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38 条记录 (耗时 0.031 秒)

    Solid state thermal conversion of polycrystalline alumina to sapphire
    3.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    多晶氧化铝固体热转化为蓝宝石

    公开(公告)号：US5451553A

    公开(公告)日：1995-09-19

    申请号：US126954

    申请日：1993-09-24

    申请人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    发明人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    IPC分类号： C04B35/115 ,  C30B1/02 ,  C30B1/04 ,  C30B1/10 ,  C30B29/20

    CPC分类号： C30B1/02 ,  C30B29/20

    摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.

    摘要翻译： 已经通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度来实现将致密多晶陶瓷体大量转化成单晶体的固态工艺。 由于该工艺是固态工艺，因此陶瓷体的熔化不需要将其转化为单晶。 该方法已被用于通过将PCA加热到高于1100℃但低于2050℃的温度将含有小于100wppm的氧化镁的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），熔点 的氧化铝。

    Solderable largely base metal electrodes for metal oxide varistors
    4.
    发明授权
    Solderable largely base metal electrodes for metal oxide varistors 失效
    可焊接的金属氧化物压敏电阻的主要基底金属电极

    公开(公告)号：US4448806A

    公开(公告)日：1984-05-15

    申请号：US490611

    申请日：1983-05-02

    申请人： Lionel M. Levinson

    发明人： Lionel M. Levinson

    IPC分类号： H01C1/144 ,  H01C7/102 ,  B05D5/12 ,  H01C7/12

    CPC分类号： H01C1/144 ,  H01C7/102

    摘要： Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.

    摘要翻译： 用于金属氧化物变阻器的可焊接的大部分基底金属电极通过在非线性电阻材料衬底上丝网印刷导电的，可空气燃烧的贱金属组合物来制造。 分布的细贵金属阵列丝网印刷在屏蔽的母材和压敏电阻之间，其温度在约500℃至800℃之间的空气中加热。变阻器引线易于焊接到贵金属阵列上。

    Current suppressing circuit breaker unit for inductive motor protection
    5.
    发明授权
    Current suppressing circuit breaker unit for inductive motor protection 失效
    用于感应电机保护的电流抑制断路器单元

    公开(公告)号：US6144540A

    公开(公告)日：2000-11-07

    申请号：US265276

    申请日：1999-03-09

    申请人： David Arnold ,  Anil R. Duggal ,  Lionel M. Levinson

    发明人： David Arnold ,  Anil R. Duggal ,  Lionel M. Levinson

    IPC分类号： H01C7/02 ,  H01H71/12 ,  H02H3/02 ,  H02H9/02 ,  H02H3/00

    CPC分类号： H01C7/027 ,  H01H71/123 ,  H02H3/025 ,  H02H9/026

    摘要： A molded case circuit breaker and current suppressing unit protects an electric motor without tripping during motor current reversal. The circuit breaker trip unit provides long time, short time and instantaneous over current protection against abnormal overload and low-current short circuit currents within the protected circuit. The current suppressing unit rapidly suppresses high-current short circuit currents until the circuit breaker responds to isolate the protected equipment.

    摘要翻译： 塑壳断路器和电流抑制单元在马达电流反转期间保护电动机而不跳闸。 断路器跳闸单元提供长时间，短时间和瞬时过流保护，防止受保护电路内的异常过载和低电流短路电流。 电流抑制单元快速抑制大电流短路电流，直到断路器响应以隔离受保护的设备。

    Conversion of doped polycrystalline material to single crystal material
    7.
    发明授权
    Conversion of doped polycrystalline material to single crystal material 失效
    掺杂多晶材料转化为单晶材料

    公开(公告)号：US5588992A

    公开(公告)日：1996-12-31

    申请号：US552700

    申请日：1995-11-03

    申请人： Curtis E. Scott ,  Mary Sue Kaliszewski ,  Lionel M. Levinson

    发明人： Curtis E. Scott ,  Mary Sue Kaliszewski ,  Lionel M. Levinson

    IPC分类号： C30B1/02 ,  C30B1/00 ,  C30B29/20 ,  C30B1/06

    CPC分类号： C30B1/00 ,  C30B29/20

    摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

    摘要翻译： 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤：用转化增强掺杂剂掺杂多晶陶瓷材料，然后在所选择的温度下加热多晶体一段足以将多晶体转变的选定时间 到单晶。 所选择的温度小于多晶材料的熔化温度并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝（蓝宝石）时，转化增强掺杂剂的实例包括具有+3价的阳离子，例如铬，镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分，使得加热掺杂的多晶体导致第一部分的转化 到单晶结构，第二部分保留多晶结构。

