Batch fabricated semiconductor micro-switch
    1.
    发明授权
    Batch fabricated semiconductor micro-switch 失效
    批量制造半导体微动开关

    公开(公告)号:US5821596A

    公开(公告)日:1998-10-13

    申请号:US822839

    申请日:1997-03-24

    IPC分类号: G01L9/00 H01L29/82 H01L43/00

    摘要: A micro-switch having a flexible conductive membrane which is moved by an external force, such as pressure from an air flow, to establish a connection between contact pads. The conductive membrane is stretched over one or more spacer pads to introduce deformation in the conductive membrane, thereby improving the accuracy and repeatability of the micro-switch. The spacing between the contact pads and the conductive membrane is precisely controlled by controlling the height difference between the spacer pads and the conductive pads. This height difference is determined by one or more precisely controlled etch operations.

    摘要翻译: 具有柔性导电膜的微型开关,其通过外力(例如来自空气流的压力)移动,以在接触垫之间建立连接。 导电膜在一个或多个间隔垫上拉伸以在导电膜中引入变形,从而提高微型开关的精度和重复性。 通过控制间隔垫和导电垫之间的高度差来精确地控制接触垫和导电膜之间的间隔。 该高度差由一个或多个精确控制的蚀刻操作确定。

    Bulk fabricated electromagnetic micro-relays/micro-switches and method
of making same
    2.
    发明授权
    Bulk fabricated electromagnetic micro-relays/micro-switches and method of making same 失效
    散装电磁微继电器/微动开关及其制造方法

    公开(公告)号:US5778513A

    公开(公告)日:1998-07-14

    申请号:US599018

    申请日:1996-02-09

    摘要: A micro-relay has a flexible monocrystalline structure which is moved by an electromagnetic force to establish a connection between relay contact elements. The micro-relay includes a substrate having a magnetic pathway and one or more coils located over the magnetic pathway. A first contact pad is coupled to the substrate. The monocrystalline structure is suspended over the substrate. A second contact pad and pole pieces are coupled to the monocrystalline structure such that the second contact pad is positioned over the first contact pad, and the pole pieces are located over the coils. A current is applied to the coils to generate an electromagnetic force which flexes the monocrystalline structure toward the substrate, thereby causing the second contact pad to touch the first contact pad. In one embodiment, the coils include insulating spacers located adjacent to the innermost and outermost traces to prevent shorting.

    摘要翻译: 微型继电器具有柔性单晶结构,其通过电磁力移动以建立继电器接触元件之间的连接。 微型继电器包括具有磁路径的基板和位于磁路径上方的一个或多个线圈。 第一接触垫耦合到衬底。 单晶结构悬浮在基底上。 第二接触焊盘和极片耦合到单晶结构,使得第二接触焊盘位于第一接触焊盘上方,并且极片位于线圈上方。 对线圈施加电流以产生使单晶结构朝向衬底弯曲的电磁力,从而使第二接触焊盘接触第一接触焊盘。 在一个实施例中,线圈包括邻近最内侧和最外侧迹线的绝缘间隔物,以防止短路。

    Silicon bulk-micromachined electromagnetic fiber-optics bypass microswitch
    3.
    发明授权
    Silicon bulk-micromachined electromagnetic fiber-optics bypass microswitch 有权
    硅体微加工电磁光纤旁路微动开关

    公开(公告)号:US06556737B1

    公开(公告)日:2003-04-29

    申请号:US09705416

    申请日:2000-11-02

    IPC分类号: G02B642

    摘要: A fiber-optic microswitch is disclosed that includes a flexible mirror positioning structure including an outer fixed frame, a movable platform upon which a mirror is formed, and two or more resilient support members (e.g., monocrystalline silicon springs or torsion beams) connecting the movable platform to the fixed frame. Stationary fibers are mounted over the mirror. An electromagnetic drive mechanism is provided for positioning the movable platform relative to the fixed frame. The electromagnetic drive mechanism includes one or more coils formed on a drive substrate mounted under the monocrystalline structure, and one or more pole pieces that are mounted on the movable platform. Currents are selectively applied to the coils to generate attractive electromagnetic forces that pull the pole pieces, thereby causing the movable platform to move (e.g., tilt) relative to the fixed frame, thereby selectively directing light from one fiber to another. Various monocrystalline structures are disclosed.

    摘要翻译: 公开了一种光纤微型开关,其包括柔性反射镜定位结构,其包括外部固定框架,其上形成有反射镜的可移动平台以及连接可移动的两个或更多个弹性支撑构件(例如,单晶硅弹簧或扭力梁) 平台到固定框架。 固定纤维安装在镜子上。 提供电磁驱动机构用于相对于固定框架定位可移动平台。 电磁驱动机构包括形成在安装在单晶结构下的驱动基板上的一个或多个线圈和安装在可移动平台上的一个或多个极片。 电流被选择性地施加到线圈以产生有吸引力的电磁力,其拉动极片,从而使可移动平台相对于固定框架移动(例如倾斜),从而将光从一个光纤选择性地引导到另一个光纤。 公开了各种单晶结构。

    Micromachined acceleration activated mechanical switch and electromagnetic sensor
    4.
    发明授权
    Micromachined acceleration activated mechanical switch and electromagnetic sensor 有权
    微机加速激活机械开关和电磁传感器

    公开(公告)号:US06262463B1

    公开(公告)日:2001-07-17

    申请号:US09349840

    申请日:1999-07-08

    IPC分类号: H01L2714

    摘要: A micro-sensor having have a flexible monocrystalline structure that is moved by an external force. In one embodiment, one or more pole tips are mounted on the monocrystalline structure. The monocrystalline structure is suspended over one or more planar coils such that each pole tip is suspended over a corresponding planar coil. As the monocrystalline structure moves in response to the external force, the pole tips are moved in the coils, thereby changing the inductance or inducing a voltage in the coils. In another variation, a micro-switch includes a lower structural member having a pattern of raised spacer pads that laterally surround a plurality of contact pads. The lower structural member is joined to an upper structural member that includes a frame, a platform located in the frame and a plurality of spring elements which connect the frame to the platform. The upper structural member has a conductive layer formed on its planar lower surface. The lower surface of the frame is affixed to the spacer pads, such that the platform is suspended over the contact pads. An external force applied to the resulting structure causes the spring elements to flex, such that the platform moves toward the lower structural member, thereby placing the conductive layer into contact with the contact pads of the lower structural member.

