公开(公告)号：US4885070A

公开(公告)日：1989-12-05

申请号：US197040

申请日：1988-05-20

申请人： Gregor A. Campbell ,  Robert W. Conn ,  Dan M. Goebel ,  Rolf Adam ,  Hans Aichert ,  Hans Betz ,  Anton Dietrich ,  Gonde Dittmer ,  Klaus Hartig ,  Friedrich Hass ,  Rainer Ludwig ,  Max Mayr ,  Alfred Thelen

发明人： Gregor A. Campbell ,  Robert W. Conn ,  Dan M. Goebel ,  Rolf Adam ,  Hans Aichert ,  Hans Betz ,  Anton Dietrich ,  Gonde Dittmer ,  Klaus Hartig ,  Friedrich Hass ,  Rainer Ludwig ,  Max Mayr ,  Alfred Thelen

IPC分类号： C23C14/00 ,  C23C14/46 ,  H01J37/34

CPC分类号： C23C14/46 ,  C23C14/0036 ,  H01J37/3402

摘要： An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed and guided by magnets toward a target system. Positive ions may be accelerated against the target by applying an adjustable negative voltage.

摘要翻译： 公开了一种将材料施加到设置在真空室中的基板的装置。 包含电子发射器的单独的发生器室通过处理室连接到真空室，使得具有可控横截面形状和大面积的等离子体由磁体形成并被引导到目标系统。 通过施加可调节的负电压，正离子可以相对于目标加速。

公开(公告)号：US6094009A

公开(公告)日：2000-07-25

申请号：US869843

申请日：1997-06-05

申请人： Dan M. Goebel

发明人： Dan M. Goebel

IPC分类号： H01J23/027 ,  H01J25/34

CPC分类号： H01J23/0275 ,  H01J2223/027

摘要： A collector for collecting an electron beam in a traveling wave tube is disclosed. The collector has an input end for receiving the electron beam from the traveling wave tube. The collector also has a plurality of stages biased at given voltages and arranged along a common collector axis and positioned at a different axial position with respect to the input end. A stage is biased more negatively with a voltage than a successive stage positioned axially farther from the input end to generate an electrostatic focusing lens for focusing the electron beam toward successive stages thereby increasing the collection efficiency of the collector.

摘要翻译： 公开了一种用于在行波管中收集电子束的收集器。 集电极具有用于接收来自行波管的电子束的输入端。 收集器还具有多个级，其在给定电压下被偏置并且沿着公共收集器轴线布置并且相对于输入端位于不同的轴向位置。 一个电压比一个电压偏置得比轴向更远离输入端的连续电平产生一个静电聚焦透镜，用于将电子束聚焦到连续的阶段，从而提高集电极的收集效率。

公开(公告)号：US5607509A

公开(公告)日：1997-03-04

申请号：US635527

申请日：1996-04-22

申请人： Robert W. Schumacher ,  Jesse N. Matossian ,  Dan M. Goebel

发明人： Robert W. Schumacher ,  Jesse N. Matossian ,  Dan M. Goebel

IPC分类号： C23C14/48 ,  H01J37/317 ,  H01J37/32 ,  H01L21/265 ,  H01L21/324 ,  C23C16/00

CPC分类号： H01J37/32412

摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.

摘要翻译： 一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中 每个脉冲的最小部分。 在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。 电压脉冲为至少约50kV，优选为100kV以上。 脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。 优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。

公开(公告)号：US5296272A

公开(公告)日：1994-03-22

申请号：US8273

申请日：1993-01-25

申请人： Jesse N. Matossian ,  Dan M. Goebel

发明人： Jesse N. Matossian ,  Dan M. Goebel

IPC分类号： C23C14/48 ,  H01J37/32 ,  B05D3/06 ,  B05D3/02

CPC分类号： H01J37/32688 ,  C23C14/48 ,  H01J37/32412 ,  H01J37/32706

摘要： An object which is to be implemented with ions is enclosed in a container. A plasma is generated in a chamber which is separate from, and opens into the container. The plasma diffuses from the chamber into the container to surround the object with uniform density. High voltage negative pulses are applied to the object, causing the ions to be accelerated from the plasma toward, and be implanted into, the object. Line-of-sight communication between a plasma generation source located in the chamber and the object is blocked, thereby eliminating undesirable effects including heating of the object by the source and transfer of thermally discharged material from the source to the object. Two or more chambers may be provided for generating independent plasmas of different ion species which diffuse into and uniformly mix in the container. The attributes of the different plasmas may be individually selected and controlled in the respective chambers.

