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12 条记录 (耗时 0.016 秒)

    Regeneration of field emission from carbon nanotubes
    2.
    发明申请
    Regeneration of field emission from carbon nanotubes 审中-公开
    碳纳米管的场发射再生

    公开(公告)号：US20080048543A1

    公开(公告)日：2008-02-28

    申请号：US11229437

    申请日：2005-09-14

    申请人： David S.Y. Hsu ,  Jonathan L. Shaw

    发明人： David S.Y. Hsu ,  Jonathan L. Shaw

    IPC分类号： H01J1/02

    CPC分类号： H01J9/505 ,  B82Y10/00 ,  H01J2201/30469 ,  Y02W30/828

    摘要： Large increases in field emission current can be achieved when operating carbon nanotubes in substantial pressures of hydrogen, especially when the nanotubes were contaminated. Integrally gated carbon nanotube field emitter arrays were operated without special pre-cleaning in 10−6 Torr or greater of hydrogen to produce orders of magnitude enhancement in emission. For a cNTFEA intentionally degraded by oxygen, the operation in hydrogen resulted in a 340-fold recovery in emission.

    摘要翻译： 在大量氢气压力下操作碳纳米管时，特别是当纳米管被污染时，可以实现场致发射电流的大幅增加。 整体控制的碳纳米管场发射极阵列在10 -6乇或更大的氢气中没有特别预清洗的情况下进行操作，以产生发射数量级。 对于由氧有意降解的cNTFEA，在氢气中的操作导致发射回收率为340倍。

    METHOD OF MAKING AN INTEGRALLY GATED CARBON NANOTUBE FIELD IONIZER DEVICE
    3.
    发明申请
    METHOD OF MAKING AN INTEGRALLY GATED CARBON NANOTUBE FIELD IONIZER DEVICE 有权
    制备全集成碳纳米管场离子体装置的方法

    公开(公告)号：US20090224225A1

    公开(公告)日：2009-09-10

    申请号：US12420160

    申请日：2009-04-08

    申请人： David S.Y. Hsu ,  Jonathan L. Shaw

    发明人： David S.Y. Hsu ,  Jonathan L. Shaw

    IPC分类号： H01L29/41 ,  H01L21/28

    CPC分类号： H01J49/168 ,  B82Y10/00 ,  H01L51/0048 ,  Y10S977/876 ,  Y10S977/936 ,  Y10S977/938

    摘要： A method of making an integrally gated carbon nanotube field ionization device comprising forming a first insulator layer on a first side of a substrate, depositing a conductive gate layer on the first insulator layer, forming a cavity in the substrate by etching a second side of the substrate to near the first insulator layer, wherein the second side is opposite the first side and wherein a portion of the first insulator is over the cavity, etching an aperture in the portion of the first insulator layer and the conductive gate layer to form an aperture sidewall, depositing a second insulator layer, removing the second insulator layer from the top surface, depositing a metallization layer over the second insulator layer, depositing a catalyst layer on the metallization layer and growing a carbon nanotube from the catalyst layer.

    摘要翻译： 一种制造整体门控的碳纳米管场电离装置的方法，包括在衬底的第一侧上形成第一绝缘体层，在第一绝缘体层上沉积导电栅极层，通过蚀刻第二绝缘层的第二面 衬底到第一绝缘体层附近，其中第二侧与第一侧相对，并且其中第一绝缘体的一部分在空腔之上，蚀刻第一绝缘体层和导电栅极层的部分中的孔，以形成孔 侧壁，沉积第二绝缘体层，从顶表面去除第二绝缘体层，在第二绝缘体层上沉积金属化层，在金属化层上沉积催化剂层，并从催化剂层生长碳纳米管。

    Method and apparatus for regulating electron emission in field emitter devices
    5.
    发明授权
    Method and apparatus for regulating electron emission in field emitter devices 失效
    用于调节场发射器件中的电子发射的方法和装置

    公开(公告)号：US06686680B2

    公开(公告)日：2004-02-03

    申请号：US10340669

    申请日：2003-01-13

    申请人： Jonathan L. Shaw ,  David S. Y. Hsu

    发明人： Jonathan L. Shaw ,  David S. Y. Hsu

    IPC分类号： H01J102

    CPC分类号： H01J3/022 ,  Y10S977/939

    摘要： An apparatus and method for regulating the emission current from a single (macroscopic) field emitter, from groups of emitters within a large (microscopic) array, or from each cell within an array is described. The apparatus includes an additional aperture, fabricated at each field emitter array cell, to create and electron energy filter. The filter aperture of the electron energy filter is similar to the gate aperture but located above or in front of the gate aperture, and is held at a positive potential lower than the gate. The filter allows only those electrons with energy greater than some minimum (the cutoff energy) to pass through. A current-limiting circuit is placed in series with the gate aperture, limiting the total current of electrons that do not pass through the filter. Thus, emission from low energy states is limited without limiting emission from states near the Fermi level.

