公开(公告)号：US20050217799A1

公开(公告)日：2005-10-06

申请号：US10813119

申请日：2004-03-31

申请人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

发明人： David O'Meara ,  Gerrit Leusink ,  Stephen Cabral ,  Anthony Dip ,  Cory Wajda ,  Raymond Joe

IPC分类号： C23F1/00 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01J2237/2001

摘要： A wafer heating assembly is described having a unique heater element for use in a single wafer processing systems. The heating unit includes a carbon wire element encased in a quartz sheath. The heating unit is as contamination-free as the quartz, which permits direct contact to the wafer. The mechanical flexibility of the carbon ‘wire’ or ‘braided’ structure permits a coil configuration, which permits independent heater zone control across the wafer. The multiple independent heater zones across the wafer can permit temperature gradients to adjust film growth/deposition uniformity and rapid thermal adjustments with film uniformity superior to conventional single wafer systems and with minimum to no wafer warping. The low thermal mass permits a fast thermal response that enables a pulsed or digital thermal process that results in layer-by-layer film formation for improved thin film control.

摘要翻译： 描述了具有用于单个晶片处理系统的唯一加热器元件的晶片加热组件。 加热单元包括封装在石英鞘中的碳线元件。 加热单元与石英无污染，允许直接接触晶片。 碳线或“编织”结构的机械灵活性允许线圈构造，其允许跨晶片的独立加热器区域控制。 跨晶片的多个独立的加热器区域可以允许温度梯度调节膜生长/沉积均匀性和快速的热调节，其膜均匀性优于常规单晶片系统，并且最小至无晶片翘曲。 低热质量允许快速的热响应，其实现脉冲或数字热处理，其导致逐层成膜以改善薄膜控制。

公开(公告)号：US20060228898A1

公开(公告)日：2006-10-12

申请号：US11093261

申请日：2005-03-30

申请人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

发明人： Cory Wajda ,  Masanobu Igeta ,  Gerrit Leusink

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C8/34 ,  C23C8/36 ,  H01J37/32192 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/31691 ,  H01L28/56

摘要： A method for preparing an interfacial layer for a high-k dielectric layer on a substrate. A surface of said substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen to nitridate the oxide film to form the interfacial layer. A high-k dielectric layer is formed on said interfacial layer.

摘要翻译： 一种制备用于衬底上的高k电介质层的界面层的方法。 所述衬底的表面暴露于由紫外线（UV）辐射引起的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基以形成氧化膜。 将氧化膜暴露于通过包含至少一种包含氮的分子组合物的第二工艺气体的等离子体诱导解离而形成的氮自由基以氮化氧化物膜以形成界面层。 在所述界面层上形成高k电介质层。

公开(公告)号：US06652711B2

公开(公告)日：2003-11-25

申请号：US09875339

申请日：2001-06-06

申请人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

发明人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

IPC分类号： C23F100

CPC分类号： H01J37/3244 ,  H01J37/321

摘要： A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

公开(公告)号：US06417626B1

公开(公告)日：2002-07-09

申请号：US09796971

申请日：2001-03-01

申请人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

发明人： Jozef Brcka ,  John Drewery ,  Michael Grapperhaus ,  Gerrit Leusink ,  Glyn Reynolds ,  Mirko Vukovic ,  Tugrul Yasar

IPC分类号： H01J724

CPC分类号： H01J37/321

摘要： A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.