摘要翻译： 要用离子实施的物体被封闭在容器中。 在与容器分离并向容器开放的室中产生等离子体。 等离子体从腔室扩散到容器中以围绕物体均匀密度。 将高电压负脉冲施加到物体上，使离子从等离子体加速并被注入到物体中。 位于室内的等离子体发生源与物体之间的视线通信被阻挡，从而消除不期望的影响，包括由源引起的物体的加热和将热排出的材料从源传送到物体。 可以提供两个或更多个室以产生扩散到容器中并均匀混合在容器中的不同离子种类的独立等离子体。 不同等离子体的属性可以在相应的室中单独选择和控制。

公开(公告)号：US5212425A

公开(公告)日：1993-05-18

申请号：US595122

申请日：1990-10-10

申请人： Dan M. Goebel ,  Jesse N. Matossian

发明人： Dan M. Goebel ,  Jesse N. Matossian

IPC分类号： C23C14/48 ,  H01J37/317 ,  H01J37/32 ,  H01L21/265

CPC分类号： H01J37/32697 ,  C23C14/48 ,  H01J37/3171 ,  H01J37/32 ,  H01J37/32412 ,  H01J37/32422

摘要： A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a plasma source ion implantation apparatus. The periodic discharge results in the application of high voltage negative pulses to the object, causing ions from the plasma to be accelerated toward, and implanted into the object. A pulse transformer is preferably provided between the plasma switch and capacitor, and the object to step up the voltage of the pulses and enable the plasma switch to operate at lower voltage levels. The plasma switch enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry to prevent arcing between the object and plasma. A second power source, capacitor, and plasma switch may be provided to apply positive pulses to the object in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object for performing thermally assisted ion implantation, surface annealing, and the like.

公开(公告)号：US5932971A

公开(公告)日：1999-08-03

申请号：US869841

申请日：1997-06-05

申请人： Dan M. Goebel ,  Edward A. Adler

发明人： Dan M. Goebel ,  Edward A. Adler

IPC分类号： H01J23/087 ,  H01J25/38 ,  H01J25/34

CPC分类号： H01J25/38 ,  H01J23/0873 ,  H01J2223/087

摘要： A traveling wave tube and method of operation is disclosed. The traveling wave tube includes a slow wave structure such as a helix member provided with input and output ends and located within a tube member. An electron gun assembly is adjacent the input end for injecting electrons as an electron beam along an axial path through the helix member. A magnetic focusing device generates a magnetic field having a given strength to confine the beam to the axial path. The given strength of the magnetic field is sufficient to confine the beam only when the power level of the microwave input signal is selected such that the given power level of the microwave output signal is at least 6 dB lower than the power level of the microwave output signal at saturation. Boron Nitride (BN) supporting rods are engaged between the tube and helix members for supporting and transferring heat away from the helix member.

摘要翻译： 公开了一种行波管及其操作方法。 行波管包括慢波结构，例如设置有输入和输出端并位于管构件内的螺旋构件。 电子枪组件靠近输入端，用于沿着通过螺旋构件的轴向路径注入电子作为电子束。 磁聚焦装置产生具有给定强度的磁场以将光束限制在轴向路径上。 只有当微波输入信号的功率电平被选择使得微波输出信号的给定功率电平比微波输出的功率电平低至少6dB时，磁场的给定强度才足以限制光束 饱和信号。 氮化硼（BN）支撑杆接合在管和螺旋构件之间，用于支撑和传递远离螺旋构件的热量。

公开(公告)号：US5656141A

公开(公告)日：1997-08-12

申请号：US607273

申请日：1996-02-20

申请人： Hans-Georg Betz ,  Gregor A. Campbell ,  Robert W. Conn ,  Karl Matl ,  Peter Sommerkamp ,  Alfons Zoeller ,  Dan M. Goebel

发明人： Hans-Georg Betz ,  Gregor A. Campbell ,  Robert W. Conn ,  Karl Matl ,  Peter Sommerkamp ,  Alfons Zoeller ,  Dan M. Goebel

IPC分类号： C23C14/32 ,  C23C14/50 ,  H01J37/32 ,  C23C16/50

CPC分类号： H01J37/32422 ,  C23C14/32 ,  C23C14/50 ,  C23C14/505 ,  H01J37/32027 ,  H01J37/3266 ,  H01J2237/3137

摘要： Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31", . . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31" . . . . A second plasma 60 is generated between the crucible 45 of the electron beam evaporator 37 and the anode tube 38 of the plasma source 29 by applying a potential difference between the plasma source 29 and the vacuum chamber 2.

