COPPER INTERCONNECTION FOR FLAT PANEL DISPLAY MANUFACTURING
    4.
    发明申请
    COPPER INTERCONNECTION FOR FLAT PANEL DISPLAY MANUFACTURING 审中-公开
    用于平板显示器制造的铜相互连接

    公开(公告)号:US20100317191A1

    公开(公告)日:2010-12-16

    申请号:US12066929

    申请日:2007-03-15

    IPC分类号: H01L21/768

    CPC分类号: H01L27/124

    摘要: A method of depositing a copper interconnection layer on a substrate for use in a flat panel display interconnection system, comprising the steps of: a) coating said substrate with a photoresist layer; b) patterning said photoresist layer to obtain a patterned photoresist substrate comprising at least one trench patterned into said photoresist layer; c) providing a first catalyzation layer onto the patterned photoresist substrate; d) providing an electroless plated layer of an insulation layer deposited onto said first catalyzation layer; e) removing the successively superimposed photoresist layer, catalyzation layer and insulation layer except in the at least one trench, to obtain a pattern of the first catalyzation layer with an insulation layer deposited thereon.

    摘要翻译: 一种在用于平板显示器互连系统的衬底上沉积铜互连层的方法,包括以下步骤:a)用光致抗蚀剂层涂覆所述衬底; b)图案化所述光致抗蚀剂层以获得图案化的光致抗蚀剂基底,其包括图案化到所述光致抗蚀剂层中的至少一个沟槽; c)在图案化的光致抗蚀剂基底上提供第一催化层; d)提供沉积在所述第一催化层上的绝缘层的化学镀层; e)除去所述至少一个沟槽中的连续叠加的光致抗蚀剂层,催化层和绝缘层,以获得其上沉积有绝缘层的第一催化层的图案。

    Electroless Niwp Adhesion and Capping Layers for Tft Copper Gate Process
    5.
    发明申请
    Electroless Niwp Adhesion and Capping Layers for Tft Copper Gate Process 审中-公开
    用于Tft铜栅工艺的无电Niwp粘合层和封盖层

    公开(公告)号:US20090004372A1

    公开(公告)日:2009-01-01

    申请号:US11995312

    申请日:2005-07-13

    IPC分类号: B05D5/12 C09K19/52 B32B17/06

    摘要: Electroless NiWP layers are used for TFT Cu gate process. The NiWP deposition process comprises the following steps. (a) Cleaning of the base surface using for example UV light, ozone solution and/or alkaline mixture solution, (b) micro-etching of the base surface using, e.g. diluted acid, (c) catalyzation of the base surface using, e.g. SnCl 2 and PdCl 2 solutions, (d) conditioning of the base surface using reducing agent solution, and (e) NiWP deposition. It has been discovered that NiWP layers deposited under certain conditions could provide good adhesion to the glass substrate and to the Cu layer with a good Cu barrier capability. A NiWP layer in useful for adhesion, capping and/or barrier layers for TFT Cu gate process (e.g. for flat screen display panels).

    摘要翻译: 无电镀NiWP层用于TFT Cu栅极工艺。 NiWP沉积工艺包括以下步骤。 (a)使用例如UV光,臭氧溶液和/或碱性混合物溶液清洗基底表面,(b)使用例如紫外光, 稀释的酸,(c)基底表面的催化。 SnCl 2和PdCl 2溶液,(d)使用还原剂溶液调节基底表面,和(e)NiWP沉积。 已经发现,在某些条件下沉积的NiWP层可以对玻璃基底和具有良好Cu阻挡能力的Cu层提供良好的粘附性。 用于TFT Cu栅极工艺(例如用于平板显示面板)的粘合,封盖和/或阻挡层的NiWP层。