摘要翻译： 一种等离子体处理系统，其具有在真空室的真空处理空间内有效地将射频能量耦合到等离子体的等离子体源。 等离子体源包括电介质槽，电感元件和一对开槽沉积屏蔽。 真空室的室壁包括接收电介质槽的环形开口。 槽进入真空处理空间以将电感元件浸入等离子体内。 从电感元件感应耦合到等离子体的RF能量的空间分布可以通过改变开槽的沉积屏蔽中的槽，电感元件的构造以及槽的厚度或几何形状来调整。 射频能量的高效感应耦合对于产生空间均匀的大面积等离子体来处理大面积衬底特别有效。

公开(公告)号：US20070032079A1

公开(公告)日：2007-02-08

申请号：US11537575

申请日：2006-09-29

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa

IPC分类号： H01L21/44

CPC分类号： C23C16/4481 ,  C23C16/16

摘要： A method for depositing a Ru metal layer on a patterned substrate from a film precursor vapor delivered from a multi-tray film precursor evaporation system. The method comprises providing a patterned substrate in a process chamber of a deposition system, and forming a process gas containing Ru3(CO)12 precursor vapor and a carrier gas comprising CO gas. The process gas is formed by: providing a solid Ru3(CO)12 precursor in a plurality of spaced trays within a precursor evaporation system, wherein each tray is configured to support the solid precursor and wherein the plurality of spaced trays collectively provide a plurality of surfaces of solid precursor; heating the solid precursor in the plurality of spaced trays in the precursor evaporation system to a temperature greater than about 60° C. and maintaining the solid precursor at the temperature to form the vapor; and flowing the carrier gas in contact with the plurality of surfaces of the solid precursor during the heating to capture Ru3(CO)12 precursor vapor in the carrier gas as the vapor is being formed at the plurality of surfaces. The method further includes transporting the process gas from the precursor evaporation system to the process chamber and exposing the patterned substrate to the process gas to deposit a Ru metal layer on the patterned substrate by a thermal CVD.

摘要翻译： 一种用于从多托盘膜前体蒸发系统递送的膜前体蒸气在图案化衬底上沉积Ru金属层的方法。 该方法包括在沉积系统的处理室中提供图案化的衬底，并且形成含有Ru 3（CO）12 N 2前体蒸气的工艺气体和包含CO 加油站。 工艺气体通过以下方式形成：在前体蒸发系统内的多个间隔的塔板中提供固体Ru 3（CO）12 N 2前体，其中每个托盘被构造成支撑 所述固体前体并且其中所述多个间隔的托盘共同提供固体前体的多个表面; 将前体蒸发系统中的多个间隔的塔板中的固体前体加热到大于约60℃的温度，并将固体前体保持在该温度以形成蒸气; 并且在加热期间使载气与固体前体的多个表面接触，以使载气中的Ru 3（CO）12 N 2前体蒸汽作为蒸气 在多个表面上形成。 该方法还包括将处理气体从前体蒸发系统输送到处理室，并将图案化衬底暴露于工艺气体，以通过热CVD沉积图案化衬底上的Ru金属层。

公开(公告)号：US20060224008A1

公开(公告)日：2006-10-05

申请号：US11095448

申请日：2005-03-31

申请人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

发明人： Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

IPC分类号： C07F15/00

CPC分类号： C23C16/4481 ,  C23C16/4485 ,  C23C16/45593

摘要： A method and system for refurbishing a metal carbonyl precursor. The method includes providing a metal precursor vaporization system containing a metal carbonyl precursor containing un-reacted and partially reacted metal carbonyl precursor, flowing a CO-containing gas through the metal precursor vaporization system to a precursor collection system in fluid communication with the metal precursor vaporization system to transfer the un-reacted metal carbonyl precursor vapor to the precursor collection system, and collecting the transferred metal carbonyl precursor in the precursor collection system. A method is provided for monitoring at least one metal carbonyl precursor parameter to determine a status of the metal carbonyl precursor and the need for refurbishing the metal carbonyl precursor.

摘要翻译： 一种用于翻新金属羰基前体的方法和系统。 该方法包括提供含有含有未反应和部分反应的金属羰基前体的金属羰基前体的金属前体蒸发系统，其将含CO气体通过金属前体蒸发系统流动到与金属前体蒸发流体连通的前体收集系统 系统将未反应的金属羰基前体蒸气转移到前体收集系统中，并在前体收集系统中收集转移的金属羰基前体。 提供了一种用于监测至少一种金属羰基前体参数以确定羰基金属前体的状态以及需要翻新金属羰基前体的方法。

公开(公告)号：US20060185597A1

公开(公告)日：2006-08-24

申请号：US11351539

申请日：2006-02-10

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

摘要翻译： 描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。 多托盘膜前体蒸发系统包括一个或多个托盘。 每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

公开(公告)号：US20060110530A1

公开(公告)日：2006-05-25

申请号：US10996145

申请日：2004-11-23

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/00

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76873

摘要： A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.

