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    Tunable dielectric radio frequency microelectromechanical system capacitive switch
    4.
    发明申请
    Tunable dielectric radio frequency microelectromechanical system capacitive switch 有权
    可调介质射频微机电系统电容开关

    公开(公告)号：US20060208823A1

    公开(公告)日：2006-09-21

    申请号：US11374815

    申请日：2006-03-14

    申请人： Andrew Hunt ,  Ioannis Papapolymerou ,  Todd Polley ,  Guoan Wang

    发明人： Andrew Hunt ,  Ioannis Papapolymerou ,  Todd Polley ,  Guoan Wang

    IPC分类号： H01P5/04

    CPC分类号： H01G7/06 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2001/0052

    摘要： The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.

    摘要翻译： 本发明是在接触界面处用BST电介质开发的可调谐RF MEMS开关。 BST具有非常高的介电常数（> 300），使其对RF MEMS电容开关非常有吸引力。 BST的可调谐介电常数提供了线性可调MEMS电容开关的可能性。 公开了具有BST电介质的电容可调谐RF MEMS开关，其显示其高达40GHz的特性和特性。

    Microstrip line structures with alternating wide and narrow portions having different thicknesses relative to ground, method of manufacture and design structures
    5.
    发明授权
    Microstrip line structures with alternating wide and narrow portions having different thicknesses relative to ground, method of manufacture and design structures 有权
    具有相对于地面具有不同厚度的交替宽和窄部分的微带线结构，制造方法和设计结构

    公开(公告)号：US08766748B2

    公开(公告)日：2014-07-01

    申请号：US12960009

    申请日：2010-12-03

    申请人： Essam Mina ,  Guoan Wang ,  Wayne H. Woods, Jr.

    发明人： Essam Mina ,  Guoan Wang ,  Wayne H. Woods, Jr.

    IPC分类号： H01P3/08 ,  H01P9/00

    CPC分类号： H01P3/081 ,  H01P3/003 ,  H01P9/00

    摘要： On-chip high performance slow-wave microstrip line structures, methods of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and a signal layer provided in a different plane than the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness such that a height of the wide portion is different than a height of the narrow portion with respect to the at least one ground.

    摘要翻译： 本文提供片上高性能慢波微带线结构，集成电路的制造方法和设计结构。 该结构包括设置在与至少一个地面不同的平面中的至少一个地面和信号层。 信号层具有至少一个交替宽的部分和具有交替厚度的窄部分，使得宽部分的高度不同于窄部分相对于至少一个地面的高度。

    SOLUTIONS FOR ON-CHIP MODELING OF OPEN TERMINATION OF FRINGE CAPACITANCE
    6.
    发明申请
    SOLUTIONS FOR ON-CHIP MODELING OF OPEN TERMINATION OF FRINGE CAPACITANCE 有权
    用于片上电容开机终止的芯片建模解决方案

    公开(公告)号：US20120317530A1

    公开(公告)日：2012-12-13

    申请号：US13158562

    申请日：2011-06-13

    申请人： Michael P. Keene ,  Guoan Wang ,  Wayne H. Woods, JR. ,  Jiansheng Xu

    发明人： Michael P. Keene ,  Guoan Wang ,  Wayne H. Woods, JR. ,  Jiansheng Xu

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036 ,  G06F17/5081

    摘要： A computer-implemented method of generating a library object for an integrated circuit design is disclosed. In one embodiment, the method includes: analyzing a pair of integrated circuit design objects for fringe capacitance effects between the pair of integrated circuit design objects; and generating the library object accounting for the fringe capacitance effects prior to completion of a layout design for the integrated circuit design.

    摘要翻译： 公开了一种用于生成用于集成电路设计的库对象的计算机实现的方法。 在一个实施例中，该方法包括：分析一对集成电路设计对象，用于一对集成电路设计对象之间的边缘电容效应; 并在完成集成电路设计的布局设计之前生成考虑到边缘电容效应的库对象。

    ON-CHIP HIGH PERFORMANCE SLOW-WAVE MICROSTRIP LINE STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES
    7.
    发明申请
    ON-CHIP HIGH PERFORMANCE SLOW-WAVE MICROSTRIP LINE STRUCTURES, METHODS OF MANUFACTURE AND DESIGN STRUCTURES 有权
    片上高性能慢波微波线结构，制造方法和设计结构

    公开(公告)号：US20120139668A1

    公开(公告)日：2012-06-07

    申请号：US12960009

    申请日：2010-12-03

    申请人： Essam MINA ,  Guoan Wang ,  Wayne H. Woods, JR.

    发明人： Essam MINA ,  Guoan Wang ,  Wayne H. Woods, JR.

    IPC分类号： H01P3/08

    CPC分类号： H01P3/081 ,  H01P3/003 ,  H01P9/00

    摘要： On-chip high performance slow-wave microstrip line structures, methods of manufacture and design structures for integrated circuits are provided herein. The structure includes at least one ground and a signal layer provided in a different plane than the at least one ground. The signal layer has at least one alternating wide portion and narrow portion with an alternating thickness such that a height of the wide portion is different than a height of the narrow portion with respect to the at least one ground.

