Method of forming a through-substrate interconnect
    3.
    发明授权
    Method of forming a through-substrate interconnect 有权
    形成贯通基板互连的方法

    公开(公告)号:US06716737B2

    公开(公告)日:2004-04-06

    申请号:US10208363

    申请日:2002-07-29

    IPC分类号: H01L2144

    CPC分类号: H01L21/76898 H01L23/481

    摘要: A method of forming a through-substrate interconnect for a circuit element in a microelectronics device is provided. The device is formed on a substrate having a frontside and a backside, and includes a circuit element formed on the frontside of the substrate connected to a contact pad formed on the backside of the substrate by the through-substrate interconnect. The method includes forming a first interconnect structure extending into the substrate from the frontside of the substrate, at least partially forming the circuit element such that the circuit element is in electrical communication with the first interconnect structure, and forming a second interconnect structure extending into the substrate from the backside of the substrate after forming the first interconnect structure such that the second interconnect structure is in electrical communication with the first interconnect structure.

    摘要翻译: 提供了一种在微电子器件中形成用于电路元件的贯通衬底互连的方法。 该器件形成在具有前侧和背面的衬底上,并且包括形成在衬底的前侧的电路元件,该电路元件通过贯穿衬底互连连接到形成在衬底的背面上的接触焊盘。 该方法包括形成从衬底的前侧延伸到衬底中的第一互连结构,至少部分地形成电路元件,使得电路元件与第一互连结构电连通,以及形成延伸到 在形成第一互连结构之后,从衬底的背面起第二互连结构与第一互连结构电连通的衬底。

    Fluid-ejection devices and a deposition method for layers thereof
    7.
    发明授权
    Fluid-ejection devices and a deposition method for layers thereof 有权
    流体喷射装置及其层的沉积方法

    公开(公告)号:US07517060B2

    公开(公告)日:2009-04-14

    申请号:US11345755

    申请日:2006-02-02

    IPC分类号: B41J2/05

    摘要: A cavitation structure for a print head has a first dielectric layer overlying at least a first portion of a substrate. A second dielectric layer has a first portion overlying at least a second portion of the substrate and a second portion, different from the first portion of the second dielectric layer, overlying at least a portion of the first dielectric layer. A cavitation layer has a first portion in contact with the first dielectric layer and a second portion in lateral contact with the second portion of the second dielectric layer. A third dielectric layer is disposed on only the first portion of the second dielectric layer.

    摘要翻译: 用于打印头的空化结构具有覆盖在基底的至少第一部分上的第一介电层。 第二电介质层具有覆盖衬底的至少第二部分的第一部分和与第二介电层的第一部分不同的第二部分,覆盖第一介电层的至少一部分。 空化层具有与第一介电层接触的第一部分和与第二介电层的第二部分侧向接触的第二部分。 第三电介质层仅设置在第二电介质层的第一部分上。

    Electroless deposition methods and systems
    10.
    发明申请
    Electroless deposition methods and systems 审中-公开
    无电沉积方法和系统

    公开(公告)号:US20050006339A1

    公开(公告)日:2005-01-13

    申请号:US10618049

    申请日:2003-07-11

    摘要: Methods and systems for depositing metal patterns on a substrate are provided. Accordingly, an electroless active layer can be formed on a substrate. Ink-jet techniques can then be used to independently ink-jet at least two components of an electroless deposition composition onto a variety of substrates. A metal composition can be ink-jetted onto the electroless active layer. The metal composition can contain a metal salt and optional additives. A reducing agent composition can be ink-jetted either subsequent to or prior to ink-jetting of the metal composition to form an electroless composition on the substrate. The metal salt and reducing agent react to form a metal pattern which can be used in formation of electronic devices or other products. The described ink-jettable compositions are stable over a wide range of conditions and allow for wide latitude in inkjet formulations and choice of substrates.

    摘要翻译: 提供了用于在衬底上沉积金属图案的方法和系统。 因此,可以在基板上形成无电活性层。 然后可以使用喷墨技术独立地将无电沉积组合物的至少两种组分喷射到各种基底上。 可以将金属组合物喷墨到无电活性层上。 金属组合物可以含有金属盐和任选的添加剂。 还原剂组合物可以在喷墨金属组合物之前或之前喷墨,以在基材上形成无电解组合物。 金属盐和还原剂反应形成可用于形成电子器件或其他产品的金属图案。 所描述的喷墨组合物在宽范围的条件下是稳定的,并且允许在喷墨配方中的宽范围和基底的选择。