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公开(公告)号：US5427051A
公开(公告)日：1995-06-27
申请号：US64386
申请日：1993-05-21
申请人： Randolph E. Maxwell , Curtis E. Scott , Mary S. Kaliszewski , Marshall G. Jones , Lionel M. Levinson , Carl E. Erikson
发明人： Randolph E. Maxwell , Curtis E. Scott , Mary S. Kaliszewski , Marshall G. Jones , Lionel M. Levinson , Carl E. Erikson
摘要： Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.
摘要翻译： 多晶氧化铝体已经通过固态转化过程转化为蓝宝石，其中局部能量源仅用于将身体的一部分加热至高于1800℃的温度。使用激光作为能量源导致转化为蓝宝石 在不到一个小时内。 多晶氧化铝体的氧化镁含量低于50wppm，平均粒度小于100微米，密度大于3.97g / cc。
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公开(公告)号：US5451553A
公开(公告)日：1995-09-19
申请号：US126954
申请日：1993-09-24
IPC分类号： C04B35/115 , C30B1/02 , C30B1/04 , C30B1/10 , C30B29/20
摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.
摘要翻译： 已经通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度来实现将致密多晶陶瓷体大量转化成单晶体的固态工艺。 由于该工艺是固态工艺，因此陶瓷体的熔化不需要将其转化为单晶。 该方法已被用于通过将PCA加热到高于1100℃但低于2050℃的温度将含有小于100wppm的氧化镁的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），熔点 的氧化铝。
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公开(公告)号：US5588992A
公开(公告)日：1996-12-31
申请号：US552700
申请日：1995-11-03
摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
摘要翻译： 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤：用转化增强掺杂剂掺杂多晶陶瓷材料，然后在所选择的温度下加热多晶体一段足以将多晶体转变的选定时间 到单晶。 所选择的温度小于多晶材料的熔化温度并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝（蓝宝石）时，转化增强掺杂剂的实例包括具有+3价的阳离子，例如铬，镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分，使得加热掺杂的多晶体导致第一部分的转化 到单晶结构，第二部分保留多晶结构。
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公开(公告)号：US5487353A
公开(公告)日：1996-01-30
申请号：US195187
申请日：1994-02-14
摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
摘要翻译： 将多晶陶瓷体转换为单晶体的固态方法包括以下步骤：用转化增强掺杂剂掺杂多晶陶瓷材料，然后在所选择的温度下加热多晶体一段足以将多晶体转变的选定时间 到单晶。 所选择的温度小于多晶材料的熔化温度并且大于材料的熔融温度的约一半。 在将多晶氧化铝转化为单晶氧化铝（蓝宝石）时，转化增强掺杂剂的实例包括具有+3价的阳离子，例如铬，镓和钛。 多晶体还可以不均匀地掺杂以形成掺杂到转化增强掺杂剂的选定水平的多晶体的第一部分和不掺杂的第二部分，使得加热掺杂的多晶体导致第一部分的转化 到单晶结构，第二部分保留多晶结构。
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5.发明授权Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal 失效使用晶种将多晶氧化铝固体热转化为蓝宝石
公开(公告)号：US5549746A
公开(公告)日：1996-08-27
申请号：US126628
申请日：1993-09-24
摘要： A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700.degree. C. without melting the body.
摘要翻译： 用于将多晶陶瓷体大量转化成具有与晶种相同的晶体取向的单晶体（相同的化学组成）的固态晶种方法。 该方法包括加热所述主体以在主体和晶种之间形成整体连接，加热接合的结构以减少晶粒生长抑制剂并进一步加热接合结构高于结晶材料微晶生长所需的最低温度，但不热 足以熔化和扭曲多晶陶瓷体在其转变成单晶时的原始形状。 已经使用该方法将多晶氧化铝（PCA）体转变为具有与晶种相同的晶体取向的蓝宝石，通过加热在1700℃以上的温度下单体连接到蓝宝石晶种的PCA体，而不熔化本体 。
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6.发明授权Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography 失效使用具有选定表面形貌的主体将多晶材料转化为单晶材料
公开(公告)号：US5540182A
公开(公告)日：1996-07-30
申请号：US126830
申请日：1993-09-24
摘要： A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.
摘要翻译： 用于将多晶体聚合到单晶体的固体步骤包括以下步骤：在体上形成所选择的表面形貌，然后在低于其熔融温度的温度下加热体，所述时间足以将多晶材料基本上转化为单 水晶材料。 表面形貌包括来自具有多晶材料侧壁的主体的凹陷或突起，所述侧壁设置成在形成相对尖锐的拐角处的接合处彼此相交，并且侧壁的尺寸大于多晶材料的平均晶粒尺寸。 通常，氧化铝是多晶材料，表面特征包括凹槽等。 将具有所选表面形貌的图案化氧化铝体在一个或多个循环中加热至1800℃至2000℃的温度以将多晶氧化铝转化为蓝宝石。
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7.发明授权
公开(公告)号：US4448806A
公开(公告)日：1984-05-15
申请号：US490611
申请日：1983-05-02
申请人： Lionel M. Levinson
发明人： Lionel M. Levinson
摘要： Solderable, largely base metal electrodes for metal oxide varistors are fabricated by screen printing an electrically conductive, air-fireable base metal composition on a varistor material substrate. A distributed fine noble metal array is screen printed over the screened base metal and the varistor heated in air at a temperature of between approximately 500.degree. C. and 800.degree. C. The varistor leads are easily solderable to the noble metal array.