    摘要翻译： 本文提供片上高性能慢波微带线结构，集成电路的制造方法和设计结构。 该结构包括设置在与至少一个地面不同的平面中的至少一个地面和信号层。 信号层具有至少一个交替宽的部分和具有交替厚度的窄部分，使得宽部分的高度不同于窄部分相对于至少一个地面的高度。

    On chip slow-wave structure, method of manufacture and design structure
    8.
    发明授权
    On chip slow-wave structure, method of manufacture and design structure 有权
    片上慢波结构，制造方法和设计结构

    公开(公告)号：US08130059B2

    公开(公告)日：2012-03-06

    申请号：US12423835

    申请日：2009-04-15

    申请人： Guoan Wang ,  Wayne H. Woods, Jr.

    发明人： Guoan Wang ,  Wayne H. Woods, Jr.

    IPC分类号： H01P1/18

    CPC分类号： H01P9/00

    摘要： An on-chip slow-wave structure that uses multiple parallel signal paths with grounded capacitance structures, method of manufacturing and design structure thereof is provided. The slow wave structure includes a plurality of conductor signal paths arranged in a substantial parallel arrangement. The structure further includes a first grounded capacitance line or lines positioned below the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A second grounded capacitance line or lines is positioned above the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A grounded plane grounds the first and second grounded capacitance line or lines.

    摘要翻译： 提供了采用具有接地电容结构的多个并行信号路径的片上慢波结构，其制造方法和设计结构。 慢波结构包括以大致平行布置布置的多个导体信号路径。 该结构还包括位于多个导体信号路径下方并且基本上正交于多个导体信号路径布置的第一接地电容线或线。 第二接地电容线或线路位于多个导体信号路径上方并且基本上正交于多个导体信号路径布置。 接地平面接地第一和第二接地电容线或线路。

    Circuit structure and design structure for an optionally switchable on-chip slow wave transmission line band-stop filter and a method of manufacture
    9.
    发明授权
    Circuit structure and design structure for an optionally switchable on-chip slow wave transmission line band-stop filter and a method of manufacture 有权
    用于可选择切换的片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法

    公开(公告)号：US08106728B2

    公开(公告)日：2012-01-31

    申请号：US12424110

    申请日：2009-04-15

    申请人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, Jr.

    发明人： Hanyi Ding ,  Kwan H. Lam ,  Guoan Wang ,  Wayne H. Woods, Jr.

    IPC分类号： H01P3/08 ,  H01P1/203

    CPC分类号： H01P1/203 ,  Y10T29/49155

    摘要： The present invention generally relates to a circuit structure, design structure and method of manufacturing a circuit, and more specifically to a circuit structure and design structure for an on-chip slow wave transmission line band-stop filter and a method of manufacture. A structure includes an on-chip transmission line stub comprising a conditionally floating structure structured to provide increased capacitance to the on-chip transmission line stub when the conditionally floating structure is connected to ground.

    摘要翻译： 本发明一般涉及一种电路结构，电路制造的设计结构和方法，更具体地涉及用于片上慢波传输线带阻滤波器的电路结构和设计结构以及制造方法。 一种结构包括片上传输线短截线，其包括有条件浮动结构，其被构造为当有条件浮动结构连接到地时为片上传输线短截线提供增加的电容。

    Coplanar waveguide integrated circuits having arrays of shield conductors connected by bridging conductors
    10.
    发明授权
    Coplanar waveguide integrated circuits having arrays of shield conductors connected by bridging conductors 有权
    具有通过桥接导体连接的屏蔽导体阵列的共面波导集成电路

    公开(公告)号：US07812694B2

    公开(公告)日：2010-10-12

    申请号：US12061950

    申请日：2008-04-03

    申请人： Hanyi Ding ,  Essam F. Mina ,  Guoan Wang ,  Wayne H. Woods

    发明人： Hanyi Ding ,  Essam F. Mina ,  Guoan Wang ,  Wayne H. Woods

    IPC分类号： H01P3/08

    CPC分类号： H01P3/003

    摘要： Coplanar waveguide structures and design structures for radiofrequency and microwave integrated circuits. The coplanar waveguide structure includes a signal conductor and ground conductors generally coplanar with the signal conductor. The signal conductor is disposed between upper and lower arrays of substantially parallel shield conductors. Conductive bridges, which are electrically isolated from the signal conductor, are located laterally between the signal conductor and each of the ground conductors. Pairs of the conductive bridges connect one of the shield conductors in the first array with one of the shield conductors in the second array to define closed loops encircling the signal line.

    摘要翻译： 射频和微波集成电路的共面波导结构和设计结构。 共面波导结构包括信号导体和与信号导体大致共面的接地导体。 信号导体设置在基本上平行的屏蔽导体的上和下阵列之间。 与信号导体电隔离的导电桥横向位于信号导体和每个接地导体之间。 一对导电桥将第一阵列中的一个屏蔽导体与第二阵列中的一个屏蔽导体连接，以限定围绕信号线的闭环。