公开(公告)号：US20120001220A1

公开(公告)日：2012-01-05

申请号：US13255037

申请日：2010-03-05

申请人： Daisuke Hiraiwa ,  Hironao Shinohara

发明人： Daisuke Hiraiwa ,  Hironao Shinohara

IPC分类号： H01L33/22

CPC分类号： H01L33/145 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

摘要翻译： 公开了一种III族氮化物半导体发光器件，其抑制透光电极和直接在电极下方的半导体层的电流集中，以提高发光效率，抑制电极中的光吸收或由于多次反射引起的光损失 提高光提取效率，具有优异的外量子效率和电特性。 其中n型半导体层（4），发光层（5）和p型半导体层（6）依次层叠的半导体层（20）形成在单晶底层（ 3），其形成在基板（11）上。 在p型半导体层（6）上形成透光电极（7）。 绝缘层（15）形成在p型半导体层（6）的至少一部分上，透光电极（7）形成为覆盖绝缘层（15）。 在透光电极（7）的表面（7a）上，在与p型半导体层（6）上设置的绝缘层（15）对应的位置A设置正极焊盘（8）。 n型半导体层（4）的薄层电阻低于透光电极（7）的薄层电阻。

公开(公告)号：US08502254B2

公开(公告)日：2013-08-06

申请号：US13255037

申请日：2010-03-05

申请人： Daisuke Hiraiwa ,  Hironao Shinohara

发明人： Daisuke Hiraiwa ,  Hironao Shinohara

IPC分类号： H01L33/22

CPC分类号： H01L33/145 ,  H01L33/007 ,  H01L33/025 ,  H01L33/42

摘要： Disclosed is a group III nitride semiconductor light-emitting device which suppresses electric current concentration in a light-transmitting electrode and a semiconductor layer directly below an electrode to enhance light emission efficiency, suppresses light absorption in the electrode or light loss due to multiple reflection therein to enhance light extraction efficiency, and has superior external quantum efficiency and electric characteristics. A semiconductor layer (20), in which an n-type semiconductor layer (4), a light-emitting layer (5) and a p-type semiconductor layer (6) are sequentially layered, is formed on a single-crystal underlayer (3) which is formed on a substrate (11). A light-transmitting electrode (7) is formed on the p-type semiconductor layer (6). An insulation layer (15) is formed on at least a part of the p-type semiconductor layer (6), and the light-transmitting electrode (7) is formed to cover the insulation layer (15). A positive electrode bonding pad (8) is provided in a position A corresponding to the insulation layer (15) provided on the p-type semiconductor layer (6), on a surface (7a) of the light-transmitting electrode (7). A sheet resistance of the n-type semiconductor layer (4) is lower than a sheet resistance of the light-transmitting electrode (7).

摘要翻译： 公开了一种III族氮化物半导体发光器件，其抑制透光电极和直接在电极下方的半导体层的电流集中，以提高发光效率，抑制电极中的光吸收或由于多次反射引起的光损失 提高光提取效率，具有优异的外量子效率和电特性。 其中n型半导体层（4），发光层（5）和p型半导体层（6）依次层叠的半导体层（20）形成在单晶底层（ 3），其形成在基板（11）上。 在p型半导体层（6）上形成透光电极（7）。 绝缘层（15）形成在p型半导体层（6）的至少一部分上，透光电极（7）形成为覆盖绝缘层（15）。 在透光电极（7）的表面（7a）上，在与p型半导体层（6）上设置的绝缘层（15）对应的位置A设置正极焊盘（8）。 n型半导体层（4）的薄层电阻低于透光性电极（7）的薄层电阻。

公开(公告)号：US20110018022A1

公开(公告)日：2011-01-27

申请号：US12922422

申请日：2009-03-13

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Masato Nakata ,  Hisayuki Miki ,  Naoki Fukunaga ,  Hironao Shinohara

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device of the present invention includes: a substrate (101); a laminate semiconductor layer (20) including a light-emitting layer (105) formed on the substrate (101); a translucent electrode (109) formed on a top surface of the laminate semiconductor layer (20); and a junction layer (110) and a bonding pad electrode (107) formed on the translucent electrode (109), wherein the bonding pad electrode (107) has a laminate structure including a metal reflective layer (107a) and a bonding layer (107c) that are sequentially laminated from the translucent electrode (109) side, and the metal reflective layer (107a) is made of at least one kind of metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt, or an alloy containing the metal.

