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    METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE
    5.
    发明申请
    METHOD FOR FORMING FINE PATTERN IN SEMICONDUCTOR DEVICE 失效
    在半导体器件中形成精细图案的方法

    公开(公告)号：US20100233622A1

    公开(公告)日：2010-09-16

    申请号：US12618530

    申请日：2009-11-13

    申请人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    发明人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    IPC分类号： G03F7/00 ,  G03C1/00 ,  G03C1/053

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0752 ,  G03F7/70466 ,  H01L21/0273

    摘要： Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

    摘要翻译： 公开了一种使用双曝光图案化工艺制造精细图案的半导体器件的方法，用于通过简单地在没有曝光掩模的情况下曝光来制造第二光致抗蚀剂图案。 该方法包括以下步骤：在半导体衬底上形成第一光致抗蚀剂图案，在其上形成待蚀刻的层; 在第一光致抗蚀剂图案上涂覆用于镜面中间层的组合物以形成镜面中间层; 在所得物上形成光致抗蚀剂层; 以及通过将所述光致抗蚀剂层暴露于能量低于所述光致抗蚀剂层的阈值能量（Eth）的光而形成通过所述镜面 - 中间层的散射反射并且位于所述第一光致抗蚀剂图案之间的第二光致抗蚀剂图案， 没有曝光掩模，然后开发相同。

    Method for forming fine pattern in semiconductor device
    6.
    发明授权
    Method for forming fine pattern in semiconductor device 失效
    在半导体器件中形成精细图案的方法

    公开(公告)号：US08293458B2

    公开(公告)日：2012-10-23

    申请号：US12618530

    申请日：2009-11-13

    申请人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    发明人： Jun-Gyeong Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

    IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/40

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0752 ,  G03F7/70466 ,  H01L21/0273

    摘要： Disclosed is a method for manufacturing fine patterns of semiconductor devices using a double exposure patterning process for manufacturing the second photoresist patterns by simply exposing without an exposure mask. The method comprises the steps of: forming a first photoresist pattern on a semiconductor substrate on which a layer to be etched is formed; coating a composition for a mirror interlayer on the first photoresist pattern to form a mirror interlayer; forming a photoresist layer on the resultant; and forming a second photoresist pattern which is made by a scattered reflection of the mirror-interlayer and positioned between the first photoresist patterns, by exposing the photoresist layer to a light having energy which is lower than a threshold energy (Eth) of the photoresist layer without an exposure mask, and then developing the same.

    摘要翻译： 公开了一种使用双曝光图案化工艺制造精细图案的半导体器件的方法，用于通过简单地在没有曝光掩模的情况下曝光来制造第二光致抗蚀剂图案。 该方法包括以下步骤：在半导体衬底上形成第一光致抗蚀剂图案，在其上形成待蚀刻的层; 在第一光致抗蚀剂图案上涂覆用于镜面中间层的组合物以形成镜面中间层; 在所得物上形成光致抗蚀剂层; 以及通过将所述光致抗蚀剂层暴露于能量低于所述光致抗蚀剂层的阈值能量（Eth）的光而形成通过所述镜面 - 中间层的散射反射并且位于所述第一光致抗蚀剂图案之间的第二光致抗蚀剂图案， 没有曝光掩模，然后开发相同。

    Photoresist monomer polymer thereof and photoresist composition including the same
    8.
    发明授权
    Photoresist monomer polymer thereof and photoresist composition including the same 失效
    其光致抗蚀剂单体聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US07501222B2

    公开(公告)日：2009-03-10

    申请号：US11471838

    申请日：2006-06-21

    申请人： Jung-Youl Lee ,  Jae-Woo Lee ,  Jae-Hyun Kim

    发明人： Jung-Youl Lee ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  C07C69/54 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2602/44 ,  C07C2603/74 ,  C08F220/18 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

    摘要： A polymer including a monomer represented by the following Formula and a photoresist composition including the same are disclosed. The polymer and photoresist composition can improve the resolution and the process margin due to the low activation energy of the deprotection reaction of the alcohol ester group including saturated cyclic hydrocarbyl group, and also can produce fine photoresist patterns because they have a stable PEB(Post Exposure Baking) temperature sensitivity, and further, can improve the focus depth margin and the line edge roughness of the resist layer. In the above Formula, R* is a hydrogen or methyl group, R1 is saturated hydrocarbyl group of 1 to 5 carbon atoms, R is mono-cyclic or multi-cyclic homo or hetero saturated hydrocarbyl group of 3 to 50 carbon atoms, and n is an integer of at least 2.

