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公开(公告)号：US20080070161A1
公开(公告)日：2008-03-20
申请号：US11852664
申请日：2007-09-10
申请人： Deog-Bae Kim , Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Jae-Hyun Kim
发明人： Deog-Bae Kim , Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Jae-Hyun Kim
IPC分类号： G03C5/00 , C07C309/00 , C08G2/00 , C08G75/00 , G03C1/00
CPC分类号： G03F7/0392 , C07C309/00 , C07C2601/08 , C07C2601/14 , C07C2602/22 , C07C2602/42 , C07C2603/24 , C07C2603/74 , C07D307/32 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
摘要翻译： 公开了包含肟基的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂单体由下式表示。 在式中，R *独立地是氢或甲基，R是具有或不具有醚基的取代或未取代的C 1 -C 25烷基，或 具有或不具有醚基的芳基，杂芳基，环烷基或多环烷基的取代或未取代的C 4〜C 25烃基，酮 组或硫。
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公开(公告)号：US07604919B2
公开(公告)日：2009-10-20
申请号：US11852664
申请日：2007-09-10
申请人： Deog-Bae Kim , Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Jae-Hyun Kim
发明人： Deog-Bae Kim , Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Jae-Hyun Kim
CPC分类号： G03F7/0392 , C07C309/00 , C07C2601/08 , C07C2601/14 , C07C2602/22 , C07C2602/42 , C07C2603/24 , C07C2603/74 , C07D307/32 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： The photoresist monomer including an oxime group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. In Formula, R* is independently a hydrogen or a methyl group, and R is a substituted or unsubstituted C1˜C25 alkyl group with or without an ether group, or a substituted or unsubstituted C4˜C25 hydrocarbon group including an aryl group, a heteroaryl group, a cycloalkyl group or a multicycloalkyl group with or without an ether group, a ketone group or a sulfur.
摘要翻译： 公开了包含肟基的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂单体由下式表示。 在式中，R *独立地是氢或甲基，R是具有或不具有醚基的取代或未取代的C1〜C25烷基，或取代或未取代的C4〜C25烃基，包括芳基，杂芳基 基团，环烷基或具有或不具有醚基的多环烷基，酮基或硫。
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3.发明授权Monomer having sulfonyl group, polymer thereof and photoresist composition including the same 失效具有磺酰基的单体，其聚合物和包含它们的光致抗蚀剂组合物公开(公告)号：US07569325B2
公开(公告)日：2009-08-04
申请号：US11923392
申请日：2007-10-24
申请人： Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Deog-Bae Kim , Jae-Hyun Kim
发明人： Jung-Youl Lee , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03F7/004 , G03F7/30 , C08F226/00 , C07D487/00 , C07C303/28
CPC分类号： G03F7/0392 , C07C309/00 , C07C2601/14 , C07C2602/42 , C07C2603/24 , C07C2603/74 , C07D209/48 , C07D221/06 , C08F12/22 , C08F12/26 , C08F12/30 , C08F12/32 , C08F212/14 , C09D125/18 , G03F7/0045 , Y10S430/106 , Y10S430/111 , C08F212/08
摘要： A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.
摘要翻译： 公开了具有磺酰基的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂单体由下式表示。 其中，R *为氢原子或甲基，R 1和R 2独立地为C 1〜C 20烷基，C 4〜C 20环烷基，C 6〜C 20芳基或C 7〜20芳烷基，R 1和 R2可能不存在，R1和R2可以连接形成环。
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4.发明申请MONOMER HAVING SULFONYL GROUP, POLYMER THEREOF AND PHOTORESIST COMPOSITION INCLUDING THE SAME 失效具有磺基的单体，其聚合物和包括其的光学组合物公开(公告)号：US20080102402A1
公开(公告)日：2008-05-01
申请号：US11923392
申请日：2007-10-24
申请人： Jung-Youl LEE , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Deog-Bae Kim , Jae-Hyun Kim
发明人： Jung-Youl LEE , Geun-Jong Yu , Sang-Jung Kim , Jae-Woo Lee , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C1/73 , C07C309/01 , C07D209/82 , C07D221/06 , C08F12/30
CPC分类号： G03F7/0392 , C07C309/00 , C07C2601/14 , C07C2602/42 , C07C2603/24 , C07C2603/74 , C07D209/48 , C07D221/06 , C08F12/22 , C08F12/26 , C08F12/30 , C08F12/32 , C08F212/14 , C09D125/18 , G03F7/0045 , Y10S430/106 , Y10S430/111 , C08F212/08
摘要： A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.
