Abstract:
A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
Abstract:
A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
Abstract:
A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
Abstract:
A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
Abstract:
A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.
Abstract:
A portable phone includes a handset and a data projection system configured to form a visual image of data, such as caller waiting ID data, on a viewing surface viewable by a user during a two way conversation. The handset also includes a speaker, a microphone, conventional phone circuitry and a keyboard. The data projection system is configured to receive signals from the phone circuitry, to generate a pattern representative of the data, to process the pattern into a mirror image of the visual image, and to project the mirror image from a bottom end surface of the handset. The projection system includes an electro optic system for generating the pattern, and an optics system for projecting the mirror image onto the viewing surface. A method for projecting data in a portable phone includes the steps of: providing the handset with the data projection system, conducting a two way conversation with the handset held against the head of the user, and forming the visual image on the viewing surface during the two way conversation with the handset held against the head. The method can also include the steps of manipulating the handset and a body part to locate and focus the visual image, sensing an orientation of the handset during the two way conversation, and orienting the visual image as a function of the sensing step.
Abstract:
A method for controlling a field emission display to reduce emission to grid during turn on and turn off is provided. A field emission display (FED) includes emitter sites formed on a baseplate; a grid for controlling electron emission from the emitter sites; a display screen for collecting electrons to form an image and a power supply. In order to reduce emission to grid during turn on, the display screen is enabled by the power supply prior to enabling of the emitter sites. An anode-baseplate voltage differential is thus established prior to electron emission. For turn on, the method includes varying the capacitances of the control circuits for the display screen and grid such that a time constant (RC) for the grid is larger than a time constant (RC) for the display screen. Alternately the method of the invention can be implemented during turn on using software, using time delay circuit components, or using an emitter site control circuit to control electron flow to the emitter sites. During turn off, the electron emission and anode-baseplate voltage differential are eliminated while a path to ground is provided for the grid.
Abstract:
A method for evacuating and sealing a field emission display package is provided. The method includes forming a cover plate, a backplate, and a peripheral seal therebetween. The backplate is formed as a sub-assembly which includes a seal ring and a getter material. The seal ring includes compressible protrusions for initially separating the cover plate from the seal ring to provide evacuation openings. During a sealing and evacuation process the packages are placed in the reaction chamber of a furnace. The pressure in the reaction chamber is then reduced and the temperature is increased in a staged sequence. During the evacuating and sealing process the evacuation openings formed by the compressible protrusions provide a flow path for evacuation. As the sealing and evacuation process continues, the compressible protrusions and seal ring flow and commingle to form the peripheral seal. At the same time the getter material is activated and pumps contaminants from the sealed spaced formed within the package.
Abstract:
The subject invention is directed to a process for etching a semiconductor device to form a predetermined etched pattern therein. The semiconductor device which is provided herein typically has a plurality of layers. At least one of these layers comprises a metal-containing material having a metal content of at least about 80% by weight. Etching the semiconductor device with an etchant material forms a predetermined etched pattern therein. This pattern includes the formation of horizontal and upright sidewalls in the etched layers which comprise the metal-containing material. Thus, each of the upright sidewalls has a profile which is either substantially vertically sloped or is positively sloped. This is the case even though the chemical etchant composition, when employed by itself to etch the above-described metal-containing layers, forms sidewall profiles which are substantially negatively sloped configuration. The etchant material employed herein comprises a chemical etchant composition and a coating composition. In one preferred form of this invention the coating composition comprises a gaseous oxide of carbon, particularly carbon monoxide or carbon dioxide, and a silicon-containing compound, respectively. The etchant material is in a substantially gas phase during the etching of the semiconductor device and deposits a protective film on the upright sidewalls of the etched semiconductor device. The silicon-containing compound typically comprises a silicon tetrahalide, preferably comprising SiCl.sub.4, SiBr.sub.4, or SiF.sub.4. However, the most preferred compound being SiCl.sub.4.
Abstract:
A high resistance resistor for regulating current in a field emission display is integrated into circuitry of the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).