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    Nitride semiconductor substrate and method of manufacturing the same
    1.
    发明授权
    Nitride semiconductor substrate and method of manufacturing the same 有权

    公开(公告)号：US11605716B2

    公开(公告)日：2023-03-14

    申请号：US17095195

    申请日：2020-11-11

    申请人： CoorsTek KK

    发明人： Hiroshi Oishi ,  Jun Komiyama ,  Yoshihisa Abe ,  Kenichi Eriguchi

    IPC分类号： H01L29/207 ,  H01L29/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/778 ,  H01L29/267

    摘要： The present invention provides a nitride semiconductor substrate suitable for a high frequency device. The nitride semiconductor substrate has a substrate, a buffer layer made of group 13 nitride semiconductors, and an active layer made of group 13 nitride semiconductors in this order, wherein the substrate is composed of a first substrate made of polycrystalline aluminum nitride, and a second substrate made of Si single crystal having a specific resistance of 100 Ω·cm or more, formed on the first substrate, the average particle size of AlN constituting the first substrate is 3 to 9 μm, and preferably, the second substrate grown by the MCZ method has an oxygen concentration of 1E+18 to 9E+18 atoms/cm3 and a specific resistance of 100 to 1000 Ω·cm.

    Nitride semiconductor substrate
    2.
    发明授权
    Nitride semiconductor substrate 有权

    公开(公告)号：US10825895B2

    公开(公告)日：2020-11-03

    申请号：US16597096

    申请日：2019-10-09

    申请人： CoorsTek KK

    发明人： Yoshihisa Abe ,  Kenichi Eriguchi ,  Jun Komiyama

    IPC分类号： H01L29/06 ,  H01L29/36 ,  H01L29/20 ,  H01L29/207 ,  H01L29/66 ,  H01L29/778 ,  H01L29/201 ,  H01L29/205

    摘要： A nitride semiconductor substrate can effectively reduce leakage current in the vertical direction. The nitride semiconductor substrate comprises a buffer layer and an operation layer, both of which are made of nitride semiconductor, deposited on a silicon single crystal substrate, wherein the buffer layer comprises a single-layered first initial layer in contact with the silicon single crystal layer, and a single-layered second initial layer in contact with the first initial layer, the first initial layer is made of AlN, the second initial layer is made of AlzGa1-zN (0.12≤z≤0.65), and in an X-Y graph where the X-axis denotes z×100 and the Y-axis denotes carbon concentration in the second initial layer, X ranges from 12 to 65 and Y is within a range between Y=1E+17×exp(−0.05×X) and Y=1E+21×exp(−0.05×X).

    NITRIDE SEMICONDUCTOR SUBSTRATE
    4.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE 有权
    氮化物半导体基板

    公开(公告)号：US20160293710A1

    公开(公告)日：2016-10-06

    申请号：US15084119

    申请日：2016-03-29

    申请人： CoorsTek KK

    发明人： Noriko Omori ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Jun Komiyama ,  Kenichi Eriguchi

    IPC分类号： H01L29/20 ,  H01L29/04

    CPC分类号： H01L29/2003 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/32 ,  H01L29/7786

    摘要： A solution is formation of a nitride semiconductor layer on one principal plane of a single crystal substrate through a first layer. Upon selecting arbitrary three places in a radial direction from a cross section cleaved in a diameter portion and observing an interface between the first layer and the nitride semiconductor layer by taking a width of at least 500 nm in the radial direction, a value is within the range of 6 nm or more and 15 nm or less in a mean value of the three places with regard to a difference between a maximum height of a convex top portion and a minimum height of a concave bottom portion of the first layer in a thickness direction from the single crystal substrate toward the nitride semiconductor layer. A value is 10 nm or more and 25 nm or less in the mean value.

