公开(公告)号：US06479821B1

公开(公告)日：2002-11-12

申请号：US09659094

申请日：2000-09-11

申请人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  David A. Markle ,  Michael O. Thompson

发明人： Andrew M. Hawryluk ,  Somit Talwar ,  Yun Wang ,  David A. Markle ,  Michael O. Thompson

IPC分类号： G03G516

CPC分类号： H01L21/268 ,  G03G5/16

摘要： A method, apparatus and system for controlling the amount of heat transferred to a process region (30) of a workpiece (W) from exposure with a pulse of radiation (10), which may be in the form of a scanning beam (B), using a thermally induced phase switch layer (60). The apparatus of the invention is a film stack (6) having an absorber layer (50) deposited atop the workpiece, such as a silicon wafer. A portion of the absorber layer covers the process region. The absorber layer absorbs radiation and converts the absorbed radiation into heat. The phase switch layer is deposited above or below the absorber layer. The phase switch layer may comprise one or more thin film layers, and may include a thermal insulator layer and a phase transition layer. Because they are in close proximity, the portion of the phase switch layer covering the process region has a temperature that is close to the temperature of the process region. The phase of the phase switch layer changes from a first phase (e.g., solid) to a second phase (e.g., liquid or vapor) at a phase transition temperature (TP). During this phase change, the phase switch layer absorbs heat but does not significantly change temperature. This limits the temperature of the absorber layer and the process region since both are close to the phase change layer.

摘要翻译： 一种用于控制从辐射脉冲（10）暴露于工件（W）的处理区域（30）的热量的方法，装置和系统，其可以是扫描光束（B）的形式， ，使用热感应相位层（60）。 本发明的装置是具有沉积在工件上方的诸如硅晶片的吸收层（50）的薄膜叠层（6）。 吸收层的一部分覆盖工艺区域。 吸收层吸收辐射并将吸收的辐射转化成热。 相位开关层沉积在吸收层的上方或下方。 相位开关层可以包括一个或多个薄膜层，并且可以包括绝热层和相变层。 由于它们非常接近，覆盖处理区域的相位开关层的部分具有接近处理区域的温度的温度。 在相转变温度（TP）下，相位开关层的相位从第一相（例如，固体）变为第二相（例如，液体或蒸气）。 在该相变期间，相开关层吸热，但不会明显改变温度。 这限制了吸收层和工艺区域的温度，因为它们都接近于相变层。

公开(公告)号：US06825101B1

公开(公告)日：2004-11-30

申请号：US09536927

申请日：2000-03-27

申请人： Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

发明人： Andrew M. Hawryluk ,  David A. Markle ,  Somit Talwar

IPC分类号： H01L2120

CPC分类号： H01L21/324 ,  H01J2237/316 ,  H01L21/263 ,  H01L21/2636 ,  H01L21/265 ,  H01L21/26506 ,  H01L21/26513

摘要： A method of this invention includes annealing at least one region of a substrate with a short pulse of particles. The particles can be electrons, protons, alpha particles, other atomic or molecular ions or neutral atoms and molecules. The substrate can be composed of a semiconductor material, for example. The particles can include dopant atoms such as p-type dopant atoms such as boron (B), aluminum (Al), gallium (Ga), or indium (In), and n-type dopant atomic species including arsenic (As), phosphorus (P), or antimony (Sb). The particles can also include silicon (Si) or germanium (Ge) atoms or ionized gas atoms including those of hydrogen (He), oxygen (O), nitrogen (N), neon (Ne), argon (Ar), or krypton (Kr). The particles can be used to anneal dopant atoms previously implanted into the substrate. Alternatively, the particle species can be chosen to include the desired implant dopant, the energy of the particle may be chosen to achieve the desired implant depth, and the energy, dose and pulse duration may be chosen to anneal the implanted region during the pulse. This embodiment of the method performs implantation and activation in a single step. If no change in the electrical state of the substrate is required, the particles can include silicon (Si), and germanium (Ge) atoms.

