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1.发明申请公开(公告)号：US20120153343A1
公开(公告)日：2012-06-21
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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2.发明授权公开(公告)号：US08436368B2
公开(公告)日：2013-05-07
申请号：US13406251
申请日：2012-02-27
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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3.发明申请公开(公告)号：US20110008922A1
公开(公告)日：2011-01-13
申请号：US12879692
申请日：2010-09-10
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, JR. , Matthew Donofrio , John Edmond
IPC分类号： H01L33/36
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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4.发明授权公开(公告)号：US08163577B2
公开(公告)日：2012-04-24
申请号：US12879692
申请日：2010-09-10
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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5.发明授权Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures 有权具有电流还原结构的发光器件和形成具有电流还原结构的发光器件的方法公开(公告)号：US07795623B2
公开(公告)日：2010-09-14
申请号：US11715687
申请日：2007-03-08
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater, Jr. , Matthew Donofrio , John Edmond
IPC分类号： H01L27/15
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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6.发明申请Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures 有权具有电流还原结构的发光器件和形成具有电流还原结构的发光器件的方法公开(公告)号：US20080217635A1
公开(公告)日：2008-09-11
申请号：US11715687
申请日：2007-03-08
申请人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater , Matthew Donofrio , John Edmond
发明人： David Todd Emerson , Kevin Haberern , Michael John Bergmann , David B. Slater , Matthew Donofrio , John Edmond
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译： 发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域 或n型半导体层并且与非透明特征对准。 导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域 地区。
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公开(公告)号：US09640737B2
公开(公告)日：2017-05-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
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公开(公告)号：US20120193660A1
公开(公告)日：2012-08-02
申请号：US13018013
申请日：2011-01-31
申请人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
发明人： Matthew Donofrio , John Adam Edmond , James Ibbetson , David Todd Emerson , Michael John Bergmann , Kevin Haberern , Raymond Rosado , Jeffrey Carl Britt
CPC分类号： H01L33/505 , H01L33/20 , H01L33/507
摘要： Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
摘要翻译： 水平发光二极管包括在同一面上的阳极和阴极触点以及具有倾斜侧壁的透明衬底。 在倾斜侧壁上设置平均当量粒径d50为至少约10μm的保形荧光体层。 可以提供高纵横比基底。 LED可以直接连接到底座。
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公开(公告)号：US09443903B2
公开(公告)日：2016-09-13
申请号：US13361569
申请日：2012-01-30
申请人： Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
发明人： Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
IPC分类号： H01L33/62 , H01L27/15 , H01L23/00 , H01L25/075 , H01L33/40
CPC分类号： H01L27/153 , H01L24/29 , H01L24/32 , H01L24/83 , H01L25/0753 , H01L33/40 , H01L33/62 , H01L2224/16225 , H01L2224/29 , H01L2224/2908 , H01L2224/29083 , H01L2224/29084 , H01L2224/29101 , H01L2224/29111 , H01L2224/29144 , H01L2224/29155 , H01L2224/2919 , H01L2224/32014 , H01L2224/32225 , H01L2224/32245 , H01L2224/32258 , H01L2224/3303 , H01L2224/48091 , H01L2224/48137 , H01L2224/4814 , H01L2224/48227 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2224/83 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10158 , H01L2924/12041 , H01L2924/00 , H01L2924/01028 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.
摘要翻译： 发光二极管结构包括二极管区域和二极管区域上的金属堆叠。 金属堆叠包括二极管区域上的阻挡层和阻挡层上的结合层。 阻挡层在结合层和二极管区之间。 结合层包括金，锡和镍。 接合层中锡的重量百分比大于20％，接合层中的金的重量百分数小于约75％。 接合层中镍的重量百分数可以大于10％。
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10.发明授权公开(公告)号：US08698184B2
公开(公告)日：2014-04-15
申请号：US13011417
申请日：2011-01-21
申请人： Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
发明人： Michael John Bergmann , Christopher D. Williams , Kevin Shawne Schneider , Kevin Haberern , Matthew Donofrio
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/40 , H01L33/62 , H01L2224/29144 , H01L2224/32014 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10158 , H01L2924/00014 , H01L2924/0105 , H01L2924/00
摘要： A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.
摘要翻译： 发光二极管芯片，具有第一面和与第一面相对的第二面的支撑层，支撑层的第一面上的二极管区域和支撑层的第二面上的接合焊盘。 接合焊盘包括锡的重量百分比为50％以上的金 - 锡结构。 发光二极管芯片可以包括以电串联连接在发光二极管芯片上的多个有源区域。
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