摘要翻译： 用于涂覆基底31,31“的装置。 。 。 在包括设置在其中的基板载体30的真空室2和用于产生第一等离子体云28的装置29中，还包括将等离子体云28引导到基板31,31“的表面上的磁体26,27。 。 。 其中用于产生等离子体云28的装置具有选择发射器11和下游管状阳极38，阳极具有用于工艺气体点燃等离子体的入口10，此外，该装置设置有用于引导的磁体4,7 并且将等离子体通过阳极管38引导到处理室43中，并且包括用于产生用于在基板31,31“上产生层的材料的原子，分子或簇的装置。 。 。 ，优选电子束蒸发器37，可以将蒸发的或溅射的材料33直接施加到基板31,31“上。 。 。 。 通过施加等离子体源29和真空室2之间的电位差，在电子束蒸发器37的坩埚45和等离子体源29的阳极管38之间产生第二等离子体60。

公开(公告)号：US5537005A

公开(公告)日：1996-07-16

申请号：US242569

申请日：1994-05-13

申请人： Dan M. Goebel ,  Robert W. Schumacher

发明人： Dan M. Goebel ,  Robert W. Schumacher

IPC分类号： H01J3/02 ,  H01J27/02

CPC分类号： H01J3/025

摘要： Plasma-cathode electron gun structures capable of operation in low-pressure, e.g.,

摘要翻译： 公开了能够在低压例如<5×10 -3 Torr的可电离气体环境中操作的等离子体 - 阴极电子枪结构。 它们利用限定等离子体面的部分透明电极在外壳内使用热电子发射器。 间隔阳极设置在电极附近以从等离子体表面提取电子束。 磁系统形成向内定向的场，并且等离子体电子的一部分被引导通过该场以提高电离效率。

公开(公告)号：US5329205A

公开(公告)日：1994-07-12

申请号：US901353

申请日：1992-06-19

申请人： Dan M. Goebel ,  Robert L. Poeschel ,  Ronnie M. Watkins

发明人： Dan M. Goebel ,  Robert L. Poeschel ,  Ronnie M. Watkins

IPC分类号： H01J17/06 ,  H01J17/44 ,  H01J7/24

CPC分类号： H01J17/44 ,  H01J17/066

摘要： A CROSSATRON switch is capable of operating with voltages in excess of 100 kV by the use of a deuterium gas fill to increase the Paschen breakdown voltage, axial molybdenum cathode corrugations to provide a higher current capability, and a Paschen shield that is formed from molybdenum. The terminal curvature of the Paschen shield and of the adjacent portion of the anode are selected to establish a voltage stress at the curved Paschen shield surface within the approximate range of 90-150 kV/cm in response to a 100 kV differential.

摘要翻译： CROSSATRON开关能够通过使用氘气填充来操作超过100kV的电压，以增加Paschen击穿电压，轴向钼阴极波纹以提供更高的电流能力，以及由钼形成的Paschen屏蔽。 选择Paschen屏蔽件和阳极相邻部分的端子曲率，以响应于100kV差分在90-150kV / cm的近似范围内在弯曲的Paschen屏蔽表面处建立电压应力。

公开(公告)号：US5218179A

公开(公告)日：1993-06-08

申请号：US749013

申请日：1991-08-23

申请人： Jesse N. Matossian ,  Dan M. Goebel

发明人： Jesse N. Matossian ,  Dan M. Goebel

IPC分类号： C23C14/48 ,  H01J37/32

CPC分类号： H01J37/32688 ,  C23C14/48 ,  H01J37/32412 ,  H01J37/32706

摘要： An object (14) which is to be implanted with ions is enclosed in a container (12). A plasma (44) is generated in a chamber (26) which is separate from, and opens into the container (12). The plasma diffuses from the chamber (26) into the container (12) to surround the object (14) with uniform density. High voltage negative pulses are applied to the object (14), causing the ions to be accelerated from the plasma (44) toward, and be implanted into, the object (14). Line-of-sight communication between a plasma generation source (30) located in the chamber (26) and the object (14) is blocked, thereby eliminating undesirable effects including heating of the object (14) by the source (30) and transfer of thermally discharged material from the source (30) to the object (14). Two or more chambers (26,34) may be provided for generating independent plasmas (44,46) of different ion species which diffuse into and uniformly mix in the container (12). The attributes of the different plasmas (44,46) may be individually selected and controlled in the respective chambers (26,34).

摘要翻译： 要注入离子的物体（14）封闭在容器（12）中。 在与容器（12）分离并向容器（12）开口的室（26）中产生等离子体（44）。 等离子体从室（26）扩散到容器（12）中以围绕物体（14）以均匀的密度扩散。 将高电压负脉冲施加到物体（14）上，使离子从等离子体（44）加速朝向物体（14）并被植入物体（14）。 位于室（26）中的等离子体产生源（30）和物体（14）之间的视线通信被阻挡，从而消除不期望的影响，包括通过源（30）加热物体（14）并传送 从所述源（30）到所述物体（14）的热排出材料。 可以提供两个或更多个腔室（26,34），用于产生不同离子种类的独立等离子体（44,46），这些等离子体扩散到容器（12）中并均匀地混合在容器（12）中。 不同等离子体（44,46）的属性可以在相应的腔室（26,34）中单独选择和控制。