摘要翻译： 本发明的方法包括用短脉冲的颗粒退火衬底的至少一个区域。 颗粒可以是电子，质子，α粒子，其他原子或分子离子或中性原子和分子。 例如，基板可以由半导体材料构成。 颗粒可以包括诸如硼（B），铝（Al），镓（Ga）或铟（In）的p型掺杂剂原子的掺杂剂原子，以及包括砷（As），磷 （P）或锑（Sb）。 这些颗粒还可以包括硅（Si）或锗（Ge）原子或包括氢（He），氧（O），氮（N），氖（Ne），氩（Ar）或氪 Kr）。 颗粒可以用于退火以前植入衬底中的掺杂剂原子。 或者，可以选择粒子物种以包括所需的注入掺杂剂，可以选择粒子的能量以实现期望的注入深度，并且可以选择能量，剂量和脉冲持续时间以在脉冲期间退火注入区域。 该方法的该实施例在单个步骤中执行植入和激活。 如果不需要基板的电气状态的变化，则颗粒可以包括硅（Si）和锗（Ge）原子。

公开(公告)号：US06326219B2

公开(公告)日：2001-12-04

申请号：US09286492

申请日：1999-04-05

申请人： David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

发明人： David A. Markle ,  Somit Talwar ,  Andrew M. Hawryluk

IPC分类号： H01L2100

CPC分类号： H01L29/66575 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/28079 ,  H01L21/324

摘要： The invention is directed to methods for determining the wavelength, pulse length and other important characteristics of radiant energy used to anneal or to activate the source and drain regions of an integrated transistor device which has been doped through implantation of dopant ions, for example. In general, the radiant energy pulse is determined to have a wavelength from 450 to 900 nanometers, a pulse length of 0.1 to 50 nanoseconds, and an exposure energy dose of from 0.1 to 1.0 Joules per square centimeter. A radiant energy pulse of the determined wavelength, pulse length and energy dose is directed onto the source and drain regions to trigger activation. In cases where the doped region has been rendered amorphous, activation requires crystallization using the crystal structure at the boundaries as a seed. In this case the radiant energy pulse causes the source and drain regions to crystallize with the same crystallographic orientation as the underlying substrate with the dopant ions incorporated into the crystalline lattice so that the source and drain regions are activated. To enhance absorption of the radiant energy used for annealing the doped regions, an anti-reflective layer can be formed over the doped regions before exposure. The radiant energy can be generated by a laser or other relatively intense, pulsed, radiant energy source. Selection of the source should be based on efficiency, the ability to distribute energy uniformly over an extended area and the ability to accurately control the energy content of a single pulse.

摘要翻译： 本发明涉及用于确定用于退火或激活已经通过注入掺杂剂离子掺杂的集成晶体管器件的源极和漏极区域的辐射能的波长，脉冲长度和其它重要特性的方法。 通常，辐射能脉冲被确定为具有450-900纳米的波长，0.1至50纳秒的脉冲长度和0.1至1.0焦耳/平方厘米的曝光能量。 所确定的波长，脉冲长度和能量剂量的辐射能量脉冲被引导到源极和漏极区域以触发激活。 在掺杂区域变为无定形的情况下，活化需要使用边界处的晶体结构作为晶种进行结晶。 在这种情况下，辐射能量脉冲导致源极和漏极区域以与底部衬底相同的晶体取向结晶，掺杂剂离子结合到晶格中，使得源极和漏极区域被激活。 为了增强用于退火掺杂区域的辐射能的吸收，可以在曝光之前在掺杂区域上形成抗反射层。 辐射能可以由激光或其他相对强烈的脉冲辐射能源产生。 源的选择应基于效率，均匀分布在扩展区域上的能力以及准确控制单脉冲能量含量的能力。

公开(公告)号：US07731798B2

公开(公告)日：2010-06-08

申请号：US11001954

申请日：2004-12-01

申请人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

发明人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

IPC分类号： C23C16/00

CPC分类号： B23K26/703

摘要： A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam. Thus, heat from the laser is transferred from the wafer to the heat sink via the heater module and the insulator layer. In the absence of any laser heating, heat is also transferred from the heater module to the wafer as needed to maintain the constant background temperature.