    摘要翻译: 具有通过外力移动的柔性单晶结构的微传感器。 在一个实施例中,一个或多个极尖安装在单晶结构上。 单晶结构悬挂在一个或多个平面线圈上,使得每个极尖悬挂在相应的平面线圈上。 当单晶结构响应于外力而移动时,极尖在线圈中移动,从而改变电感或引起线圈中的电压。 在另一变型中,微型开关包括具有横向包围多个接触焊盘的凸起间隔垫的图案的下部结构构件。 下结构构件连接到上结构构件,其包括框架,位于框架中的平台和将框架连接到平台的多个弹簧元件。 上部结构构件具有在其平坦的下表面上形成的导电层。 框架的下表面固定到间隔垫上,使得平台悬挂在接触垫上。 施加到所得结构的外力使得弹簧元件弯曲,使得平台向下结构构件移动,从而使导电层与下结构构件的接触垫接触。

    Batch fabricated semiconductor thin-film pressure sensor and method of making same
    5.
    发明授权
    Batch fabricated semiconductor thin-film pressure sensor and method of making same 失效
    批量制造的半导体薄膜压力传感器及其制造方法

    公开(公告)号:US06700174B1

    公开(公告)日:2004-03-02

    申请号:US08937859

    申请日:1997-09-25

    IPC分类号: H01L2984

    摘要: A pressure sensor having a flexible membrane which is moved by an external force, such as pressure from an air flow. The flexible membrane extends over a semiconductor frame having an opening, such that a portion of the flexible membrane extends over the semiconductor frame, and a portion of the flexible membrane extends over the opening. An inherent tensile stress is present in the membrane. One or more strain gage resistors are formed on the portion of the membrane which extends over the opening of the semiconductor frame. The membrane deforms in response to an externally applied pressure. As the membrane deforms, the strain gage resistors elongate, thereby increasing the resistances of these resistors. This change in resistance is measured and used to determine the magnitude of the external pressure. In one embodiment, a Wheatstone bridge circuit is used to translate the change in resistance of the strain gage resistors into a differential voltage.

    摘要翻译: 一种压力传感器,其具有通过外力(例如来自气流的压力)移动的柔性膜。 柔性膜在具有开口的半导体框架上延伸,使得柔性膜的一部分在半导体框架上延伸,并且柔性膜的一部分在开口上延伸。 在膜中存在固有的拉伸应力。 在膜的在半导体框架的开口上延伸的部分上形成一个或多个应变计电阻器。 膜响应于外部施加的压力而变形。 随着膜变形,应变片电阻器延长,从而增加这些电阻的电阻。 测量电阻的这种变化并用于确定外部压力的大小。 在一个实施例中,惠斯登电桥电路用于将应变计电阻器的电阻变化转换为差分电压。

    Process for forming microstructures
    7.
    发明授权
    Process for forming microstructures 有权
    微结构形成工艺

    公开(公告)号:US07271022B2

    公开(公告)日:2007-09-18

    申请号:US11102982

    申请日:2005-04-11

    IPC分类号: H01L21/00 H01L21/4763

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    Process for forming MEMS
    8.
    发明授权
    Process for forming MEMS 有权
    MEMS成型工艺

    公开(公告)号:US07264984B2

    公开(公告)日:2007-09-04

    申请号:US11019912

    申请日:2004-12-21

    IPC分类号: H01L21/44 H01L21/302

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    Process for forming microstructures
    9.
    发明申请
    Process for forming microstructures 有权
    微结构形成工艺

    公开(公告)号:US20060134820A1

    公开(公告)日:2006-06-22

    申请号:US11102982

    申请日:2005-04-11

    IPC分类号: H01L21/00 H01L21/44

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。

    Process for forming MEMS
    10.
    发明申请
    Process for forming MEMS 有权
    MEMS成型工艺

    公开(公告)号:US20060134819A1

    公开(公告)日:2006-06-22

    申请号:US11019912

    申请日:2004-12-21

    IPC分类号: H01L21/00 H01L21/302

    摘要: The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.

    摘要翻译: 本发明涉及一种在基板上形成微观结构的方法。 将电镀表面施加到基板。 将第一层光致抗蚀剂施加在电镀基底上。 第一层光致抗蚀剂以图案暴露于辐射,以使第一层光致抗蚀剂以第一图案溶解。 去除可溶解的光致抗蚀剂,并且在去除第一层光致抗蚀剂的区域中电镀第一层初级金属。 然后除去光致抗蚀剂的其余部分,然后将第二层光致抗蚀剂涂覆在镀覆基底和第一层金属的第一层上。 然后将第二层光致抗蚀剂暴露于第二辐射图案,以使光致抗蚀剂可溶解并除去可溶解的光致抗蚀剂。 第二图案是围绕一次结构的区域,但不包含整个基板。 相反,它是一个围绕着主要金属的岛屿。 然后将次级金属的暴露表面加工到初级金属的期望高度。 然后将二次金属蚀刻掉。