    Varistor defect detection by incipient hot spot observation
    8.
    发明授权
    Varistor defect detection by incipient hot spot observation 失效
    压敏电阻缺陷检测通过初期热点观察

    公开(公告)号：US4733175A

    公开(公告)日：1988-03-22

    申请号：US813809

    申请日：1985-12-27

    申请人： Lionel M. Levinson

    发明人： Lionel M. Levinson

    IPC分类号： G01R31/02 ,  G01R31/308

    CPC分类号： G01R31/02 ,  G01R31/308

    摘要： Defects in varistors are detected by pulsing a high current through the varistors and shortly thereafter mapping the temperature distribution of a main varistor surface by heat sensitive equipment. The presence of a localized hot spot sufficiently higher in temperature than a reference temperature level in the varistor indicates the presence of a defect. The disclosed technique is especially adapted for detecting defects that manifest themselves as incipient hot spots but which quickly disappear from observation because their heat rapidly disperses into surrounding varistor material.

    摘要翻译： 通过脉冲通过压敏电阻的高电流来检测变阻器中的缺陷，此后不久通过热敏设备绘制主压敏电阻表面的温度分布。 在压敏电阻中存在足够高的温度比参考温度水平的局部热点指示存在缺陷。 所公开的技术特别适用于检测表现为初始热点但是由于其热快速分散到周围的变阻器材料中而迅速消失的观察的缺陷。

    Varistors with controllable voltage versus time response and method for using the same to provide a rectangular voltage pulse
    9.
    发明授权
    Varistors with controllable voltage versus time response and method for using the same to provide a rectangular voltage pulse 失效
    具有可控电压对时间响应的压敏电阻器及其使用方法提供矩形电压脉冲

    公开(公告)号：US4463268A

    公开(公告)日：1984-07-31

    申请号：US499609

    申请日：1983-05-31

    申请人： Lionel M. Levinson

    发明人： Lionel M. Levinson

    IPC分类号： H01C7/112 ,  H03K3/36

    CPC分类号： H01C7/112

    摘要： A bismuth-free, zinc oxide based varistor exhibits a controllable overshoot/undershoot voltage characteristic. The varistor is composed of zinc oxide as the primary constituent, with smaller quantities of barium, boron, one or more transition elements and aluminum. Varistor voltage versus time response is dependent on the degree of aluminum doping. Typically, more than approximately 0.003 mole percent, but less than approximately 0.1 mole percent aluminum is employed, depending on desired voltage overshoot/undershoot characteristic. Varistors having a controllable voltage versus time response are used in a method for providing a rectangular voltage pulse in response to a current input.

    摘要翻译： 无铋氧化锌基变阻器具有可控的过冲/下冲电压特性。 变阻器由氧化锌作为主要成分，较少量的钡，硼，一种或多种过渡元素和铝构成。 压敏电阻电压对时间响应取决于铝掺杂的程度。 通常，取决于所需的电压过冲/下冲特性，使用大于约0.003摩尔％但小于约0.1摩尔％的铝。 具有可控电压对时间响应的压敏电阻用于响应于电流输入提供矩形电压脉冲的方法。

    Low voltage varistor configuration
    10.
    发明授权
    Low voltage varistor configuration 失效
    低压变阻器配置

    公开(公告)号：US4364021A

    公开(公告)日：1982-12-14

    申请号：US840262

    申请日：1977-10-07

    申请人： Lionel M. Levinson

    发明人： Lionel M. Levinson

    IPC分类号： H01C7/102 ,  H03K17/30

    CPC分类号： H01C7/102

    摘要： Metal oxide varistor structures having a low breakdown voltage, low leakage current, high values of alpha, operational stability, and methods of making the same are disclosed. In accordance with one embodiment of the invention relating to metal oxide varistor structures, at least one of the planar surfaces of a varistor disk, for example, is provided with a recessed region for increasing the electric field intensity in the region of the recess and hence reducing the breakdown voltage of the varistor disk without altering the structural integrity of the disk. Methods for making varistor structures with one or more recesses on one or more surfaces of the varistor structures are also disclosed.

    摘要翻译： 公开了具有低击穿电压，低漏电流，高α值，操作稳定性及其制造方法的金属氧化物变阻器结构。 根据涉及金属氧化物变阻器结构的本发明的一个实施例，例如，变阻器盘的至少一个平面表面设置有用于增加凹部区域中的电场强度的凹陷区域，因此 降低压敏电阻盘的击穿电压，而不改变盘的结构完整性。 还公开了在压敏电阻结构的一个或多个表面上制造具有一个或多个凹槽的压敏电阻结构的方法。