公开(公告)号：US20050083726A1

公开(公告)日：2005-04-21

申请号：US10974366

申请日：2004-10-26

申请人： Daniel Auclair ,  Jeffrey Craig ,  John Mangan ,  Robert Norman ,  Daniel Guterman ,  Sanjay Mehrotra

发明人： Daniel Auclair ,  Jeffrey Craig ,  John Mangan ,  Robert Norman ,  Daniel Guterman ,  Sanjay Mehrotra

IPC分类号： G06F11/10 ,  G11C16/10 ,  G11C29/50 ,  G11C29/52 ,  G11C11/00

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US20050058008A1

公开(公告)日：2005-03-17

申请号：US10917870

申请日：2004-08-13

申请人： Daniel Auclair ,  Jeffrey Craig ,  John Mangan ,  Robert Norman ,  Daniel Guterman ,  Sanjay Mehrotra

发明人： Daniel Auclair ,  Jeffrey Craig ,  John Mangan ,  Robert Norman ,  Daniel Guterman ,  Sanjay Mehrotra

IPC分类号： G06F11/10 ,  G11C16/10 ,  G11C29/50 ,  G11C29/52 ,  G11C7/00

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US6049899A

公开(公告)日：2000-04-11

申请号：US113800

申请日：1998-07-08

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G06F11/10 ,  G11C16/10 ,  G11C29/50 ,  G11C29/52 ,  H03M13/00

CPC分类号： G11C29/028 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

公开(公告)号：US07437631B2

公开(公告)日：2008-10-14

申请号：US10917870

申请日：2004-08-13

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G11C29/00

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US20100020616A1

公开(公告)日：2010-01-28

申请号：US12572098

申请日：2009-10-01

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G11C16/04

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US07548461B2

公开(公告)日：2009-06-16

申请号：US10874825

申请日：2004-06-22

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G11C11/34

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

公开(公告)号：US07616484B2

公开(公告)日：2009-11-10

申请号：US10974366

申请日：2004-10-26

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G11C16/06 ,  G11C16/04 ,  G11C29/00 ,  G08C25/00

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US07839685B2

公开(公告)日：2010-11-23

申请号：US12572098

申请日：2009-10-01

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C29/028 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US5657332A

公开(公告)日：1997-08-12

申请号：US406677

申请日：1995-03-20

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G06F11/10 ,  G11C16/10 ,  G11C29/50 ,  G11C29/52 ,  G11C29/00 ,  G11C11/34

CPC分类号： G11C29/028 ,  G11C16/10 ,  G11C16/3431 ,  G11C29/50 ,  G11C29/50004 ,  G11C29/52 ,  G06F11/1068 ,  G06F11/1072 ,  G06F2201/81 ,  G11C16/04 ,  G11C2029/5004 ,  G11C2029/5006

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.

摘要翻译： 正常使用固态存储器（如EEP​​ROM或闪存EEPROM）时会发生软错误。 存储器单元的编程阈值电压从原来的预期电平漂移导致软错误。 在正常读取期间，最初不容易检测到该误差，直到累积漂移变得如此严重以致其发展为硬错误。 数据可能会丢失，如果这些硬错误足够的可以在存储器中发出可用的纠错码。 一种存储器件及其技术能够在整个使用存储器件的过程中检测这些漂移并且将每个存储器单元的阈值电压基本上保持在其预期的水平，从而抵抗将软错误发展成硬错误。

公开(公告)号：US5532962A

公开(公告)日：1996-07-02

申请号：US408109

申请日：1995-03-21

申请人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

发明人： Daniel L. Auclair ,  Jeffrey Craig ,  John S. Mangan ,  Robert D. Norman ,  Daniel C. Guterman ,  Sanjay Mehrotra

IPC分类号： G06F11/10 ,  G11C16/34 ,  G11C29/50 ,  G11C29/00

CPC分类号： G06F11/1008 ,  G11C16/3418 ,  G11C16/3431 ,  G11C16/3436 ,  G11C16/3445 ,  G11C16/3459 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50004 ,  G06F2201/81 ,  G11C16/04

摘要： Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.