Combustion fan installation structure of gas radiation oven range
    1.
    发明授权
    Combustion fan installation structure of gas radiation oven range 有权
    燃气灶安装结构燃气灶的范围

    公开(公告)号:US07878189B2

    公开(公告)日:2011-02-01

    申请号:US10536394

    申请日:2002-11-29

    IPC分类号: F24C15/20

    CPC分类号: F24C15/101 F24C3/067

    摘要: A combustion fan installation structure of a gas radiation oven range is disclosed in which a combustion fan (200) is coupled at a space outside a space where a radiant burner (40) is positioned. Since the temperature of the sucked air for combustion is constantly maintained, an air with a sufficient air density can be supplied. Thus, it can have a stable combustion performance. In addition, an influence of the temperature change generated when the oven or the grill is operated can be excluded. Accordingly, a reliability of a combustion performance of the gas radiation oven range to be mainly used in kitchens or in hotels can be improved.

    摘要翻译: 公开了一种燃气灶具范围的燃烧风扇安装结构,其中燃烧风扇(200)在位于辐射燃烧器(40)的空间外部的空间处连接。 由于用于燃烧的吸入空气的温度恒定地保持,所以能够供给足够的空气密度的空气。 因此,它可以具有稳定的燃烧性能。 此外,可以排除在烤箱或格栅操作时产生的温度变化的影响。 因此,可以提高主要在厨房或酒店中使用的气体放射线炉范围的燃烧性能的可靠性。

    Gas radiation oven range
    2.
    发明授权
    Gas radiation oven range 有权
    燃气辐射炉范围

    公开(公告)号:US07690374B2

    公开(公告)日:2010-04-06

    申请号:US10536395

    申请日:2002-11-29

    IPC分类号: F24C3/00

    CPC分类号: F24C15/101 F24C3/067

    摘要: A gas radiation oven range including an outer case (10) which is formed with an upper side opened, having an internal space, a ceramic glass (20) which is covered and combined with an upper end of the outer case (10), a plurality of burner housings (300) which are combined to be contacted with a lower surface of the ceramic glass (20), forms an exhaust passage (F) with the lower surface of the ceramic glass (20), and is integrally combined with a plurality of ports with different sizes, a radiant burner (40) which is combined with a side surface of the respective burner housings (300), for generating a radiant wave, combusting mixed gas and a shared discharge unit which is positioned among the burner housings (300) and combined to be connected to respective exhaust passages (F) which are formed at a side portion of the burner housings (300).

    摘要翻译: 一种气体放射线烘炉范围,包括外壳(10),其形成有具有内部空间的上侧开口的陶瓷玻璃(20),所述陶瓷玻璃(20)与所述外壳(10)的上端被覆盖并组合, 多个与陶瓷玻璃(20)的下表面接触的燃烧器壳体(300)与陶瓷玻璃(20)的下表面形成排气通道(F),并与 多个具有不同尺寸的端口,辐射燃烧器(40),其与各个燃烧器壳体(300)的侧表面组合,用于产生辐射波,燃烧混合气体和共享排放单元,其位于燃烧器壳体 (300)并且组合以连接到形成在燃烧器壳体(300)的侧部处的各个排气通道(F)。

    Combustion fan installation structure of gas radiation oven range
    3.
    发明申请
    Combustion fan installation structure of gas radiation oven range 有权
    燃气灶安装结构燃气灶的范围

    公开(公告)号:US20060070616A1

    公开(公告)日:2006-04-06

    申请号:US10536394

    申请日:2002-11-29

    IPC分类号: F24C15/20

    CPC分类号: F24C15/101 F24C3/067

    摘要: A combustion fan installation structure of a gas radiation oven range is disclosed in which a combustion fan (200) is coupled at a space outside a space where a radiant burner (40) is positioned. Since the temperature of the sucked air for combustion is constantly maintained, an air with a sufficient air density can be supplied. Thus, it can have a stable combustion performance. In addition, an influence of the temperature change generated when the oven or the grill is operated can be excluded. Accordingly, a reliability of a combustion performance of the gas radiation oven range to be mainly used in kitchens or in hotels can be improved.

