公开(公告)号：US20050176971A1

公开(公告)日：2005-08-11

申请号：US10517494

申请日：2003-07-22

申请人： Daisuke Ura ,  Hiroyuki Katsuta ,  Toshio Kitashima ,  Kenichi Sato

发明人： Daisuke Ura ,  Hiroyuki Katsuta ,  Toshio Kitashima ,  Kenichi Sato

IPC分类号： C07D333/36

CPC分类号： C07D333/36

摘要： A method for reducing a sulfur-containing compound by hydrogenation using a noble metal catalyst which method is exemplified by an industrial method for producing a 2-alkyl-3-aminothiophene derivative with high economical efficiency by hydrogenating a 2-alkenyl-3-aminothiophene derivative using the noble metal catalyst. 2-Alkyl-3-aminothiophene derivatives are useful compounds in the fields of medicine and agriculture, and in particular, useful in bactericides for agriculture or gardening, or intermediates of the bactericides. The hydrogenation reaction temperature is controlled at 150° C. to 300° C. and the method allows the used noble metal catalyst to be recovered and reused.

摘要翻译： 使用贵金属催化剂通过氢化还原含硫化合物的方法，该方法的例子是通过氢化2-链烯基-3-氨基噻吩衍生物，经济地制备2-烷基-3-氨基噻吩衍生物的工业方法 使用贵金属催化剂。 2-烷基-3-氨基噻吩衍生物是医药和农业领域中有用的化合物，特别是用于农业或园艺的杀菌剂或杀菌剂的中间体。 将氢化反应温度控制在150℃至300℃，并且该方法允许回收和重复使用所用的贵金属催化剂。

公开(公告)号：US07196207B2

公开(公告)日：2007-03-27

申请号：US10517494

申请日：2003-07-22

申请人： Daisuke Ura ,  Hiroyuki Katsuta ,  Toshio Kitashima ,  Kenichi Sato

发明人： Daisuke Ura ,  Hiroyuki Katsuta ,  Toshio Kitashima ,  Kenichi Sato

IPC分类号： C07D333/36

CPC分类号： C07D333/36

摘要： A method for reducing a sulfur-containing compound by hydrogenation using a noble metal catalyst which method is exemplified by an industrial method for producing a 2-alkyl-3-aminothiophene derivative with high economical efficiency by hydrogenating a 2-alkenyl-3-aminothiophene derivative using the noble metal catalyst. 2-Alkyl-3-aminothiophene derivatives are useful compounds in the fields of medicine and agriculture, and in particular, useful in bactericides for agriculture or gardening, or intermediates of the bactericides. The hydrogenation reaction temperature is controlled at 150° C. to 300° C. and the method allows the used noble metal catalyst to be recovered and reused.

摘要翻译： 使用贵金属催化剂通过氢化还原含硫化合物的方法，该方法的例子是通过氢化2-链烯基-3-氨基噻吩衍生物，经济地制备2-烷基-3-氨基噻吩衍生物的工业方法 使用贵金属催化剂。 2-烷基-3-氨基噻吩衍生物是医药和农业领域中有用的化合物，特别是用于农业或园艺的杀菌剂或杀菌剂的中间体。 将氢化反应温度控制在150℃至300℃，并且该方法允许回收和重复使用所用的贵金属催化剂。

公开(公告)号：US20140333067A1

公开(公告)日：2014-11-13

申请号：US14346118

申请日：2012-09-11

申请人： Tsuneyuki Okabe ,  Shuji Moriya ,  Kenichi Sato ,  Tomohiro Nakata ,  Tsutomu Shinohara ,  Michio Yamaji

发明人： Tsuneyuki Okabe ,  Shuji Moriya ,  Kenichi Sato ,  Tomohiro Nakata ,  Tsutomu Shinohara ,  Michio Yamaji

IPC分类号： F16L23/036

CPC分类号： F16L23/036 ,  F16L23/0283 ,  F16L23/18

摘要： Provided is a joint which can decrease the number of kinds of parts. A bolt 5 has a shaft portion 14 which is constituted of a distal end portion on which male threads 14a are formed and a remaining portion 14b on which male threads are not formed. First and second joint members 2, 3 have the same shape. A shaft insertion hole 15 which is disposed on an abutting end surface side of the joint member and a threaded hole 16 which is communicated with the shaft insertion hole 15 and extends to an end surface of the joint member on a side opposite to an abutting end surface of the joint member are formed in the first and second joint members 2, 3.