摘要翻译： 公开了一种用于在激光热处理（LTP）期间支撑晶片并在晶片上保持恒定背景温度的卡盘。 卡盘包括散热器和加热器模块形式的热质量。 加热器模块与散热器热连通，但是通过绝热层在物理上与其分离。 热绝缘体保持至少等于由激光器传递的最大功率的基本恒定的功率损耗，而不是由辐射和对流损失。 顶板布置在加热器模块的顶部，支撑要处理的晶片，并提供污染屏障。 加热器模块耦合到电源，其适于向加热器模块提供变化量的功率，以将加热器模块保持在恒定的背景温度，即使当晶片经历来自LTP激光束的空间上和时间上变化的热负载时。 因此，来自激光器的热量通过加热器模块和绝缘体层从晶片传递到散热器。 在没有激光加热的情况下，根据需要也从加热器模块转移到晶片以保持恒定的背景温度。

公开(公告)号：US20090095724A1

公开(公告)日：2009-04-16

申请号：US12316013

申请日：2008-12-09

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： B23K26/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/073 ,  B23K26/0853 ,  B23K2101/40 ,  H01L21/268

摘要： A method and apparatus for performing laser thermal processing (LTP) using one or more two-dimensional arrays of laser diodes and corresponding one or more LTP optical systems to form corresponding one or more line images. The line images are scanned across a substrate, e.g., by moving the substrate relative to the one or more line images. The apparatus also includes one or more recycling optical systems arranged to re-image reflected annealing radiation back onto the substrate. The use of one or more recycling optical systems greatly improves the heating efficiency and uniformity during LTP.

摘要翻译： 一种使用一个或多个激光二极管阵列和对应的一个或多个LTP光学系统进行激光热处理（LTP）的方法和装置，以形成对应的一个或多个线图像。 线图像跨基板扫描，例如通过相对于一个或多个线图像移动基板。 该装置还包括一个或多个再循环光学系统，其布置成将反射的退火辐射重新映射回衬底上。 使用一个或多个循环光学系统大大提高了LTP期间的加热效率和均匀性。

公开(公告)号：US07154066B2

公开(公告)日：2006-12-26

申请号：US10787664

申请日：2004-02-26

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： B23K26/08

CPC分类号： B23K26/0604 ,  B23K26/032 ,  B23K26/04 ,  B23K26/043 ,  B23K26/0643 ,  B23K26/0738 ,  B23K26/08 ,  B23K26/082 ,  B23K2101/40 ,  H01L21/268 ,  H01L21/324 ,  H01L22/10

摘要： Apparatus and methods for thermally processing a substrate with scanned laser radiation are disclosed. The apparatus includes a continuous radiation source and an optical system that forms an image on a substrate. The image is scanned relative to the substrate surface so that each point in the process region receives a pulse of radiation sufficient to thermally process the region.

摘要翻译： 公开了用扫描激光辐射热处理衬底的装置和方法。 该装置包括连续辐射源和在衬底上形成图像的光学系统。 相对于基板表面扫描图像，使得处理区域中的每个点接收足以热处理该区域的辐射脉冲。

公开(公告)号：US07763828B2

公开(公告)日：2010-07-27

申请号：US10653625

申请日：2003-09-02

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： B23K26/00 ,  B23K26/02

CPC分类号： B23K26/0604 ,  B23K26/073 ,  B23K2101/40

摘要： A method and apparatus for performing laser thermal processing (LTP) using a two-dimensional array of laser diodes to form a line image, which is scanned across a substrate. The apparatus includes a two-dimensional array of laser diodes, the radiation from which is collimated in one plane using a cylindrical lens array, and imaged onto the substrate as a line image using an anomorphic, telecentric optical imaging system. The apparatus also includes a scanning substrate stage for supporting a substrate to be LTP processed. The laser diode radiation beam is incident on the substrate at angles at or near the Brewster's angle for the given substrate material and the wavelength of the radiation beam, which is linearly P-polarized. The use of a two-dimensional laser diode array allows for a polarized radiation beam of relatively high energy density to be delivered to the substrate, thereby allowing for LTP processing with good uniformity, reasonably short dwell times, and thus reasonably high throughput.