摘要翻译： 用于金属氧化物变阻器的可焊接的大部分基底金属电极通过在非线性电阻材料衬底上丝网印刷导电的，可空气燃烧的贱金属组合物来制造。 分布的细贵金属阵列丝网印刷在屏蔽的母材和压敏电阻之间，其温度在约500℃至800℃之间的空气中加热。变阻器引线易于焊接到贵金属阵列上。
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8.发明授权
公开(公告)号：US6144540A
公开(公告)日：2000-11-07
申请号：US265276
申请日：1999-03-09
申请人： David Arnold , Anil R. Duggal , Lionel M. Levinson
发明人： David Arnold , Anil R. Duggal , Lionel M. Levinson
CPC分类号： H01C7/027 , H01H71/123 , H02H3/025 , H02H9/026
摘要： A molded case circuit breaker and current suppressing unit protects an electric motor without tripping during motor current reversal. The circuit breaker trip unit provides long time, short time and instantaneous over current protection against abnormal overload and low-current short circuit currents within the protected circuit. The current suppressing unit rapidly suppresses high-current short circuit currents until the circuit breaker responds to isolate the protected equipment.
摘要翻译： 塑壳断路器和电流抑制单元在马达电流反转期间保护电动机而不跳闸。 断路器跳闸单元提供长时间，短时间和瞬时过流保护，防止受保护电路内的异常过载和低电流短路电流。 电流抑制单元快速抑制大电流短路电流，直到断路器响应以隔离受保护的设备。
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公开(公告)号：US5877467A
公开(公告)日：1999-03-02
申请号：US797152
申请日：1997-02-10
申请人： David Arnold , Anil R. Duggal , Lionel M. Levinson
发明人： David Arnold , Anil R. Duggal , Lionel M. Levinson
CPC分类号： H01H9/465 , H01C7/027 , H01C7/12 , H02H9/026 , H01H2033/163
摘要： A circuit breaker is equipped with a current limiting arc runner for effective overcurrent interruption without additional heating under quiescent operating conditions. Upon contact separation, an arc is drawn with the endpoints of the arc being initially rooted on the set of open contacts. Further opening of the contacts commutates the arc onto the current limiting arc runner to suppress the circuit current.
摘要翻译： 断路器配备有限流电弧转子，用于在静态工作条件下无需额外加热的有效过流中断。 在接触分离时，绘制弧，其中弧的端点最初根植于一组开放的触点上。 触点的进一步打开将电弧换向限流电弧转子以抑制回路电流。
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公开(公告)号：US4901136A
公开(公告)日：1990-02-13
申请号：US285363
申请日：1988-12-15
申请人： Constantine A. Neugebauer , Lionel M. Levinson , Homer H. Glascock, II , Charles W. Eichelberger , Robert J. Wojnarowski , Richard O. Carlson
发明人： Constantine A. Neugebauer , Lionel M. Levinson , Homer H. Glascock, II , Charles W. Eichelberger , Robert J. Wojnarowski , Richard O. Carlson
IPC分类号： H01L23/04 , H01L23/495 , H01L23/538 , H01L25/065
CPC分类号： H01L23/5383 , H01L23/04 , H01L23/49541 , H01L23/5389 , H01L25/0655 , H01L2924/0002 , H01L2924/01079
摘要： A package for interconnecting a plurality of integrated circuit chips into a functional unit comprising a multilayer substrate having ground and power conducting layers and a frame for holding the chips with their terminal pads on the side of the frame opposite the substrate. Power and ground terminal pads on the chips are coupled to the appropriate potentials via registering conductive feedthroughs passing through the frame and into the substrate into contact with appropriate power or conductive layers in the substrate. Signal pads on the chips are interconnected by means of a conductive layer which is located over the chips on the side of the frame opposite the substrate.
摘要翻译： 一种用于将多个集成电路芯片互连到功能单元的封装，该功能单元包括具有接地和功率传导层的多层基板和用于将其端子焊盘保持在与基板相对的一侧的端子焊盘的框架。 芯片上的电源和接地端子焊盘通过记录穿过框架并进入衬底的导电馈通件与基板中适当的电源或导电层接触而耦合到适当的电位。 芯片上的信号焊盘通过位于与衬底相对的框架侧上的芯片上方的导电层相互连接。
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