摘要:
The present invention provides methods of preventing, treating or ameliorating one or more symptoms of disorders in which modulation of a subject's immune system is beneficial utilizing a lymphoid tissue inducing agent and an immunomodulatory agent. In particular, the present invention provides methods of preventing, treating or ameliorating a proliferative disorder, an infectious disease, a cardiovascular disease, an autoimmune disorder, or an inflammatory disorder or one or more symptoms thereof comprising administering to a subject in need thereof one or more lymphoid tissue inducing agents and one or immunomodulatory agents. The present invention also provides compositions and articles of manufacture for use in preventing, treating or ameliorating one or more symptoms associated with disorders in which modulation of a subject's immune system is beneficial, including, but not limited to proliferative disorders, infectious diseases, cardiovascular diseases, autoimmune disorders and inflammatory disorders. The present invention further provides methods for screening and identifying lymphoid tissue inducing agents and/or immunomodulatory agents.
摘要:
This invention relates to novel substituted phenylamino-benzene compounds, pharmaceutical compositions containing such compounds and the use of those compounds or compositions for treating hyper-proliferative and/or angiogenesis disorders, as a sole agent or in combination with other active ingredients.
摘要:
The invention includes novel human periostin polypeptides and DNAs encoding them. Also embraced by the invention are human periostin specific antibodies, diagnostic assays for metastasis of breast cancer to bone, and preeclempsia.
摘要:
Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.
摘要:
This invention relates to novel substituted phenylamino-benzene compounds, pharmaceutical compositions containing such compounds and the use of those compounds or compositions for treating hyper-proliferative and/or angiogenesis disorders, as a sole agent or in combination with other active ingredients.
摘要:
A polypeptide capable of conferring multidrug-resistance on a cell is disclosed. Also disclosed are nucleic acids encoding the polypeptide, expression vectors, trasformant host cell lines expressing the polypeptide, and antibodies binding to the polypeptide. Screening, diagnostic and treatment methods using the above polypeptide, nucleic acids, antibodies and host cell lines are also within the scope of this invention.
摘要:
A nucleic acid capable of driving the expression of a reporter gene in a cancer cell line is disclosed. A polypeptide able to confer multidrug-resistance on a cell is disclosed. Also disclosed are nucleic acids encoding the polypeptide, expression vectors, transformant host cell lines expressing the polypeptide, and antibodies binding to the polypeptide. Screening, diagnostic and treatment methods using the above polypeptide, nucleic acids, antibodies and host cell lines are also within the scope of this invention.
摘要:
The invention includes novel human periostin polypeptides and DNAs encoding them. Also embraced by the invention are human periostin specific antibodies, diagnostic assays for metastasis of breast cancer to bone, and preeclempsia.
摘要:
Soft errors occur during normal use of a solid-state memory such as EEPROM or Flash EEPROM. A soft error results from the programmed threshold voltage of a memory cell being drifted from its originally intended level. The error is initially not readily detected during normal read until the cumulative drift becomes so severe that it develops into a hard error. Data could be lost if enough of these hard errors swamps available error correction codes in the memory. A memory device and techniques therefor are capable of detecting these drifts and substantially maintaining the threshold voltage of each memory cell to its intended level throughout the use of the memory device, thereby resisting the development of soft errors into hard errors.