摘要翻译： 公开了具有磺酰基的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂单体由下式表示。 其中R *是氢原子或甲基，R 1和R 2独立地是C 1 -C 20 C 1 -C 20烷基，C 4 -C 20环烷基，C 6 -C 20环烷基，C 1 -C 20烷基， 芳基或C 7-20芳基烷基，R 1和R 2中的一个可能不存在 ，并且R 1和R 2可以连接形成环。
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公开(公告)号：US07368219B2
公开(公告)日：2008-05-06
申请号：US11312788
申请日：2005-12-20
申请人： Sang-Jung Kim , Jong-Yong Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Jong-Yong Kim , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C1/76
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, R1 is hydrogen or methyl group, and R2 is a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.
摘要翻译： 公开了一种用于在蚀刻层和光致抗蚀剂层之间形成有机抗反射涂层以在光刻工艺中吸收曝光光的聚合物和包含其的组合物。 用于形成有机抗反射涂层的聚合物具有由下式表示的重复单元，其中R 1是氢或甲基，R 2是取代或未取代的， C1至C5的取代烷基。 用于形成有机抗反射涂层的组合物包括具有由上式表示的重复单元的聚合物; 光吸收器 和溶剂。
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公开(公告)号：US07309561B2
公开(公告)日：2007-12-18
申请号：US11366368
申请日：2006-03-02
申请人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C1/76
CPC分类号： G03F7/091
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.
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公开(公告)号：US07282530B2
公开(公告)日：2007-10-16
申请号：US11366765
申请日：2006-03-02
申请人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
CPC分类号： G03F7/091
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.
摘要翻译： 公开了一种用于在蚀刻层和光致抗蚀剂层之间形成有机抗反射涂层以在光刻工艺中吸收曝光光的聚合物和包含其的组合物。 用于形成有机抗反射涂层的聚合物具有由其中R为C1至C5的取代或未取代的烷基表示的重复单元。
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公开(公告)号：US20060199108A1
公开(公告)日：2006-09-07
申请号：US11366765
申请日：2006-03-02
申请人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C1/76
CPC分类号： G03F7/091
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by wherein, R is a substituted or non-substituted alky group of C1 to C5.
摘要翻译： 公开了一种用于在蚀刻层和光致抗蚀剂层之间形成有机抗反射涂层以在光刻工艺中吸收曝光光的聚合物和包含其的组合物。 用于形成有机抗反射涂层的聚合物具有由其中R为C1至C5的取代或未取代的烷基表示的重复单元。
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公开(公告)号：US20060199107A1
公开(公告)日：2006-09-07
申请号：US11366758
申请日：2006-03-02
申请人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C5/00
CPC分类号： G03F7/091
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has repeating units represented by w wherein, R1 is a substituted or non-substituted alky group of C1 to C5.
摘要翻译： 公开了一种用于在蚀刻层和光致抗蚀剂层之间形成有机抗反射涂层以在光刻工艺中吸收曝光光的聚合物和包含其的组合物。 用于形成有机抗反射涂层的聚合物具有由w表示的重复单元，其中R 1是C1至C5的取代或未取代的烷基。
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公开(公告)号：US20060134558A1
公开(公告)日：2006-06-22
申请号：US11312788
申请日：2005-12-20
申请人： Sang-Jung Kim , Jong-Yong Kim , Deog-Bae Kim , Jae-Hyun Kim
发明人： Sang-Jung Kim , Jong-Yong Kim , Deog-Bae Kim , Jae-Hyun Kim
IPC分类号： G03C5/00
摘要： A polymer for forming an organic anti-reflective coating layer between an etching layer and a photoresist layer to absorb an exposure light in a photolithography process and a composition comprising the same are disclosed. The polymer for forming an organic anti-reflective coating layer has a repeating unit represented by wherein, R1 is hydrogen or methyl group, and R2 is a substituted or non-substituted alky group of C1 to C5. The composition for forming the organic anti-reflective coating layer includes the polymer having the repeating unit represented by above Formulas; a light absorber; and a solvent.
摘要翻译： 公开了一种用于在蚀刻层和光致抗蚀剂层之间形成有机抗反射涂层以在光刻工艺中吸收曝光光的聚合物和包含其的组合物。 用于形成有机抗反射涂层的聚合物具有由下式表示的重复单元，其中R 1是氢或甲基，R 2是取代或未取代的， C1至C5的取代烷基。 用于形成有机抗反射涂层的组合物包括具有由上式表示的重复单元的聚合物; 光吸收器 和溶剂。
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