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1.发明授权公开(公告)号：US07423794B2
公开(公告)日：2008-09-09
申请号：US10545949
申请日：2004-02-15
CPC分类号： B81B3/0062 , B81B2201/042 , B81B2203/058 , B81C2201/019 , G01J5/20 , G01J2005/0077 , G02B26/0841 , H01L27/1203 , H01L27/14669 , H02N1/006
摘要： A multi-level decoupled micro-actuator device comprising a first level substrate (410), a second level frame (420) stacked on said first level substrate (410), a third level frame (430) stacked on said second level frame (420).
摘要翻译： 一种多级解耦微致动器装置，包括第一级衬底（410），堆叠在所述第一级衬底（410）上的第二级框架（420），堆叠在所述第二级框架（420）上的第三级框架 ）。
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2.发明授权公开(公告)号：US07412358B2
公开(公告)日：2008-08-12
申请号：US10160404
申请日：2002-06-04
CPC分类号： B81C99/006 , H02N1/006
摘要： A method of efficiently extracting the pull-in parameters of an electrostatically activated actuator. The actuator is modeled as an elastic element. For each of a plurality of deformations of the elastic element, a corresponding voltage is calculated. The highest such voltage is the pull-in voltage of the actuator. The corresponding deformation is the pull-in deformation of the actuator. Each deformation is defined by fixing a displacement of one degree of freedom of the elastic body and calculating corresponding equilibrium displacements of all the other degrees of freedom without the application of any external mechanical forces to ensure equilibrium. The actuator is altered to optimize whichever pull-in parameter is relevant to the desired application of the actuator.
摘要翻译： 一种有效提取静电激活致动器的拉入参数的方法。 致动器被建模为弹性元件。 对于弹性元件的多个变形中的每一个，计算相应的电压。 最高的这种电压是执行器的引入电压。 相应的变形是致动器的拉入变形。 通过固定弹性体的一个自由度的位移并计算所有其他自由度的相应的平衡位移来定义每个变形，而不必施加任何外部机械力来确保平衡。 致动器被改变以优化与执行器的期望应用相关的哪个拉入参数。
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3.发明申请公开(公告)号：US20060279862A1
公开(公告)日：2006-12-14
申请号：US10545949
申请日：2004-02-15
申请人： David Elata , Ofir Bochobza , Yael Nemirovsky
发明人： David Elata , Ofir Bochobza , Yael Nemirovsky
IPC分类号： G02B5/08
CPC分类号： B81B3/0062 , B81B2201/042 , B81B2203/058 , B81C2201/019 , G01J5/20 , G01J2005/0077 , G02B26/0841 , H01L27/1203 , H01L27/14669 , H02N1/006
摘要： A multi-level decoupled micro-actuator device comprising a first level substrate (410), a second level frame (420) stacked on said first level substrate (410), a third level frame (430) stacked on said second level frame (420).
摘要翻译： 一种多级解耦微致动器装置，包括第一级衬底（410），堆叠在所述第一级衬底（410）上的第二级框架（420），堆叠在所述第二级框架（420）上的第三级框架 ）。
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4.发明授权Sensing device having a thermal antenna and a method for sensing electromagnetic radiation 有权具有热天线的感测装置和用于感测电磁辐射的方法公开(公告)号：US09568367B2
公开(公告)日：2017-02-14
申请号：US13697375
申请日：2011-05-23
CPC分类号： G01J5/02 , G01J5/024 , G01T7/00 , H01Q7/00 , H01Q9/27 , H01Q15/0013 , H01Q19/10 , H01Q21/061
摘要： A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element.
摘要翻译： 提供了一种方法和感测装置。 感测装置可以包括：热天线，其包括电阻材料并且具有尺寸为微米级或亚微米级的横截面。 热天线可以接收电磁辐射，并将其直接转换成热。 感测装置还可以包括支撑元件，热传感器，其布置成响应于热传感器的感测区域的温度产生检测信号;保持元件，其可以支撑并热隔离热天线和热传感器并热隔离 以及可以处理检测信号以提供关于由热天线直接转换为热量的电磁辐射的信息的读出电路。 热天线和热传感器在空间上与支撑元件分离。
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公开(公告)号：US20140151581A1
公开(公告)日：2014-06-05
申请号：US14093543
申请日：2013-12-02
IPC分类号： G21K5/00
CPC分类号： G01N21/3581
摘要： A TeraHertz radiating system that may include a blackbody arranged to emit blackbody radiation that comprises a TeraHertz component, a visible light component and an infrared component; and a filtering module that is arranged to pass the TeraHertz component and to reject the visible light component and the infrared component to provide filtered radiation.
摘要翻译： TeraHertz辐射系统，其可以包括布置成发射黑体辐射的黑体，所述黑体辐射包括TeraHertz分量，可见光分量和红外分量; 以及过滤模块，其布置成使TeraHert分量通过并且拒绝可见光分量和红外分量以提供经滤波的辐射。
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6.发明授权Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same 失效用于红外线传感器的非冷却微电热计的Cd1-xZnxS高性能TCR材料及其制造方法公开(公告)号：US07527999B2
公开(公告)日：2009-05-05
申请号：US11294677
申请日：2005-12-06
申请人： Sara Stolyarova , Yehuda Sinai , Moshe Weinstein , Avi Shai , Yael Nemirovsky
发明人： Sara Stolyarova , Yehuda Sinai , Moshe Weinstein , Avi Shai , Yael Nemirovsky
IPC分类号： H01L21/00
CPC分类号： C23C16/306 , C23C14/0629 , C23C14/5806 , G01J5/20 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02557 , H01L21/0262
摘要： A Cd1-xZnxS film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd1-xZnxS material has excellent characteristics for use in a microbolometer-type uncooled infrared sensor. The film material can be deposited on microbolometer membranes or any other wafer for different applications. The film material can be deposited using the MOCVD technique, thermal evaporation or a different technique to form the film material over the wafer. The Cd1-xZnxS properties can be modified controlling certain deposition parameters and different annealing techniques. The process is performed at temperature compatible with CMOS technology.
