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11 条记录 (耗时 0.03 秒)

    Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results
    4.
    发明授权
    Method and system for metrology recipe generation and review and analysis of design, simulation and metrology results 有权
    计量配方生成方法和系统，设计，模拟和计量结果的审查和分析

    公开(公告)号：US07207017B1

    公开(公告)日：2007-04-17

    申请号：US10865047

    申请日：2004-06-10

    申请人： Cyrus Tabery ,  Chris Haidinyak ,  Todd P. Lukanc ,  Luigi Capodieci ,  Carl P. Babcock ,  Hung-eil Kim ,  Christopher A. Spence

    发明人： Cyrus Tabery ,  Chris Haidinyak ,  Todd P. Lukanc ,  Luigi Capodieci ,  Carl P. Babcock ,  Hung-eil Kim ,  Christopher A. Spence

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5081

    摘要： A method of generating a metrology recipe includes identifying regions of interest within a device layout. A coordinate list, which corresponds to the identified regions of interest, can be provided and used to create a clipped layout, which can be represented by a clipped layout data file. The clipped layout data file and corresponding coordinate list can be provided and converted into a metrology recipe for guiding one or more metrology instruments in testing a processed wafer and/or reticle. The experimental metrology results received in response to the metrology request can be linked to corresponding design data and simulation data and stored in a queriable database system.

    摘要翻译： 生成计量配方的方法包括识别设备布局内的感兴趣区域。 可以提供对应于所识别的感兴趣区域的坐标列表并用于创建剪切布局，其可以由剪切布局数据文件表示。 裁剪的布局数据文件和相应的坐标列表可以被提供并转换成用于在测试处理的晶片和/或掩模版时引导一个或多个计量仪器的计量配方。 根据测量要求收到的实验测量结果可以与相应的设计数据和仿真数据相关联，并存储在可数据库系统中。

    System and method for fabricating contact holes
    7.
    发明授权
    System and method for fabricating contact holes 有权
    制造接触孔的系统和方法

    公开(公告)号：US07384725B2

    公开(公告)日：2008-06-10

    申请号：US10817193

    申请日：2004-04-02

    申请人： Anna M. Minvielle ,  Cyrus E. Tabery ,  Hung-eil Kim ,  Jongwook Kye

    发明人： Anna M. Minvielle ,  Cyrus E. Tabery ,  Hung-eil Kim ,  Jongwook Kye

    IPC分类号： G03F7/20 ,  G03F1/00

    CPC分类号： G03F7/70425 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70158

    摘要： A method of forming a plurality of contact holes of varying pitch and density in a contact layer of an integrated circuit device is provided. The plurality of contact holes can include a plurality of regularly spaced contact holes having a first pitch along a first direction and a plurality of semi-isolated contact holes having a second pitch along a second direction. A double-dipole illumination source can transmit light energy through a mask having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source can include a first dipole aperture, which is oriented and optimized for patterning the regularly spaced contact holes, and a second dipole aperture, which is oriented substantially orthogonal to the first dipole aperture and optimized for patterning the plurality of semi-isolated contact holes. The contact layer can be etched using the patterned photoresist layer.

    摘要翻译： 提供了一种在集成电路器件的接触层中形成多个具有不同间距和密度的接触孔的方法。 多个接触孔可以包括沿着第一方向具有第一间距的多个规则间隔的接触孔和沿第二方向具有第二间距的多个半隔离接触孔。 双偶极照明源可以通过具有对应于期望的接触孔图案的图案的掩模传输光能。 双偶极照明源可以包括第一偶极孔，其被定向和优化以用于图案化规则间隔的接触孔，以及第二偶极孔，其基本上垂直于第一偶极孔定向并且被优化用于图案化多个半 隔离接触孔。 可以使用图案化的光致抗蚀剂层来蚀刻接触层。

    Mask CD measurement monitor outside of the pellicle area
    8.
    发明授权
    Mask CD measurement monitor outside of the pellicle area 有权
    面罩CD测量显示器外面的防护薄膜区域

    公开(公告)号：US07422828B1

    公开(公告)日：2008-09-09

    申请号：US10774099

    申请日：2004-02-06

    申请人： Hung-eil Kim

    发明人： Hung-eil Kim

    IPC分类号： G03F1/14 ,  G06K9/00 ,  G01N21/956

    CPC分类号： G03F1/64 ,  G03F1/44 ,  G03F1/84 ,  H01L22/12

    摘要： A method of fabricating a photomask having a pellicle on a photomask substrate that facilitates accurate measurement of a critical dimension on the photomask, without requiring removal of the pellicle from the photomask substrate. A first pattern is transferred onto the photomask substrate in a first area, and at least one test pattern is transferred onto the photomask substrate outside of the first area. The pellicle is attached to the photomask substrate, wherein the pellicle covers the first area, but does not cover the at least one test pattern.

