基板上。 多个源极线和交错位线触点中的每一个延伸穿过第一层间电介质层。 多个源极线路通孔和多个交错位线通孔中的每一条通过第二级间介电层延伸到多条源极线路和多条交错位线触点中的每一个。 通过第一组制造工艺一起形成延伸穿过第一层间电介质层的源极线和交错位线触点。 延伸穿过第二层间电介质层的源极线通孔和交错位线触点也通过第二组制造工艺一起形成。

公开(公告)号：US20090140325A1

公开(公告)日：2009-06-04

申请号：US12340274

申请日：2008-12-19

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L29/792

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。

公开(公告)号：US07482217B1

公开(公告)日：2009-01-27

申请号：US11949637

申请日：2007-12-03

申请人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

发明人： Eunha Kim ,  Wen Yu ,  Minh-Van Ngo ,  Kyunghoon Min ,  Hiu-Yung Wong

IPC分类号： H01L21/8238

CPC分类号： H01L27/11534 ,  H01L21/26506 ,  H01L21/823425 ,  H01L21/823462 ,  H01L21/823468 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11568 ,  H01L29/66507 ,  H01L29/78

摘要： A method of forming an electronic device is provided that includes selectively implanting ions into a workpiece, wherein ions are implanted into a first region of the workpiece that includes a semiconductor material, while substantially none of the ions are implanted into a second region of the workpiece that also includes a semiconductor material. The method further includes depositing a metal-containing film over the first region and the second region after selectively implanting, and then reacting the metal-containing film with the semiconductor material to form a first metal-semiconductor film within the first region and a second metal-semiconductor film within the second region. The first metal-semiconductor film has a first thickness and the second metal-semiconductor film has a second thickness that is different from the first thickness.

摘要翻译： 提供一种形成电子器件的方法，其包括选择性地将离子注入到工件中，其中将离子注入到包括半导体材料的工件的第一区域中，而基本上没有离子注入工件的第二区域 其还包括半导体材料。 该方法还包括在选择性地注入之后，在第一区域和第二区域上沉积含金属膜，然后使含金属膜与半导体材料反应，以在第一区域内形成第一金属半导体膜，并且将第二金属 在第二区域内的半导体膜。 第一金属半导体膜具有第一厚度，第二金属半导体膜具有与第一厚度不同的第二厚度。