摘要翻译： 具有高电阻热系数的Cd1-xZnxS薄膜材料在1.5％至3.7％的范围内。 Cd1-xZnxS材料具有优异的特性用于微热辐射计型非制冷红外传感器。 薄膜材料可以沉积在微热辐射计膜或任何其他晶片上以用于不同的应用。 可以使用MOCVD技术，热蒸发或不同的技术沉积膜材料以在晶片上形成薄膜材料。 可以修改Cd1-xZnxS性质，控制某些沉积参数和不同的退火技术。 该过程在与CMOS技术兼容的温度下进行。
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7.发明授权公开(公告)号：US06395192B1
公开(公告)日：2002-05-28
申请号：US09318608
申请日：1999-05-26
IPC分类号： B44C122
CPC分类号： H01L21/02046 , B08B7/0057 , H01L21/31116
摘要： A method and apparatus for selectively removing a native oxide layer from a silicon wafer without significantly affecting the underlying silicon or other materials that may be thereon, by exposing the silicon wafer to an etchant gas including NF3 while simultaneously exposing the wafer to ultraviolet radiation, and heating the wafer to a temperature of 100-400° C.
摘要翻译： 一种用于通过将硅晶片暴露于包括NF3的蚀刻剂气体同时将晶片暴露于紫外线辐射而将硅晶片暴露于紫外线辐射的同时，从硅晶片上选择性地去除天然氧化物层而不显着影响下面的硅或其上可能存在的其它材料的方法和装置，以及 将晶片加热至100-400℃的温度
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公开(公告)号：US09518953B2
公开(公告)日：2016-12-13
申请号：US13604661
申请日：2012-09-06
申请人： Yael Nemirovsky , Lior Gal , Igor Brouk
发明人： Yael Nemirovsky , Lior Gal , Igor Brouk
IPC分类号： G01N27/414
CPC分类号： G01N27/4146
摘要： An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.
摘要翻译： 一种ISFET检测器，用于确定流体中目标离子的浓度，该装置包括：半导体衬底，其包括分别具有源电极和漏电极的源极和漏极以及衬底中的沟道区域; 覆盖通道区域的绝缘材料; 形成在所述绝缘材料上的栅电极; 可在通道区域中形成电场的参考电极; 累积器，其包括厚度小于或等于约2nm（纳米）的材料层，其累积一定量的目标离子以响应于流体中目标离子的浓度; 形成有与栅电极分离的蓄电池的导电材料层; 以及将导电材料层电连接到栅电极的导电元件。
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9.发明申请Sensing device having a thermal antenna and a method for sensing electromagnetic radiation 有权具有热天线的感测装置和用于感测电磁辐射的方法公开(公告)号：US20130142215A1
公开(公告)日：2013-06-06
申请号：US13697375
申请日：2011-05-23
CPC分类号： G01J5/02 , G01J5/024 , G01T7/00 , H01Q7/00 , H01Q9/27 , H01Q15/0013 , H01Q19/10 , H01Q21/061
摘要： A method and a sensing device are provided. The sensing device may include: a thermal antenna that includes a resistive material and has a cross section that has dimensions that are of an order of a micron or of a sub-micron. The thermal antenna may receive electromagnetic radiation and directly convert it to heat. The sensing device may also include a supporting element, a thermal sensor arranged to generate detection signals responsive to a temperature of a sensed area of the thermal sensor, a holding element that may support and thermally isolate the thermal antenna and the thermal sensor and thermally isolate, and a readout circuit that may process the detection signals to provide information about the electromagnetic radiation that is directly converted to heat by the thermal antenna. The thermal antenna and the thermal sensor are spatially separated from the supporting element.
摘要翻译： 提供了一种方法和感测装置。 感测装置可以包括：热天线，其包括电阻材料并且具有尺寸为微米级或亚微米级的横截面。 热天线可以接收电磁辐射，并将其直接转换成热。 感测装置还可以包括支撑元件，热传感器，其布置成响应于热传感器的感测区域的温度产生检测信号;保持元件，其可以支撑并热隔离热天线和热传感器并热隔离 以及可以处理检测信号以提供关于由热天线直接转换为热量的电磁辐射的信息的读出电路。 热天线和热传感器在空间上与支撑元件分离。
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公开(公告)号：US20130056353A1
公开(公告)日：2013-03-07
申请号：US13604661
申请日：2012-09-06
申请人： Yael Nemirovsky , Lior Gal , Igor Brouk
发明人： Yael Nemirovsky , Lior Gal , Igor Brouk
IPC分类号： G01N27/414
CPC分类号： G01N27/4146
摘要： An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.
摘要翻译： 一种ISFET检测器，用于确定流体中目标离子的浓度，该装置包括：半导体衬底，其包括分别具有源电极和漏电极的源极和漏极以及衬底中的沟道区域; 覆盖通道区域的绝缘材料; 形成在所述绝缘材料上的栅电极; 可在通道区域中形成电场的参考电极; 累积器，其包括厚度小于或等于约2nm（纳米）的材料层，其累积一定量的目标离子以响应于流体中目标离子的浓度; 形成有与栅电极分离的蓄电池的导电材料层; 以及将导电材料层电连接到栅电极的导电元件。
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