    摘要翻译： 一种在光掩模基板上制造具有防护薄膜的光掩模的方法，其有助于精确测量光掩模上的临界尺寸，而不需要从光掩模基板去除防护薄膜。 将第一图案转移到第一区域中的光掩模基板上，并且至少一个测试图案被转印到第一区域外的光掩模基板上。 防护薄膜组件附接到光掩模基底，其中防护薄膜组件覆盖第一区域，但不覆盖至少一个测试图案。

    Patterning for elongated VSS contact flash memory
    9.
    发明授权
    Patterning for elongated VSS contact flash memory 有权
    扩展VSS接触闪存的图案化

    公开(公告)号：US07018922B1

    公开(公告)日：2006-03-28

    申请号：US10968713

    申请日：2004-10-19

    申请人： Hung-eil Kim ,  Anna Minvielle ,  Christopher F. Lyons ,  Marina V. Plat ,  Ramkumar Subramanian

    发明人： Hung-eil Kim ,  Anna Minvielle ,  Christopher F. Lyons ,  Marina V. Plat ,  Ramkumar Subramanian

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/11521 ,  H01L21/76802 ,  H01L27/115

    摘要： A method of forming a contact in a flash memory device is disclosed. The method increases the depth of focus margin and the overlay margin between the contact and the stacked gate layers. A plurality of stacked gate layers are formed on a semiconductor substrate, wherein each stacked gate layer extends in a predefined direction and is substantially parallel to other stacked gate layers. An interlayer insulating layer is deposited over the plurality of stacked gate layers, and a contact hole is patterned between a first stacked gate layer of the plurality of stacked gate layers and a second stacked gate layer of the plurality of stacked gate layers. The contact hole is formed in an elongated shape, wherein a major axis of the contact hole is substantially parallel to the stacked gate layers. A conductive layer is deposited in the contact hole and excess conductive material is removed.

    摘要翻译： 公开了一种在闪速存储器件中形成触点的方法。 该方法增加了接触和层叠栅极层之间的焦距裕度和覆盖边缘的深度。 在半导体衬底上形成多个层叠的栅极层，其中每个堆叠的栅极层沿预定的方向延伸并且基本上平行于其它堆叠的栅极层。 层叠绝缘层沉积在多个堆叠的栅极层上，并且在多个堆叠的栅极层的第一堆叠的栅极层和多个堆叠的栅极层的第二叠层栅极层之间形成接触孔。 接触孔形成为细长形状，其中接触孔的长轴基本上平行于堆叠的栅极层。 导电层沉积在接触孔中，去除过量的导电材料。

    System and method for fabricating contact holes
    10.
    发明申请
    System and method for fabricating contact holes 有权
    制造接触孔的系统和方法

    公开(公告)号：US20050221233A1

    公开(公告)日：2005-10-06

    申请号：US10817193

    申请日：2004-04-02

    申请人： Anna Minvielle ,  Cyrus Tabery ,  Hung-eil Kim ,  Jongwook Kye

    发明人： Anna Minvielle ,  Cyrus Tabery ,  Hung-eil Kim ,  Jongwook Kye

    IPC分类号： G03F7/20 ,  G03F7/00

    CPC分类号： G03F7/70425 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70158

    摘要： A method of forming a plurality of contact holes of varying pitch and density in a contact layer of an integrated circuit device is provided. The plurality of contact holes can include a plurality of regularly spaced contact holes having a first pitch along a first direction and a plurality of semi-isolated contact holes having a second pitch along a second direction. A double-dipole illumination source can transmit light energy through a mask having a pattern corresponding to a desired contact hole pattern. The double-dipole illumination source can include a first dipole aperture, which is oriented and optimized for patterning the regularly spaced contact holes, and a second dipole aperture, which is oriented substantially orthogonal to the first dipole aperture and optimized for patterning the plurality of semi-isolated contact holes. The contact layer can be etched using the patterned photoresist layer.

    摘要翻译： 提供了一种在集成电路器件的接触层中形成多个具有不同间距和密度的接触孔的方法。 多个接触孔可以包括沿着第一方向具有第一间距的多个规则间隔的接触孔和沿第二方向具有第二间距的多个半隔离接触孔。 双偶极照明源可以通过具有对应于期望的接触孔图案的图案的掩模传输光能。 双偶极照明源可以包括第一偶极孔，其被定向和优化以用于图案化规则间隔的接触孔，以及第二偶极孔，其基本上垂直于第一偶极孔定向并且被优化用于图案化多个半 隔离接触孔。 可以使用图案化的光致抗蚀剂层来蚀刻接触层。