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1.发明授权公开(公告)号：US08379286B2
公开(公告)日：2013-02-19
申请号：US13116430
申请日：2011-05-26
IPC分类号： G02B26/00
CPC分类号： G02F1/017 , B82Y20/00 , G02F2203/02
摘要： A modulating retroreflector system includes a modulating retroreflector having a plurality of multiple quantum well modulator pixels and at least one transimpedance amplifier. The transimpedance amplifier receives a photocurrent generated by at least one of the plurality of modulator pixels. Each pixel is capacitively coupled to a current driver, which applies a high frequency digital electrical signal to the pixel when the voltage at the output of the transimpedance amplifier exceeds a threshold value. The modulated output of the retroreflector is reflected toward the source of the received optical beam. The system activates high frequency current drivers for only the illuminated pixels, eliminating the need for a separate angle of incidence sensor and reducing power requirements. A low frequency FSK signal can be superimposed on the DC optical interrogation beam and recovered as the unfiltered output of the transimpedance amplifier, to provide simultaneous bidirectional communication without a half-duplex communication protocol.
摘要翻译： 调制后向反射器系统包括具有多个多量子阱调制器像素和至少一个跨阻放大器的调制后向反射器。 跨阻放大器接收由多个调制器像素中的至少一个产生的光电流。 每个像素电容耦合到电流驱动器，当跨阻放大器的输出处的电压超过阈值时，该电流驱动器向像素施加高频数字电信号。 后向反射器的调制输出朝向所接收的光束的源反射。 该系统激活只有照明像素的高频电流驱动器，无需单独的入射角传感器和降低功率需求。 低频FSK信号可以叠加在DC光询问光束上，并作为跨滤波放大器的未滤波输出恢复，以提供同时双向通信而无需半双工通信协议。
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2.发明申请Integrated Angle of Arrival Sensing and Duplex Communication with Cats-Eye Multiple Quantum Well Modulating Retroreflector 有权综合角度与猫眼多量子井调制逆反射器的到达感应和双工通信公开(公告)号：US20110292485A1
公开(公告)日：2011-12-01
申请号：US13116430
申请日：2011-05-26
IPC分类号： G02F1/01
CPC分类号： G02F1/017 , B82Y20/00 , G02F2203/02
摘要： A modulating retroreflector system includes a modulating retroreflector having a plurality of multiple quantum well modulator pixels and at least one transimpedance amplifier. The transimpedance amplifier receives a photocurrent generated by at least one of the plurality of modulator pixels. Each pixel is capacitively coupled to a current driver, which applies a high frequency digital electrical signal to the pixel when the voltage at the output of the transimpedance amplifier exceeds a threshold value. The modulated output of the retroreflector is reflected toward the source of the received optical beam. The system activates high frequency current drivers for only the illuminated pixels, eliminating the need for a separate angle of incidence sensor and reducing power requirements. A low frequency FSK signal can be superimposed on the DC optical interrogation beam and recovered as the unfiltered output of the transimpedance amplifier, to provide simultaneous bidirectional communication without a half-duplex communication protocol.
摘要翻译： 调制后向反射器系统包括具有多个多量子阱调制器像素和至少一个跨阻放大器的调制后向反射器。 跨阻放大器接收由多个调制器像素中的至少一个产生的光电流。 每个像素电容耦合到电流驱动器，当跨阻放大器的输出处的电压超过阈值时，该电流驱动器向像素施加高频数字电信号。 后向反射器的调制输出朝向所接收的光束的源反射。 该系统激活只有照明像素的高频电流驱动器，无需单独的入射角传感器和降低功率需求。 低频FSK信号可以叠加在DC光询问光束上，并作为跨滤波放大器的未滤波输出恢复，以提供同时双向通信而无需半双工通信协议。
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3.发明申请High Performance Chirped Electrode Design for Large Area Optoelectronic Devices 有权高性能啁啾电极设计大面积光电子器件公开(公告)号：US20110051217A1
公开(公告)日：2011-03-03
申请号：US12942063
申请日：2010-11-09
IPC分类号： G02F1/017 , G02F1/015 , H01L31/0352
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件。 像素包括相对掺杂的半导体层和形成在相对掺杂的半导体层上的顶部电极。 顶部电极具有至少一个母线和从母线延伸的多个指状物的栅格图案，并且指状物之间的间隔随着沿着母线的接合板的距离而减小。 每个像素还可以包括在半导体基底上形成的多量子阱。 顶部电极形状在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾的栅电极平衡了串联电阻的半导体薄层电阻和金属线电阻分量。
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公开(公告)号：US10261388B2
公开(公告)日：2019-04-16
申请号：US15906204
申请日：2018-02-27
摘要： A device includes a waveguide grating out-coupler, and a tunable uniform phase shifter communicating with the waveguide grating out-coupler. The tunable uniform phase shifter steers a Hat phase front along a first angle in a first plane. Optionally, the waveguide grating out-coupler includes a modulated refractive index and a physical grating period. The tunable uniform phase shifter controls the refractive index, thereby controlling an effective grating period. The grating period relates to die modulated refractive index, and the physical grating period. Optionally, the tunable uniform phase shifter includes a first thermo-optic phase shifter, a first electro-optic phase shifter, or a first micro-electro-mechanical system index perturbation phase shifter. Optionally, the tunable linear gradient phase shifter communicates with the waveguide grating out-coupler and steers a beam along the flat phase front along a second angle in a second plane, which is perpendicular to the first plane.