摘要翻译： 提供可以减少部件种类的数量的接头。 螺栓5具有轴部14，其由形成有公螺纹14a的前端部和未形成有公螺纹的剩余部14b构成。 第一和第二接头构件2,3具有相同的形状。 设置在接头构件的抵接端面侧的轴插入孔15和与轴插入孔15连通并在与抵接端相反的一侧延伸到接头构件的端面的螺纹孔16 接头构件的表面形成在第一和第二接头构件2,3中。

公开(公告)号：US08784972B2

公开(公告)日：2014-07-22

申请号：US12679388

申请日：2008-10-30

申请人： Kenichi Sato ,  Kenji Ando ,  Takuaki Harada ,  Yasuhiro Nakano

发明人： Kenichi Sato ,  Kenji Ando ,  Takuaki Harada ,  Yasuhiro Nakano

IPC分类号： B32B3/10 ,  B32B3/28 ,  B32B5/26 ,  B32B38/06 ,  B32B7/02

CPC分类号： B32B3/28 ,  A61F13/51104 ,  B32B3/266 ,  B32B5/26 ,  B32B7/02 ,  B32B38/06 ,  B32B2250/20 ,  B32B2307/718 ,  B32B2307/726 ,  B32B2307/734 ,  B32B2309/14 ,  B32B2432/00 ,  B32B2555/00 ,  Y10T156/1002 ,  Y10T428/24281 ,  Y10T428/24331 ,  Y10T428/24479 ,  Y10T428/24562 ,  Y10T428/24595 ,  Y10T428/24612 ,  Y10T428/24661 ,  Y10T428/24678

摘要： Disclosed is a composite sheet 1 composed of a substantially flat lower fibrous sheet 3 and an upper fibrous sheet 2 bonded to the lower fibrous sheet 3. The upper fibrous sheet 2 is three-dimensionally textured with a number of projections 5 and a number of depression 6 each of which is located between every adjacent two of the projections 5. The projections 5 and the depressions 6 alternate in both a first direction of the composite sheet 1 and a second direction perpendicular to the first direction. Each projection 5 has a pair of opposing first walls 51 parallel to the first direction and a pair of opposing second walls 52 parallel to the second direction. The basis weight of the first walls 51 is different from that of the second walls 52.

摘要翻译： 公开了一种复合片材1，其由基本平坦的下纤维片材3和粘合到下纤维片材3上的上纤维片材2组成。上纤维片材2具有多个突起5和多个凹陷部分的三维纹理 它们各自位于每个相邻的两个突起5之间。突起5和凹陷6在复合片1的第一方向和垂直于第一方向的第二方向上交替。 每个突起5具有平行于第一方向的一对相对的第一壁51和平行于第二方向的一对相对的第二壁52。 第一壁51的基重与第二壁52的基重不同。

公开(公告)号：US08653900B2

公开(公告)日：2014-02-18

申请号：US12921668

申请日：2009-03-13

申请人： Kenichi Sato ,  Tomoaki Yamamoto

发明人： Kenichi Sato ,  Tomoaki Yamamoto

IPC分类号： H03B5/36

CPC分类号： H03B5/36 ,  H03K5/003

摘要： There is provided an oscillator using a high-frequency crystal resonator which can satisfy the drive level needed for the crystal resonator and expand a variable frequency range. An oscillator having an oscillation circuit CC for oscillating the resonator SS is provided with a limiter circuit LM1 as a load of the resonator SS which is inductive and is a load circuit for limiting an oscillation amplitude. According to this configuration, the action of the limiter circuit LM1 allows satisfaction of the drive level needed for the crystal resonator and expansion of the variable frequency range.

摘要翻译： 提供了使用能够满足晶体谐振器所需的驱动电平并扩大可变频率范围的高频晶体谐振器的振荡器。 具有用于振荡谐振器SS的振荡电路CC的振荡器设置有限制电路LM1作为感应式谐振器SS的负载，并且是用于限制振荡幅度的负载电路。 根据该结构，限幅电路LM1的作用使得满足晶体谐振器所需的驱动电平和扩大可变频率范围。

公开(公告)号：US20130270666A1

公开(公告)日：2013-10-17

申请号：US13881949

申请日：2011-10-24

申请人： Kenichi Sato ,  Kazuhisa Yamamura ,  Shinji Ohsuka

发明人： Kenichi Sato ,  Kazuhisa Yamamura ,  Shinji Ohsuka

IPC分类号： H01L27/144

CPC分类号： H01L27/1446 ,  H01L27/146 ,  H01L27/14643 ,  H01L31/02027

摘要： This photodiode array 10 includes quenching resistors 7 which are connected in series to respective avalanche photodiodes APDs, a peripheral wiring WL which surrounds a region in which the plurality of avalanche photodiodes APDs are formed, and a plurality of relay wirings 8 which are electrically connected to the peripheral wiring WL, so as to respectively connect at least two places of the peripheral wiring WL. One of an anode and a cathode of each avalanche photodiode APD is electrically connected to any one of the relay wirings 8 via the quenching resistor 7, and the other of the anode and the cathode of each avalanche photodiode APD is electrically connected to another electrode 6 provided on a semiconductor substrate.