摘要翻译： 本发明的半导体发光器件包括：衬底（101）; 包括形成在所述基板（101）上的发光层（105）的层叠半导体层（20）。 形成在层叠半导体层（20）的顶面上的透光性电极（109）。 以及形成在所述透光性电极（109）上的接合层（110）和接合焊盘电极（107），其中所述接合焊盘电极（107）具有包括金属反射层（107a）和接合层（107c）的层叠结构 ），并且金属反射层（107a）由选自Ag，Al，Ru，Rh，Pd，Os，Ir中的至少一种金属制成 和Pt，或含有金属的合金。

公开(公告)号：US20110255294A1

公开(公告)日：2011-10-20

申请号：US13141849

申请日：2009-12-15

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Remi Ohba

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Remi Ohba

IPC分类号： F21V15/01 ,  H01L33/60

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).

摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 包含形成在所述基板（101）上的发光层的层叠半导体层（20）; 形成在层叠半导体层（20）的上表面（106c）上的第一电极（111）; 以及形成在通过部分切割层叠半导体层（20）而形成的暴露表面（104c）上的第二电极（108），其中第一电极（111）包括含有孔部分（109a）的透明电极（109） 层叠半导体层（20）的上表面（106c）通过其暴露，形成在孔部（109a）的底面（109b）和内壁（109d）上的接合层（110） 形成为覆盖接合层（110）的接合焊盘电极（120）。

公开(公告)号：US20130037825A1

公开(公告)日：2013-02-14

申请号：US13639608

申请日：2011-02-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe

IPC分类号： H01L33/16 ,  H01L33/08

CPC分类号： H01S5/0202 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/3202

摘要： Disclosed is a semiconductor light emitting chip (20) that is composed of: a substrate (10), which has the C plane of a sapphire single crystal as the front surface, and the side surfaces (25, 26) configured of planes that intersect all the planes equivalent to the M plane of the sapphire single crystal, and which includes modified regions (23, 24) in the side surfaces (25, 26), the modified regions being formed by laser radiation; and a light emitting element (12), which is provided on the substrate front surface (10a) of the substrate (10). In the semiconductor light emitting chip, a tilt of the substrate side surfaces with respect to the substrate front surface is suppressed. Also disclosed is a method for processing the substrate.

摘要翻译： 公开了一种半导体发光芯片（20），其包括：具有作为前表面的蓝宝石单晶的C面的基板（10）和由相交的平面构成的侧面（25,26） 所有相当于蓝宝石单晶的M平面的平面，其包括在侧表面（25,26）中的改质区域（23,24），所述改质区域由激光辐射形成; 以及设置在基板（10）的基板前表面（10a）上的发光元件（12）。 在半导体发光芯片中，抑制了基板侧面相对于基板正面的倾斜。 还公开了一种处理衬底的方法。

公开(公告)号：US08569735B2

公开(公告)日：2013-10-29

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US20110089401A1

公开(公告)日：2011-04-21

申请号：US12999530

申请日：2009-06-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe ,  Remi Ohba ,  Munetaka Watanabe

IPC分类号： H01L33/04 ,  H01L33/46 ,  H01L33/42

CPC分类号： H01L33/38 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L2224/73265 ,  H01L2933/0016

摘要： A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode (111) formed over the upper face of the laminated semiconductor layer, and an other electrode formed over the exposed surface of the semiconductor layer, from which the laminated semiconductor layer is partially cut off. The one electrode (111) includes a junction layer (110) and a bonding pad electrode (120) formed to cover the junction layer. The bonding pad electrode has a maximum thickness larger than that of the junction layer, and is composed of one or two or more layers. Slopes (110c), (117c) and (119c), which are made gradually thinner toward the outer circumference, are formed in the outer circumference portions (110d) and (120d) of the junction layer and the bonding pad electrode. Also disclosed is a method for manufacturing the element and a lamp.

