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    Method for Forming Fine Patterns of Semiconductor Device Using Directed Self-Assembly Process
    3.
    发明申请
    Method for Forming Fine Patterns of Semiconductor Device Using Directed Self-Assembly Process 审中-公开
    使用定向自组装工艺形成半导体器件精细图案的方法

    公开(公告)号：US20140287587A1

    公开(公告)日：2014-09-25

    申请号：US14346080

    申请日：2012-09-27

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Jung-Youl Lee ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： H01L21/308

    CPC分类号： H01L21/3086 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0271 ,  H01L21/0337

    摘要： Provided herein is a method for forming fine patterns of semiconductor devices capable of forming patterns with 20 nm-level line width without bulk-exposure and hardening of guide patterns. Method steps include (a) forming a photoresist layer over a wafer on which an organic anti-reflection coating layer is formed; (b) exposing and developing the photoresist layer to form guide patterns; (c) forming a neutral layer over the wafer; (d) developing the guide patterns to remove them and form neutral layer patterns having an opening part; (e) coating block copolymer of directed self assembly material on the substrate and heating the substrate over a glass transition temperature (Tg) to form directed self-assembly patterns; and (f) selectively etching a part having relatively small etching resistivity (or high etching rate) among the directed self-assembly patterns by using O2 plasma to form fine patterns.

    摘要翻译： 本文提供了一种用于形成能够形成具有20nm级线宽的图案的半导体器件的精细图案的方法，而不引导图案的体积曝光和硬化。 方法步骤包括（a）在其上形成有机抗反射涂层的晶片上形成光致抗蚀剂层; （b）曝光和显影光致抗蚀剂层以形成引导图案; （c）在所述晶片上形成中性层; （d）显影引导图案以去除它们并形成具有开口部分的中性层图案; （e）将定向自组装材料的嵌段共聚物涂覆在基材上并在玻璃化转变温度（Tg）下加热基材以形成定向的自组装图案; 和（f）通过使用O 2等离子体来选择性地蚀刻定向自组装图案中具有相对小的蚀刻电阻率（或高蚀刻速率）的部分以形成精细图案。

    Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same
    4.
    发明授权
    Phenol monomer, polymer for forming a resist underlayer film including same, and composition for a resist underlayer film including same 有权
    苯酚单体，用于形成其包含其的抗蚀剂下层膜的聚合物，以及包含其的抗蚀剂下层膜的组合物

    公开(公告)号：US09170495B2

    公开(公告)日：2015-10-27

    申请号：US14354978

    申请日：2012-11-01

    申请人： DONGJIN SEMICHEM CO., LTD.

    发明人： Jeong-Sik Kim ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03F7/11 ,  G03F7/09 ,  C08G61/12 ,  C07D311/86 ,  C07D495/10 ,  C07D491/107 ,  C08G8/20 ,  C09D161/12

    CPC分类号： G03F7/094 ,  C07D311/86 ,  C07D491/107 ,  C07D495/10 ,  C08G8/20 ,  C08G61/122 ,  C08G2261/344 ,  C09D161/12 ,  G03F7/091 ,  G03F7/11

    摘要： A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (—CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (—NH—), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.

    摘要翻译： 公开了用于半导体制造的光刻工艺中使用的酚单体，用于制备含有它的抗蚀剂底层的聚合物和包含该酚醛单体的抗蚀剂底层组合物。 酚类单体由式1的式1表示，式1中，R 1，R 2，R 3和R 4独立地为氢原子或直链，支链，单环或多环饱和或不饱和烃基，其具有1〜 具有或不具有杂原子的20个碳原子; A是具有4-20个碳原子的单环或多环芳族烃基; X是氧原子（O）或硫原子（S）; Y为单键，亚甲基（-CH 2 - ），氧原子（O），硫原子（S），氨基（-NH-）或两个分离的氢原子，其中A， R 2，R 3和R 4可以被具有或不具有杂原子的具有1至20个碳原子的直链，支链，单环或多环饱和或不饱和烃基取代; 并且R 1和R 2或R 3和R 4彼此独立地连接形成环。