摘要翻译： 该光电二极管阵列10包括与相应的雪崩光电二极管APD串联连接的淬火电阻器7，围绕形成有多个雪崩光电二极管APD的区域的外围布线WL，以及多个继电器布线8， 周边布线WL，以分别连接外围布线WL的至少两个位置。 每个雪崩光电二极管APD的阳极和阴极之一经由淬火电阻7与继电器布线8中的任何一个电连接，并且每个雪崩光电二极管APD的阳极和阴极中的另一个电连接到另一个电极6 设置在半导体基板上。

公开(公告)号：US08341937B2

公开(公告)日：2013-01-01

申请号：US11717784

申请日：2007-03-14

申请人： Sunki I ,  Kenichi Sato ,  Motoharu Akaba ,  Kimiyoshi Nishizawa ,  Kengo Kubo

发明人： Sunki I ,  Kenichi Sato ,  Motoharu Akaba ,  Kimiyoshi Nishizawa ,  Kengo Kubo

IPC分类号： F01N3/00

CPC分类号： F01N3/2053 ,  F01N3/101 ,  F01N9/00 ,  F01N11/007 ,  F01N13/009 ,  F01N13/0093 ,  F01N2550/10 ,  F01N2560/025 ,  F01N2560/14 ,  F02D41/1495 ,  Y02A50/2324 ,  Y02T10/22 ,  Y02T10/47

摘要： An apparatus for an exhaust gas system includes a main exhaust passage, a main catalytic converter disposed in the main exhaust passage, a bypass exhaust passage, a bypass catalytic converter disposed in the bypass exhaust passage, and a valve configured to open or close a section of the main exhaust passage. The bypass exhaust passage bypasses the main exhaust passage between a branch point of the bypass exhaust passage out of the main exhaust passage and a junction with the main exhaust passage at a upstream side of the main catalytic converter. A first sensor indicates a first air-fuel ratio of exhaust gas in the bypass exhaust passage. A second sensor indicates a second air-fuel ratio of exhaust gas flowing into the main catalytic converter. A controller determines whether the valve in the closed configuration leaks exhaust gas based on the first and second air-fuel ratios of exhaust gas.

摘要翻译： 一种废气系统的装置，包括主排气通道，设置在主排气通道中的主催化转化器，旁通排气通道，设置在旁通排气通道中的旁通催化转化器和构造成打开或关闭部分 的主排气通道。 旁通排气通道在主排气通道的旁路排气通路的分支点与主催化转化器的上游侧的主排气通路的旁路之间绕过主排气通路。 第一传感器表示旁通排气通道中的排气的第一空燃比。 第二传感器表示流入主催化转化器的废气的第二空燃比。 控制器确定封闭结构中的阀是否基于排气的第一和第二空气 - 燃料比泄漏废气。

公开(公告)号：USD668210S1

公开(公告)日：2012-10-02

申请号：US29395876

申请日：2012-04-16

申请人： Kenichi Sato

设计人： Kenichi Sato

公开(公告)号：US08038908B2

公开(公告)日：2011-10-18

申请号：US12734880

申请日：2008-08-19

申请人： Takayoshi Hirai ,  Hidekazu Nishino ,  Kenichi Sato ,  Naoyo Okamoto

发明人： Takayoshi Hirai ,  Hidekazu Nishino ,  Kenichi Sato ,  Naoyo Okamoto

IPC分类号： H01B1/04

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/15 ,  Y10S977/752 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/932 ,  Y10T428/2918

摘要： An aggregate of carbon nanotubes satisfying all of the following requirements (1) to (3):(1) the volume resistivity is from 1×10−5 Ω·cm to 5×10−3 Ω·cm;(2) at least 50 out of 100 carbon nanotubes are double-walled carbon nanotubes in observation by a transmission electron microscope; and(3) the weight loss from 200° C. to 400° C. in thermogravimetry at a temperature rise of 10° C/min is from 5% to 20%.

摘要翻译： 满足以下所有要求（1）〜（3）的碳纳米管的集合体：（1）体积电阻率为1×10-5〜OHgr·cm〜5×10-3·OHgr·cm; （2）通过透射电子显微镜观察，100个碳纳米管中的至少50个是双壁碳​​纳米管; 和（3）在10℃/分钟的温度升高下，在热重分析中从200℃至400℃的重量损失为5％至20％。

公开(公告)号：US20110227183A1

公开(公告)日：2011-09-22

申请号：US13116525

申请日：2011-05-26

申请人： Kazuhisa Yamamura ,  Kenichi Sato

发明人： Kazuhisa Yamamura ,  Kenichi Sato

IPC分类号： H01L31/02

CPC分类号： H01L27/1446 ,  H01L27/14 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14636 ,  H01L31/107

摘要： A photodiode array 1 has a plurality of photodetector channels 10 which are formed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 forms a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.

摘要翻译： 光电二极管阵列1具有多个光电检测器通道10，其形成在具有n型半导体层12的n型衬底2上，待检测的光入射到多个光电检测器通道10.光电二极管阵列1 包括：形成在基板2的n型半导体层12上的ap型半导体层13; 电阻器4，每个电阻器4设置在每个光电检测器通道10上，并且在其一端连接到信号导体3; 以及形成在多个光电检测器通道10之间的n型分离部分20.p型半导体层13在衬底2之间的界面处形成pn结，并且包括用于载流子雪崩乘法的多个乘法区域AM 由所检测的光的入射产生，使得每个乘法区域对应于每个光电检测器通道。 分离部20被形成为使得p型半导体层13的每个乘法区域AM对应于每个光电检测器通道10。