摘要翻译： 一种半导体发光元件，包括基板，层叠半导体层，其包括形成在基板上的发光层，形成在层叠半导体层的上表面上的一个电极（111）和形成在所述暴露表面上的另一电极 的半导体层，层叠半导体层从该半导体层被部分切断。 一个电极（111）包括形成为覆盖接合层的接合层（110）和接合焊盘电极（120）。 接合焊盘电极的最大厚度大于接合层电极的最大厚度，并且由一层或两层以上构成。 在接合层和接合焊盘电极的外周部（110d）和（120d）中形成有朝向外周逐渐变薄的斜面（110c），（117c）和（119c）。 还公开了一种用于制造元件和灯的方法。

公开(公告)号：US08691602B2

公开(公告)日：2014-04-08

申请号：US13447590

申请日：2012-04-16

申请人： Daisuke Hiraiwa ,  Takehiko Okabe

发明人： Daisuke Hiraiwa ,  Takehiko Okabe

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L33/20

摘要： In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step 103), forming first modified regions extending toward the first direction and second modified regions extending along the substrate front surface and toward a second direction different from the first direction in the substrate (step 104 and step 105), and dividing the element-group formation substrate using the first modified regions and the second modified regions (step 106).

摘要翻译： 在制造基板由蓝宝石单晶构成的半导体发光芯片时，能够抑制所得半导体发光芯片中的半导体发光元件的龟裂。 半导体发光芯片通过在形成有半导体发光元件的前表面上的元件组形成基板上形成，前表面由蓝宝石单晶的C面构成，分割槽 沿着蓝宝石单晶的M面和基板前表面侧的前表面朝向第一方向延伸（步骤103），形成朝向第一方向延伸的第一改质区域和沿基板延伸的第二改质区域 并且朝向与衬底中的第一方向不同的第二方向（步骤104和步骤105），并且使用第一修改区域和第二修改区域对元件组形成衬底进行分割（步骤106）。

公开(公告)号：US08969905B2

公开(公告)日：2015-03-03

申请号：US13141849

申请日：2009-12-15

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Remi Ohba

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Remi Ohba

IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/32 ,  H01L33/42

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).

摘要翻译： 本发明的半导体发光装置（1）包括：基板（101）; 包含形成在所述基板（101）上的发光层的层叠半导体层（20）; 形成在层叠半导体层（20）的上表面（106c）上的第一电极（111）; 以及形成在通过部分切割所述层叠半导体层（20）形成的暴露表面（104c）上的第二电极（108），其中所述第一电极（111）包括含有孔部分（109a）的透明电极（109） 层叠半导体层（20）的上表面（106c）通过其暴露，形成在孔部（109a）的底面（109b）和内壁（109d）上的接合层（110） 形成为覆盖接合层（110）的接合焊盘电极（120）。

公开(公告)号：US08884329B2

公开(公告)日：2014-11-11

申请号：US13451192

申请日：2012-04-19

申请人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Mamoru Kitsukawa

发明人： Takehiko Okabe ,  Daisuke Hiraiwa ,  Mamoru Kitsukawa

IPC分类号： H01L33/00 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2933/0016 ,  H01L2924/00014

摘要： It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer.

摘要翻译： 本发明的目的是改善电极的接合性能和用于向半导体供电的电极的可靠性。 半导体发光元件包括n型半导体层，发光层，p型半导体层，透明导电层，形成在透明导电层上的p电极和形成在透明导电层上的n电极 n型半导体层。 p电极包括由包含Au并且暴露于外部的金属材料构成的p侧第二金属层和由含有金属的金属的金属材料构成的p侧第一金属层，硬度高于金属 构成p侧第二金属层的材料，p侧第一金属层沿着p侧第二金属层设置得比p侧第二金属层更靠近透明导电层。