    摘要翻译: 公开了一种燃气灶具范围的燃烧风扇安装结构,其中燃烧风扇(200)在位于辐射燃烧器(40)的空间外部的空间处连接。 由于用于燃烧的吸入空气的温度恒定地保持,所以能够供给足够的空气密度的空气。 因此,它可以具有稳定的燃烧性能。 此外,可以排除在烤箱或格栅操作时产生的温度变化的影响。 因此,可以提高主要在厨房或酒店中使用的气体放射线炉范围的燃烧性能的可靠性。

    Semiconductor memory device having a discharge path generator for global I/O lines
    4.
    发明授权
    Semiconductor memory device having a discharge path generator for global I/O lines 有权
    具有用于全局I / O线的放电路径发生器的半导体存储器件

    公开(公告)号:US08159860B2

    公开(公告)日:2012-04-17

    申请号:US12700437

    申请日:2010-02-04

    申请人: Dae-Hee Jung

    发明人: Dae-Hee Jung

    IPC分类号: G11C11/24

    摘要: A data path circuit includes a bit line sense amplifier, a local input/output line precharger connected to a local input/output line pair, a global input/output line precharger connected to a global input/output line pair, a column selector connecting a bit line pair connected to the bit line sense amplifier and the local input/output line pair to each other in response to a column selection signal, and a local input/output line selector connecting the local input/output line pair and the global input/output line pair to each other in response to a multiplexing control signal. A discharge path generator decreases the potential on the global input/output line pair down to a predetermined level in response to a data masking control signal which is activated earlier than the column selection signal during a data masking operation mode.

    摘要翻译: 数据路径电路包括位线读出放大器,连接到本地输入/输出线对的局部输入/输出线预充电器,连接到全局输入/输出线对的全局输入/输出线预充电器,连接 位线对,其响应于列选择信号彼此连接到位线读出放大器和本地输入/输出线对;以及本地输入/输出线选择器,连接本地输入/输出线对和全局输入/ 输出线对对应于多路复用控制信号。 放电路径发生器响应于在数据屏蔽操作模式期间早于列选择信号而被激活的数据屏蔽控制信号,将全局输入/输出线对上的电位降低到预定电平。

    Semiconductor memory device parallel bit test circuits
    5.
    发明授权
    Semiconductor memory device parallel bit test circuits 有权
    半导体存储器件并行位测试电路

    公开(公告)号:US07900101B2

    公开(公告)日:2011-03-01

    申请号:US12389607

    申请日:2009-02-20

    申请人: Dae-Hee Jung

    发明人: Dae-Hee Jung

    IPC分类号: G11C29/00

    摘要: Parallel bit test circuits for use in a semiconductor memory devices are provided which include a first bus that has N bus lines that are configured to transfer a first group of N bits of test result data and a second bus that has N bus lines that are configured to transfer a second group of N bits of test result data. These parallel bit test circuits further include a switching unit that has a plurality of unit switches, where each switch is configured to connect a bus line of the first bus and a respective bus line of the second bus in response to a switching control signal that is applied after the second group of N bits of test result data are output from the second bus, to transfer the first group of N bits of test result data from the first bus to the second bus so as to output a total of 2N bits of test result data through the second bus.

    摘要翻译: 提供了用于半导体存储器件的并行位测试电路,其包括具有N个总线的第一总线,其被配置为传送测试结果数据的N位的第一组N位和配置有N个总线的第二总线 以传送第二组N位测试结果数据。 这些并行位测试电路还包括具有多个单元开关的开关单元,其中每个开关被配置为响应于开关控制信号而连接第一总线的总线和第二总线的相应总线 在从第二总线输出第二组N位测试结果数据之后,将第一组N位测试结果数据从第一总线传送到第二总线,以输出总共2N位的测试 结果数据通过第二个总线。

    Gas radiation oven range
    6.
    发明申请
    Gas radiation oven range 有权
    燃气辐射炉范围

    公开(公告)号:US20060048767A1

    公开(公告)日:2006-03-09

    申请号:US10536395

    申请日:2002-11-29

    IPC分类号: F24C15/10

    CPC分类号: F24C15/101 F24C3/067

    摘要: A gas radiation oven range including an outer case (10) which is formed with an upper side opened, having an internal space, a ceramic glass (20) which is covered and combined with an upper end of the outer case (10), a plurality of burner housings (300) which are combined to be contacted with a lower surface of the ceramic glass (20), forms an exhaust passage (F) with the lower surface of the ceramic glass (20), and is integrally combined with a plurality of ports with different sizes, a radiant burner (40) which is combined with a side surface of the respective burner housings (300), for generating a radiant wave, combusting mixed gas and a shared discharge unit which is positioned among the burner housings (300) and combined to be connected to respective exhaust passages (F) which are formed at a side portion of the burner housings (300).