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5.发明申请High Performance Chirped Electrode Design for Large Area Optoelectronic Devices 有权高性能啁啾电极设计大面积光电子器件公开(公告)号：US20100188725A1
公开(公告)日：2010-07-29
申请号：US12753952
申请日：2010-04-05
IPC分类号： G02F1/015 , H01L31/0352
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件。 像素包括相对掺杂的半导体层和形成在相对掺杂的半导体层上的顶部电极。 顶部电极具有至少一个母线和从母线延伸的多个指状物的栅格图案，并且指状物之间的间隔随着沿着母线的接合板的距离而减小。 每个像素还可以包括在半导体基底上形成的多量子阱。 顶部电极形状在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾的栅电极平衡了串联电阻的半导体薄层电阻和金属线电阻分量。
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公开(公告)号：US20180252983A1
公开(公告)日：2018-09-06
申请号：US15906204
申请日：2018-02-27
CPC分类号： G02F1/292 , G01S7/4813 , G01S7/4817 , G02B6/124 , G02B6/2804 , G02B6/2813 , G02B6/2821 , G02F2201/06
摘要： A device includes a waveguide grating out-coupler, and a tunable uniform phase shifter communicating with the waveguide grating out-coupler. The tunable uniform phase shifter steers a flat phase front along a first angle in a first plane. Optionally, the waveguide grating out-coupler includes a modulated refractive index and a physical grating period. The tunable uniform phase shifter controls the refractive index, thereby controlling an effective grating period. The grating period relates to the modulated refractive index, and the physical grating period. Optionally, the tunable uniform phase shifter includes a first thermo-optic phase shifter, a first electro-optic phase shifter, or a first micro-electro-mechanical system index perturbation phase shifter. Optionally, the tunable linear gradient phase shifter communicates with the waveguide grating out-coupler and steers a beam along the flat phase front along a second angle in a second plane, which is perpendicular to the first plane.
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7.发明授权High performance chirped electrode design for large area optoelectronic devices 有权用于大面积光电子器件的高性能啁啾电极设计公开(公告)号：US07852543B2
公开(公告)日：2010-12-14
申请号：US12753952
申请日：2010-04-05
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件。 像素包括相对掺杂的半导体层和形成在相对掺杂的半导体层上的顶部电极。 顶部电极具有至少一个母线和从母线延伸的多个指状物的栅格图案，并且指状物之间的间隔随着沿着母线的接合板的距离而减小。 每个像素还可以包括在半导体基底上形成的多量子阱。 顶部电极形状在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾的栅电极平衡了串联电阻的半导体薄层电阻和金属线电阻分量。
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8.发明申请High performance chirped electrode design for large area optoelectronic devices 有权用于大面积光电子器件的高性能啁啾电极设计公开(公告)号：US20090073536A1
公开(公告)日：2009-03-19
申请号：US12210665
申请日：2008-09-15
IPC分类号： G02F1/015 , H01L31/0352
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件，每个像素包括：形成在半导体基底上的多量子阱，多量子阱上相对掺杂的半导体层，以及顶部电极 半导体层，顶部电极成形为在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾的栅电极平衡了串联电阻的半导体薄层电阻和金属线电阻分量。
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9.发明授权Dual-purpose electrode/mirror design for optoelectronic devices in a focusing assembly 有权聚焦组件中光电器件的双用途电极/镜面设计公开(公告)号：US08223422B2
公开(公告)日：2012-07-17
申请号：US12942063
申请日：2010-11-09
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base. Pixels include oppositely doped semiconductor layer and a top electrode formed on the oppositely doped semiconductor layer. The top electrode has a grid pattern with at least one busbar and a plurality of fingers extending from the busbar, and spacing between the fingers decreases with distance from the bondpad along the busbar. Each pixel can also include a multiple quantum well formed on the semiconductor base. The top electrode shape produces an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件。 像素包括相对掺杂的半导体层和形成在相对掺杂的半导体层上的顶部电极。 顶部电极具有至少一个母线和从母线延伸的多个指状物的栅格图案，并且指状物之间的间隔随着沿着母线的接合板的距离而减小。 每个像素还可以包括在半导体基底上形成的多量子阱。 顶部电极形状在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾的栅电极平衡了串联电阻的半导体薄层电阻和金属线电阻分量。
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10.发明授权High performance chirped electrode design for large area optoelectronic devices 有权用于大面积光电子器件的高性能啁啾电极设计公开(公告)号：US07719746B2
公开(公告)日：2010-05-18
申请号：US12210665
申请日：2008-09-15
CPC分类号： G02F1/015 , B82Y20/00 , G02F2201/122 , G02F2203/02 , G02F2203/12 , H01L31/022408 , H01L31/035254 , H01L31/105
摘要： An electro-optic device with a doped semiconductor base and a plurality of pixels on the semiconductor base, each pixel including: a multiple quantum well formed on the semiconductor base, an oppositely doped semiconductor layer on the multiple quantum well, and a top electrode on the semiconductor layer, the top electrode shaped to produce an approximately uniform lateral resistance in the pixel. An embodiment is a large area modulator for modulating retro-reflector systems, which typically use large area surface-normal modulators with large lateral current flow. Uniform resistance to each part of the modulator decreases location dependence of frequency response. A chirped grid electrode balances semiconductor sheet resistance and metal line resistance components of the series resistance.
摘要翻译： 一种具有掺杂半导体基底和半导体基底上的多个像素的电光器件，每个像素包括：形成在半导体基底上的多量子阱，多量子阱上相对掺杂的半导体层，以及顶部电极 半导体层，顶部电极成形为在像素中产生大致均匀的横向电阻。 一个实施例是用于调制后向反射器系统的大面积调制器，其通常使用具有大横向电流流动的大面积表面正常调制器。 对调制器各部分的均匀电阻降低了频率响应的位置依赖性。 啁啾栅格电极平衡串联电阻的半导体薄层电阻和金属线电阻分量。
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