摘要翻译： 一种使用激光二极管的二维阵列进行激光热处理（LTP）的方法和装置，以形成跨越衬底扫描的线像。 该装置包括激光二极管的二维阵列，使用柱面透镜阵列在一个平面中准直的辐射，并使用异常远心光学成像系统作为线图像成像到基板上。 该装置还包括用于支撑待处理LTP的衬底的扫描衬底台。 对于给定的衬底材料，激光二极管辐射束以布鲁斯特角度或附近的角度入射到衬底上，并且是线性P偏振的辐射束的波长。 使用二维激光二极管阵列允许将相对较高能量密度的偏振辐射束输送到衬底，从而允许LTP处理具有良好的均匀性，合理短的停留时间，并因此允许相当高的通量。

公开(公告)号：US07326877B2

公开(公告)日：2008-02-05

申请号：US11002043

申请日：2004-12-01

申请人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

发明人： Iqbal A. Shareef ,  Igor Landau ,  David A. Markle ,  Somit Talwar ,  Michael O. Thompson ,  Ivelin A. Angelov ,  Senquan Zhou

IPC分类号： B23K26/00

CPC分类号： H01L21/67109 ,  B23K26/10 ,  B23K26/702 ,  B23K26/703 ,  H01L2924/0002 ,  H01L2924/00

摘要： Chuck methods and apparatus for supporting a semiconductor substrate and maintaining it at a substantially constant background temperature even when subject to a spatially and temporally varying thermal load. Chuck includes a thermal compensating heater module having a sealed chamber containing heater elements, a wick, and an alkali metal liquid/vapor. The chamber employs heat pipe principles to equalize temperature differences in the module. The spatially varying thermal load is quickly made uniform by thermal conductivity of the heater module. Heatsinking a constant amount of heat from the bottom of the heater module accommodates large temporal variations in the thermal heat load. Constant heat loss is preferably made to be at least as large as the maximum variation in the input heat load, less heat lost through radiation and convection, thus requiring a heat input through electrical heating elements. This allows for temperature control of the chuck, and hence the substrate.

摘要翻译： 用于支撑半导体衬底并将其保持在基本上恒定的背景温度的Chuck方法和装置，即使在经受空间和时间变化的热负载时。 卡盘包括一个热补偿加热器模块，其具有包含加热元件，芯和碱金属液体/蒸气的密封腔。 该室采用热管原理来均衡模块中的温差。 空间变化的热负荷通过加热器模块的热导率快速地均匀。 从加热器模块的底部散热恒定的热量可以适应热负荷的大的时间变化。 恒定的热损失优选地至少与输入热负荷的最大变化一样大，通过辐射和对流损失的热量较少，因此需要通过电加热元件的热​​输入。 这允许卡盘的温度控制，从而允许基板的温度控制。

公开(公告)号：US07098155B2

公开(公告)日：2006-08-29

申请号：US10762861

申请日：2004-01-22

申请人： Somit Talwar ,  David A. Markle

发明人： Somit Talwar ,  David A. Markle

IPC分类号： H01L21/324

CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/60 ,  B23K2101/40 ,  H01L21/2026

摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

摘要翻译： 使用在室温基本上不吸收衬底的退火辐射束来进行衬底的激光热退火（LTA）的设备和方法。 该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。 该方法包括将衬底加热到​​长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。

公开(公告)号：US07879741B2

公开(公告)日：2011-02-01

申请号：US11478171

申请日：2006-06-29

申请人： Somit Talwar ,  Michael O. Thompson ,  Boris Grek ,  David A. Markle

发明人： Somit Talwar ,  Michael O. Thompson ,  Boris Grek ,  David A. Markle

IPC分类号： H01L21/00

CPC分类号： H01L21/268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/60 ,  H01L21/2026

摘要： Apparatus and method for performing laser thermal annealing (LTA) of a substrate using an annealing radiation beam that is not substantially absorbed in the substrate at room temperature. The method takes advantage of the fact that the absorption of long wavelength radiation (1 micron or greater) in some substrates, such as undoped silicon substrates, is a strong function of temperature. The method includes heating the substrate to a critical temperature where the absorption of long-wavelength annealing radiation is substantial, and then irradiating the substrate with the annealing radiation to generate a temperature capable of annealing the substrate.

摘要翻译： 使用在室温基本上不吸收衬底的退火辐射束来进行衬底的激光热退火（LTA）的设备和方法。 该方法利用了在一些衬底（例如未掺杂的硅衬底）中吸收长波长辐射（1微米或更大）的吸收是温度的强函数的事实。 该方法包括将衬底加热到​​长波长退火辐射的吸收显着的临界温度，然后用退火辐射照射衬底以产生能够退火衬底的温度。