    摘要翻译： 解决方案是通过第一层在单晶衬底的一个主平面上形成氮化物半导体层。 在从直径部分切断的截面中径向选择任意三个位置时，通过沿径向取宽度为500nm以上观察第一层与氮化物半导体层之间的界面，值在 相对于第一层的厚度方向上的凸起顶部的最大高度和凹部底部的最小高度之间的差，三个平均值的平均值为6nm以上且15nm以下的范围 从单晶基板朝向氮化物半导体层。 平均值的值为10nm以上且25nm以下。

    Nitride semiconductor substrate
    5.
    发明授权
    Nitride semiconductor substrate 有权

    公开(公告)号：US11201217B2

    公开(公告)日：2021-12-14

    申请号：US16927393

    申请日：2020-07-13

    申请人： CoorsTek KK

    发明人： Kenichi Eriguchi ,  Yoshihisa Abe ,  Jun Komiyama

    IPC分类号： H01L29/207 ,  H01L29/06 ,  H01L29/20 ,  H01L29/778 ,  H01L21/02

    摘要： The characteristic of Fe-doped HEMTs is improved. The invention provides a nitride semiconductor substrate having a substrate, a buffer layer made of nitride semiconductors on the substrate, and an active layer composed of nitride semiconductor layers on the buffer layer; the buffer layer containing Fe, the Fe having a concentration profile in which the Fe concentration increases monotonically and gradually in the thickness direction of the buffer layer from an interface between the substrate and the buffer layer, has a maximum value within 2×1017 to 1.1×1020 atoms/cm3 inclusive, and decreases monotonically and gradually toward an interface between the buffer layer and the active layer, and the point of the maximum value being within ±50 nm from the midpoint in the thickness direction of the buffer layer, and being 500 nm or more away from the interface between the buffer layer and the active layer.

    NITRIDE SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    NITRIDE SEMICONDUCTOR SUBSTRATE 有权
    氮化物半导体基板

    公开(公告)号：US20170011919A1

    公开(公告)日：2017-01-12

    申请号：US15202736

    申请日：2016-07-06

    申请人： CoorsTek KK

    发明人： Noriko Omori ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Jun Komiyama ,  Kenichi Eriguchi ,  Tomoko Watanabe

    IPC分类号： H01L21/02 ,  H01L29/20

    CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/0661 ,  H01L29/34 ,  H01L29/7786

    摘要： The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×108 pieces/cm2 or more and 1×1011 pieces/cm2 or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.

    摘要翻译： 本发明提供一种氮化物半导体衬底，其具有顺序堆叠在基底衬底的一个主平面上的初始氮化物和氮化物半导体，其中氮化物半导体衬底包括从基底衬底和初始氮化物之间的界面朝向基底衬底 沿着一个任意的横截面; 凹部各自具有6nm以上且60nm以下的直径，以3×10 8个/ cm 2以上1×10 11个/ cm 2以下的密度形成。 并且所述凹部优选地具有从所述基底基板和所述初始氮化物之间的界面朝向所述基底基板的3nm以上且45nm以下的深度。

    Nitride semiconductor substrate
    8.
    发明授权
    Nitride semiconductor substrate 有权
    氮化物半导体衬底

    公开(公告)号：US09530846B2

    公开(公告)日：2016-12-27

    申请号：US15084119

    申请日：2016-03-29

    申请人： CoorsTek KK

    发明人： Noriko Omori ,  Hiroshi Oishi ,  Yoshihisa Abe ,  Jun Komiyama ,  Kenichi Eriguchi

    IPC分类号： H01L29/20 ,  H01L29/32 ,  H01L29/04

    CPC分类号： H01L29/2003 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/32 ,  H01L29/7786

    摘要： A solution is formation of a nitride semiconductor layer on one principal plane of a single crystal substrate through a first layer. Upon selecting arbitrary three places in a radial direction from a cross section cleaved in a diameter portion and observing an interface between the first layer and the nitride semiconductor layer by taking a width of at least 500 nm in the radial direction, a value is within the range of 6 nm or more and 15 nm or less in a mean value of the three places with regard to a difference between a maximum height of a convex top portion and a minimum height of a concave bottom portion of the first layer in a thickness direction from the single crystal substrate toward the nitride semiconductor layer. A value is 10 nm or more and 25 nm or less in the mean value.

    摘要翻译： 解决方案是通过第一层在单晶衬底的一个主平面上形成氮化物半导体层。 在从直径部分切断的截面中径向选择任意三个位置时，通过沿径向取宽度为500nm以上观察第一层与氮化物半导体层之间的界面，值在 相对于第一层的厚度方向上的凸起顶部的最大高度和凹部底部的最小高度之间的差，三个平均值的平均值为6nm以上且15nm以下的范围 从单晶基板朝向氮化物半导体层。 平均值的值为10nm以上且25nm以下。