    PHENOL MONOMER, POLYMER FOR FORMING A RESIST UNDERLAYER FILM INCLUDING SAME, AND COMPOSITION FOR A RESIST UNDERLAYER FILM INCLUDING SAME
    5.
    发明申请
    PHENOL MONOMER, POLYMER FOR FORMING A RESIST UNDERLAYER FILM INCLUDING SAME, AND COMPOSITION FOR A RESIST UNDERLAYER FILM INCLUDING SAME 有权
    酚醛单体，聚合物，用于形成包含它们的底漆膜，以及用于耐下漆膜的组合物，包括它们

    公开(公告)号：US20140319097A1

    公开(公告)日：2014-10-30

    申请号：US14354978

    申请日：2012-11-01

    申请人： DONGJIN SEMICHEM CO., LTD

    发明人： Jeong-Sik Kim ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03F7/09

    CPC分类号： G03F7/094 ,  C07D311/86 ,  C07D491/107 ,  C07D495/10 ,  C08G8/20 ,  C08G61/122 ,  C08G2261/344 ,  C09D161/12 ,  G03F7/091 ,  G03F7/11

    摘要： A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (—CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (—NH—), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.

    摘要翻译： 公开了用于半导体制造的光刻工艺中使用的酚单体，用于制备含有它的抗蚀剂底层的聚合物和包含该酚醛单体的抗蚀剂底层组合物。 酚类单体由式1的式1表示，式1中，R 1，R 2，R 3和R 4独立地为氢原子或直链，支链，单环或多环饱和或不饱和烃基，其具有1〜 具有或不具有杂原子的20个碳原子; A是具有4-20个碳原子的单环或多环芳族烃基; X是氧原子（O）或硫原子（S）; Y为单键，亚甲基（-CH 2 - ），氧原子（O），硫原子（S），氨基（-NH-）或两个分离的氢原子，其中A， R 2，R 3和R 4可以被具有或不具有杂原子的具有1至20个碳原子的直链，支链，单环或多环饱和或不饱和烃基取代; 并且R 1和R 2或R 3和R 4彼此独立地连接形成环。

    I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME
    6.
    发明申请
    I-LINE PHOTORESIST COMPOSITION AND METHOD FOR FORMING FINE PATTERN USING SAME 审中-公开
    I-LINE光电组合物和使用其形成精细图案的方法

    公开(公告)号：US20140242520A1

    公开(公告)日：2014-08-28

    申请号：US14346356

    申请日：2012-09-21

    申请人： DONGJIN SEMICHEM CO., LTD.

    发明人： Jung-Youl Lee ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03F7/038

    CPC分类号： G03F7/0388 ,  G03F7/022 ,  G03F7/0226 ,  G03F7/0233 ,  G03F7/405

    摘要： An I-line photoresist composition, having excellent thermal stability at high temperature of 200-250° C., by which fine photoresist patterns form using an acid diffusion layer and a method for forming a fine pattern using the same, comprising: a polymer containing 1-99 mol % of repeating unit selected from a group consisting of 1-99 mol % of repeating unit represented by Formula 1, repeating unit represented by Formula 2, repeating unit represented by Formula 3 and mixture thereof; a photo active compound containing at least two diazonaphtoquinone (DNQ) groups; and an organic solvent. Formulas 1-3 are located in the specification. R* and R** are independently a hydrogen atom or a methyl group. R1 is a hydrogen atom or linear, branch or cyclic hydrocarbonyl group of 3-15 carbon atoms, containing or not containing 1-4 oxygen atoms. R2 is linear, branch or cyclic hydrocarbonyl group of 1-30 carbon atoms, containing or not containing 1-4 oxygen atoms.

    摘要翻译： 一种线型光致抗蚀剂组合物，在200-250℃的高温下具有优异的热稳定性，通过使用酸扩散层形成精细的光致抗蚀剂图案，以及使用其形成精细图案的方法，包括：含有 1-99摩尔％的选自1-99摩尔％的由式1表示的重复单元的重复单元，由式2表示的重复单元，由式3表示的重复单元及其混合物; 含有至少两个重氮萘醌（DNQ）基团的光活性化合物; 和有机溶剂。 公式1-3位于说明书中。 R *和R **独立地为氢原子或甲基。 R1是含有或不含有1-4个氧原子的3-15个碳原子的氢原子或直链，支链或环状烃基。 R2是含有或不含有1-4个氧原子的1-30个碳原子的直链，支链或环状烃基。