摘要翻译： 通过将羰基金属前体的蒸气与CO气体混合来提高金属 - 羰基前体的金属层的沉积速率的方法。 该方法包括在沉积系统的处理室中提供衬底，形成含有羰基金属前体蒸气和CO气体的工艺气体，以及将衬底暴露于工艺气体，以通过热量沉积在衬底上的金属层 化学气相沉积工艺。

公开(公告)号：US20060185598A1

公开(公告)日：2006-08-24

申请号：US11351546

申请日：2006-02-10

申请人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

发明人： Kenji Suzuki ,  Emmanuel Guidotti ,  Gerrit Leusink ,  Masamichi Hara ,  Daisuke Kuroiwa ,  Tadahiro Ishizaka

IPC分类号： C23C16/00

CPC分类号： C23C16/4481

摘要： A high conductance, multi-tray film precursor evaporation system coupled with a high conductance vapor delivery system is described for increasing the deposition rate by increasing exposed surface area of film precursor. The multi-tray film precursor evaporation system includes one or more trays. Each tray is configured to support and retain film precursor in, for example, solid powder form or solid tablet form. Additionally, each tray is configured to provide for a high conductance flow of carrier gas over the film precursor while the film precursor is heated. For example, the carrier gas flows inward over the film precursor, and vertically upward through a flow channel within the stackable trays and through an outlet in the solid precursor evaporation system.

摘要翻译： 描述了与高电导蒸气传输系统耦合的高电导多托盘膜前体蒸发系统，以通过增加膜前体的暴露表面积来增加沉积速率。 多托盘膜前体蒸发系统包括一个或多个托盘。 每个托盘被构造成支撑和保持例如固体粉末形式或固体片剂形式的膜前体。 此外，每个托盘构造成在膜前体被加热的同时提供载气在膜前体上的高电导流。 例如，载体气体向内流过膜前体，并且垂直向上流过可堆放托盘内的流动通道并通过固体前驱物蒸发系统中的出口。

公开(公告)号：US20060182886A1

公开(公告)日：2006-08-17

申请号：US11058676

申请日：2005-02-15

申请人： Emmanuel Guidotti ,  Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

发明人： Emmanuel Guidotti ,  Kenji Suzuki ,  Gerrit Leusink ,  Fenton McFeely

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： C23C16/4481 ,  C23C16/16 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45565

摘要： A method and system for improved delivery of a solid precursor. A chemically inert coating is provided on system components in a precursor delivery line to reduce decomposition of a relatively unstable precursor vapor in the precursor delivery line, thereby allowing increased delivery of the precursor vapor to a processing zone for depositing a layer on a substrate. The solid precursor can, for example, be a ruthenium carbonyl or a rhenium carbonyl. The inert coating can, for example, be a CxFy-containing polymer, such as polytetrafluoroethylene or ethylene-chlorotrifluoroethylene. Other benefits of using an inert coating include easy periodic cleaning of deposits from the precursor delivery line.

摘要翻译： 一种用于改进固体前体递送的方法和系统。 在前体输送管线中的系统组分上提供化学惰性的涂层，以减少前体输送管线中相对不稳定的前体蒸汽的分解，从而允许增加前体蒸气的输送到用于在基底上沉积层的处理区域。 固体前体可以是例如羰基钌或羰基铼。 惰性涂层可以是例如聚四氟乙烯或乙烯 - 三氟氯乙烯的聚合物。 使用惰性涂层的其他优点包括容易地从前体输送管线定期清洁沉积物。