    摘要翻译: 一种气体放射线烘炉范围,包括外壳(10),其形成有具有内部空间的上侧开口的陶瓷玻璃(20),所述陶瓷玻璃(20)与所述外壳(10)的上端被覆盖并组合, 多个与陶瓷玻璃(20)的下表面接触的燃烧器壳体(300)与陶瓷玻璃(20)的下表面形成排气通道(F),并与 多个具有不同尺寸的端口,辐射燃烧器(40),其与各个燃烧器壳体(300)的侧表面组合,用于产生辐射波,燃烧混合气体和共享排放单元,其位于燃烧器壳体 (300)并且组合以连接到形成在燃烧器壳体(300)的侧部处的各个排气通道(F)。

    Semiconductor memory device with late write function and data input/output method therefor
    7.
    发明申请
    Semiconductor memory device with late write function and data input/output method therefor 失效
    具有后期写入功能的半导体存储器件及其数据输入/输出方法

    公开(公告)号:US20050135160A1

    公开(公告)日:2005-06-23

    申请号:US11005544

    申请日:2004-12-06

    IPC分类号: G11C7/10 G11C11/413 G11C7/02

    摘要: An integrated circuit memory device includes a memory cell array, a plurality of data input lines configured to convey data to the memory cell array and a plurality of data output lines configured to convey data from the memory cell array. The device also includes a memory write buffer that receives write data for the memory cell array and responsively drives the data input lines, a sense amplifier and a plurality of sense amplifier input lines configured to convey data to the sense amplifier. The device further includes a selecting circuit coupled to the data input lines, to the data output lines and to the sense amplifier input lines and configured to selectively couple the data input lines to the sense amplifier input lines responsive to a control signal.

    摘要翻译: 集成电路存储器件包括存储单元阵列,被配置为将数据传送到存储单元阵列的多条数据输入线以及被配置为从存储单元阵列传送数据的多条数据输出线。 该装置还包括存储器写入缓冲器,其接收存储单元阵列的写入数据并且响应地驱动数据输入线,读出放大器和多个读出放大器输入线,其被配置为将数据传送到读出放大器。 该装置还包括耦合到数据输入线,数据输出线和读出放大器输入线的选择电路,并且被配置成响应于控制信号将数据输入线选择性地耦合到读出放大器输入线。

    Memory systems, on-die termination (ODT) circuits, and method of ODT control
    8.
    发明授权
    Memory systems, on-die termination (ODT) circuits, and method of ODT control 失效
    存储器系统,片上终端(ODT)电路和ODT控制方法

    公开(公告)号:US07786752B2

    公开(公告)日:2010-08-31

    申请号:US11873461

    申请日:2007-10-17

    申请人: Reum Oh Dae-Hee Jung

    发明人: Reum Oh Dae-Hee Jung

    IPC分类号: H03K17/16 H03K19/003

    摘要: According to one aspect, an on-die termination (ODT) circuit is controlled during transition from a first power mode to a second power mode of a memory device. The transition from an asynchronous ODT circuit path to a synchronous ODT circuit path is delayed to compensate for an operational latency of a delay locked loop (DLL) circuit.

    摘要翻译: 根据一个方面,在从存储器件的第一功率模式转换到第二功率模式的过程中,管芯端接(ODT)电路被控制。 从异步ODT电路路径到同步ODT电路路径的转换被延迟以补偿延迟锁定环(DLL)电路的操作等待时间。

    Semiconductor memory device having wordline enable signal line and method of arranging the same
    10.
    发明授权
    Semiconductor memory device having wordline enable signal line and method of arranging the same 失效
    具有字线使能信号线的半导体存储器件及其布置方法

    公开(公告)号:US07274584B2

    公开(公告)日:2007-09-25

    申请号:US11330819

    申请日:2006-01-11

    IPC分类号: G11C5/06

    CPC分类号: G11C8/08

    摘要: Provided are a semiconductor memory device having a wordline enable signal line arrangement scheme, which can reduce VPP power consumption and can increase the speed of driving a sub-wordline, and a method of arranging wordline enable signal lines in the semiconductor memory device. In the semiconductor memory device, a wordline enable driver is arranged in a row decoder region outside a memory array region, and the wordline enable signal lines are formed of an uppermost metal layer among three metal layers constituting the semiconductor memory device. Each of the wordline enable signal lines is connected to a sub-wordline driver, rather than to a pair of sub-wordline drivers. In other words, the wordline enable signal lines vertically and horizontally extend forming an inverse L shape.

    摘要翻译: 提供一种具有字线使能信号线布置方案的半导体存储器件,其可以降低VPP功耗并且可以提高驱动子字线的速度,以及在半导体存储器件中布置字线使能信号线的方法。 在半导体存储器件中,字线使能驱动器被布置在存储器阵列区域外的行解码器区域中,并且字线使能信号线由构成半导体存储器件的三个金属层中的最上面的金属层形成。 每个字线使能信号线都连接到子字线驱动器,而不是一对子字线驱动器。 换句话说,字线使能信号线垂直和水平地延伸形成倒L形。