    摘要翻译： 描述了一种用于调节来自单个（宏观）场发射器，来自大（微观）阵列内的发射器组或阵列内的每个电池的发射极的发射电流的装置和方法。 该装置包括在每个场发射器阵列单元处制造的附加孔，以产生电子能量滤波器。 电子能量滤波器的滤光器孔径类似于栅极孔径，但位于栅极孔的上方或前面，并且保持在低于栅极的正电位。 滤波器只允许能量大于一些最小值（截止能量）的电子通过。 电流限制电路与栅极孔串联放置，限制了不通过滤光器的电子的总电流。 因此，来自低能量状态的发射是有限的，而不限制费米能级附近的状态的发射。

    Lock mechanism for extension ladder
    6.
    发明授权
    Lock mechanism for extension ladder 失效
    延伸梯的锁定机构

    公开(公告)号：US4467891A

    公开(公告)日：1984-08-28

    申请号：US508400

    申请日：1983-06-27

    申请人： Jonathan L. Shaw

    发明人： Jonathan L. Shaw

    IPC分类号： E06C1/12 ,  E06C7/06

    CPC分类号： E06C7/06 ,  E06C1/12

    摘要： There is disclosed a releasable lock mechanism for an extension ladder comprising a bell crank lever attachable to a fly rail of the ladder through a first pivot, and having first and second joined arm segments extending generally forward and downward, respectively, from their juncture. The first arm segment has at its front a head movable by pivoting of the lever between first and second positions at which the head will and will not, respectively, engage base rungs of the ladder. A tongue with a tip is attached to a lower part of the lever's second arm segment through a second pivot. Attachable to the rail is a frame operable during downsliding of the ladder's fly section to guide translatory movement of the tongue so that strikings of its tip by base rungs of the ladder are effective to pivot the lever to permit its head to pass by such rungs. When the lever head engages the top of a base rung to lock the fly section from downsliding, the tongue is held against flapping about the second pivot.

    摘要翻译： 公开了一种用于延伸梯的可释放的锁定机构，其包括通过第一枢轴连接到梯子的飞轨的铃声曲柄杆，并且具有分别从其接合部大致向前和向下延伸的第一和第二连接的臂段。 第一臂段在其前部具有可移动的头部，其可以通过在第一和第二位置之间的枢转而移动，在该位置处，头部将分别接合并且不会分别接合梯子的基座梯级。 具有尖端的舌头通过第二枢轴附接到杆的第二臂段的下部。 可以安装在轨道上的是在梯子的飞行部分的滑坡期间可操作的框架，用于引导舌头的平移运动，使得其尖端的梯子的基座梯级的跳动有效地枢转杠杆以允许其头部通过这种梯级。 当杠杆头接合基座梯架的顶部以将飞行部分从下滑中锁定时，舌部被保持抵抗绕第二枢轴的摆动。

    Graded electron affinity semiconductor field emitter
    8.
    发明授权
    Graded electron affinity semiconductor field emitter 失效
    分级电子亲和力半导体场发射器

    公开(公告)号：US5773920A

    公开(公告)日：1998-06-30

    申请号：US498266

    申请日：1995-07-03

    申请人： Jonathan L. Shaw ,  Kevin Jensen ,  Henry F. Gray

    发明人： Jonathan L. Shaw ,  Kevin Jensen ,  Henry F. Gray

    IPC分类号： H01J1/304 ,  H01L31/00

    CPC分类号： H01J1/3042

    摘要： A field emitter is disclosed comprising a graded electron affinity surface ayer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.

    摘要翻译： 公开了一种场发射器，其包括梯度电子亲和表面层。 分级电子亲和层提供增加的跨导，减少发射电子的能量分布，降低噪声和增加其操作的均匀性。