Broad spectrum surface-emitting led
    1.
    发明授权
    Broad spectrum surface-emitting led 失效
    广谱表面发射LED

    公开(公告)号:US5563900A

    公开(公告)日:1996-10-08

    申请号:US287820

    申请日:1994-08-09

    摘要: A surface emitting light emitting device with a semiconducting substrate, a semiconducting mirror stack positioned on the substrate surface, a spacer layer positioned on the mirror stack, an active region positioned on the spacer layer, a second spacer layer positioned on the active region, a second semiconducting mirror stack positioned on the second spacer layer, and a top contact layer positioned in contact with the second semiconducting mirror stack. The active region includes multiple quantum wells each having a different transition wavelength and positioned on the spacer layer with the quantum well possessing the longest transition wavelength located closest to the spacer layer and additional quantum wells of the multiple quantum wells positioned in order of decreasing transition wavelength so that the sum of the emission from all of the quantum wells results in a broad and uniform output emission spectrum.

    摘要翻译: 具有半导体衬底的表面发射发光器件,位于衬底表面上的半导体反射镜叠层,位于反射镜叠层上的间隔层,位于间隔层上的有源区,位于有源区上的第二间隔层, 位于第二间隔层上的第二半导体反射镜叠层和与第二半导体反射镜叠层定位接触的顶部接触层。 有源区包括多个量子阱,每个量子阱具有不同的跃迁波长并且位于间隔层上,其中量子阱具有位于最靠近间隔层的最长过渡波长,并且多个量子阱的额外量子阱按照降低的跃迁波长 使得来自所有量子阱的发射的总和导致宽而均匀的输出发射光谱。

    Vertical cavity surface emitting laser with lateral injection
    2.
    发明授权
    Vertical cavity surface emitting laser with lateral injection 失效
    垂直腔表面发射激光与侧向注射

    公开(公告)号:US5164949A

    公开(公告)日:1992-11-17

    申请号:US756695

    申请日:1991-09-09

    IPC分类号: H01S5/00 H01S5/183

    摘要: A planar semiconductor laser having low thermal and series resistance is fabricated. The semiconductor laser has an optical waveguide and a lateral current injection path provided by a conductive region. The conductive region disorders the active region and the first 1/4 wave stack of the laser, which reduces the reflectivity, therefore allowing control of the optical waveguide independent of the current flow. By forming the conductive region, the laser of the present invention can have stable optical characteristics and a bigger emission spot due to the weak built-in waveguide, thus resulting in the formation of a device having high output and a low thermal and series resistance.

    摘要翻译: 制造具有低热阻和串联电阻的平面半导体激光器。 半导体激光器具有由导电区域提供的光波导和横向电流注入路径。 导电区域会扰乱激光器的有源区和第一1/4波长叠层,从而降低了反射率,从而允许独立于电流的光波导的控制。 通过形成导电区域,本发明的激光器由于内置波导较弱,可以具有稳定的光学特性和更大的发光点,从而形成具有高输出和低热阻和串联电阻的器件。

    Integrated HBT and VCSEL structure and method of fabrication
    3.
    发明授权
    Integrated HBT and VCSEL structure and method of fabrication 失效
    集成HBT和VCSEL结构及其制造方法

    公开(公告)号:US5216686A

    公开(公告)日:1993-06-01

    申请号:US829656

    申请日:1992-02-03

    IPC分类号: H01L27/15 H01S5/026 H01S5/183

    摘要: A vertical cavity surface emitting laser (VCSEL), comprised of a first 1/4 wave stack, an active layer and a second 1/4 wave stack, is integrated with a heterojunction bipolar transistor (HBT). The HBT is partially or fully positioned within either the first or the second 1/4 wave stack of the VCSEL. This method improves the planarity of the device, thus allowing for high performance devices to be fabricated. A top or bottom emitting device may be fabricated with the second 1/4 wave stack comprised of dielectric layers or semiconductor epitaxial layers.

