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1.发明申请公开(公告)号：US20120153343A1
公开(公告)日：2012-06-21
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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2.发明申请公开(公告)号：US20110008922A1
公开(公告)日：2011-01-13
申请号：US12879692
申请日：2010-09-10
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
IPC分类号： H01L33/36
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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3.发明授权公开(公告)号：US08436368B2
公开(公告)日：2013-05-07
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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4.发明授权公开(公告)号：US08163577B2
公开(公告)日：2012-04-24
申请号：US12879692
申请日：2010-09-10
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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5.发明授权Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures 有权具有电流还原结构的发光器件和形成具有电流还原结构的发光器件的方法公开(公告)号：US07795623B2
公开(公告)日：2010-09-14
申请号：US11715687
申请日：2007-03-08
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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6.发明申请Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures 有权具有电流还原结构的发光器件和形成具有电流还原结构的发光器件的方法公开(公告)号：US20080217635A1
公开(公告)日：2008-09-11
申请号：US11715687
申请日：2007-03-08
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater , Matthew Donofrio , John Edmond
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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公开(公告)号：US09640737B2
公开(公告)日：2017-05-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
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公开(公告)号：US20120193660A1
公开(公告)日：2012-08-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
摘要翻译： 水平发光二极管包括在同一面上的阳极和阴极触点以及具有倾斜侧壁的透明衬底。 在倾斜侧壁上设置平均当量粒径d50为至少约10μm的保形荧光体层。 可以提供高纵横比基底。 LED可以直接连接到底座。
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公开(公告)号：USD593968S1
公开(公告)日：2009-06-09
申请号：US29328502
申请日：2008-11-25
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公开(公告)号：USD583338S1
公开(公告)日：2008-12-23
申请号：US29284434
申请日：2007-09-07
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