    摘要翻译： 公开了包含由下式表示的单体的聚合物和包含其的光致抗蚀剂组合物。 聚合物和光致抗蚀剂组合物由于具有饱和环状烃基的醇酯基的脱保护反应的活化能低而能够提高分辨率和工艺余量，并且由于它们具有稳定的PEB（曝光后） 烘烤）温度敏感性，并且还可以提高抗蚀剂层的聚焦深度和线边缘粗糙度。 在上式中，R *为氢或甲基，R 1为1〜5个碳原子的饱和烃基，R为3〜50个碳原子的单环或多环均基或杂饱和烃基，n 是至少为2的整数。

    ACID-AMPLIFIER HAVING ACETAL GROUP AND PHOTORESIST COMPOSITION INCLUDING THE SAME
    9.
    发明申请
    ACID-AMPLIFIER HAVING ACETAL GROUP AND PHOTORESIST COMPOSITION INCLUDING THE SAME 失效
    具有ACETAL组的ACID放大器和包括它们的光电组合物

    公开(公告)号：US20090023093A1

    公开(公告)日：2009-01-22

    申请号：US12174759

    申请日：2008-07-17

    申请人： Jung-Youl Lee ,  Min-Ja Yoo ,  Jeong-Sik Kim ,  Young-Bae Lim ,  Jae-Woo Lee ,  Jae-Hyun Kim

    发明人： Jung-Youl Lee ,  Min-Ja Yoo ,  Jeong-Sik Kim ,  Young-Bae Lim ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03F7/004 ,  C07D317/72

    CPC分类号： C07D317/72 ,  C07D339/06 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/123

    摘要： An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (0) or sulfur atom (S).

    摘要翻译： 公开了具有缩醛基的酸性放大器和包含该缩醛基的光致抗蚀剂组合物。 在曝光过程中，酸放大器在曝光前烘烤（PEB）中产生酸（第二酸），其由在光生酸发生器（PAG）产生的酸（第一酸）诱导，使得线 改善了光致抗蚀剂图案的边缘粗糙度（LER）和光致抗蚀剂的能量灵敏度。 酸式放大器在式1中具有下式1的结构，R为C 4〜C 20单环或多环饱和烃，R 1为C 1〜C 10直链烃，C 1〜C 10全氟化合物或C 5〜C 20芳族化合物 ，Ra和Rb独立地为氢原子或C1〜C4饱和烃，A独立地为氧原子（O）或硫原子（S）。

    Photosensitive molecular compound and photoresist composition including the same
    10.
    发明授权
    Photosensitive molecular compound and photoresist composition including the same 失效
    光敏分子化合物和包含其的光致抗蚀剂组合物

    公开(公告)号：US08124311B2

    公开(公告)日：2012-02-28

    申请号：US12361833

    申请日：2009-01-29

    申请人： Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Jae-Hyun Kim

    发明人： Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Woo Lee ,  Jae-Hyun Kim

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/38

    CPC分类号： C07C251/68 ,  C07C2601/14 ,  C07C2603/74 ,  C07C2603/92 ,  C07D209/48 ,  C07D209/86 ,  C07D221/14 ,  G03F7/0045 ,  G03F7/039

    摘要： Disclosed are a photosensitive compound containing oxime group which is directly decomposed by exposure to light, which is a molecular resist whose size is smaller than conventional polymer for photoresist, and a photoresist composition including the same. The photosensitive molecular compound has a structure represented by a following formula. In Formula, R1 is hydrogen atom or methyl group (CH3); Ra and Rb each is independently alkyl group of 1-6 carbon atoms, alkylcarbonyl group of 2-7 carbon atoms, aryl group of 6-10 carbon atoms or arylcarbonyl group of 7-11 carbon atoms, and Ra and Rb form one group as an united body, alkyl or cycloalkyl group of 1-20 carbon atoms or arylalkyl group of 7-20 carbon atoms which are doubly bonded to nitrogen atom.

    摘要翻译： 公开了含有肟基的感光性化合物，其通过暴露于光直接分解，其是尺寸小于用于光致抗蚀剂的常规聚合物的分子抗蚀剂，以及包含其的光致抗蚀剂组合物。 光敏分子化合物具有由下式表示的结构。 在式中，R 1是氢原子或甲基（CH 3）; Ra和Rb各自独立地为1-6个碳原子的烷基，2-7个碳原子的烷基羰基，6-10个碳原子的芳基或7-11个碳原子的芳基羰基，Ra和Rb形成一个基团 1〜20个碳原子的烷基或环烷基或7-20个碳原子的芳基烷基与氮原子双键结合。