    摘要翻译: 由异质结双极晶体管(HBT)集成了由第一1/4波长叠层,有源层和第二1/4波长叠层组成的垂直腔表面发射激光器(VCSEL)。 HBT部分或完全定位在VCSEL的第一个或第二个1/4波形堆叠中。 该方法提高了器件的平面性,从而可以制造高性能器件。 顶部或底部发射器件可以由包括电介质层或半导体外延层的第二1/4波长叠层制造。

    Method of growing gallium nitride on a spinel substrate
    4.
    发明授权
    Method of growing gallium nitride on a spinel substrate 失效
    在尖晶石衬底上生长氮化镓的方法

    公开(公告)号:US5741724A

    公开(公告)日:1998-04-21

    申请号:US774819

    申请日:1996-12-27

    摘要: A method of growing gallium nitride on a spinel substrate by providing a supporting substrate having a surface, and disposing a plurality of buffer layers on the surface of the supporting substrate. The plurality of buffer layers including a first buffer layer of aluminum oxynitride having a low percentage of mismatch to the spinel substrate. The second buffer layer is disposed on the first buffer layer and includes a plurality of layers of a graded aluminum oxynitride having a low dislocation density. A third buffer layer of aluminum nitride is disposed on the second buffer layer. A fourth buffer layer of gallium nitride is disposed on the third buffer layer. Subsequently, a photonic device structure, such as a laser, LED or detector, an electronic device structure, such as a field effect transistor or modulation doped field effect transistor, or an optical waveguide is fabricated on the fourth buffer layer.

    摘要翻译: 一种通过提供具有表面的支撑衬底在尖晶石衬底上生长氮化镓的方法,并且在支撑衬底的表面上设置多个缓冲层。 多个缓冲层包括与尖晶石衬底失配百分比低的氮氧化铝的第一缓冲层。 第二缓冲层设置在第一缓冲层上,并且包括具有低位错密度的多层梯度的氮氧化铝。 氮化铝的第三缓冲层设置在第二缓冲层上。 氮化镓的第四缓冲层设置在第三缓冲层上。 随后,在第四缓冲层上制造诸如激光,LED或检测器之类的光子器件结构,诸如场效应晶体管或调制掺杂场效应晶体管的电子器件结构或光波导。

    Sensor package including a magnetic field sensor and a continuous coil structure for enabling z-axis self-test capability

    公开(公告)号:US09720051B2

    公开(公告)日:2017-08-01

    申请号:US14290040

    申请日:2014-05-29

    IPC分类号: G01R33/09 G01R33/00 G01R35/00

    摘要: A magnetic field sensor includes in-plane sense elements located in a plane of the magnetic field sensor and configured to detect a magnetic field oriented perpendicular to the plane. A current carrying structure is positioned proximate the magnetic field sensor and includes at least one coil surrounding the in-plane sense elements. An electric current is applied to the coil to create a self-test magnetic field to be sensed by the sense elements. The coil may be vertically displaced from the plane in which the sense elements are located and laterally displaced from an area occupied by the sense elements to produce both Z-axis magnetic field components and lateral magnetic field components of the self-test magnetic field. The sense elements are arranged within the coil and interconnected to cancel the lateral magnetic field components, while retaining the Z-axis magnetic field components to be used for self-test of the magnetic field sensor.

    Sensor packaging method and sensor packages
    6.
    发明授权
    Sensor packaging method and sensor packages 有权
    传感器封装方法和传感器封装

    公开(公告)号:US08659167B1

    公开(公告)日:2014-02-25

    申请号:US13597824

    申请日:2012-08-29

    IPC分类号: H01L29/84

    摘要: A method (80) entails providing (82) a structure (117), providing (100) a controller element (102, 24), and bonding (116) the controller element to an outer surface (52, 64) of the structure. The structure includes a sensor wafer (92) and a cap wafer (94). Inner surfaces (34, 36) of the wafers (92, 94) are coupled together, with sensors (30) interposed between the wafers. One wafer (94, 92) includes a substrate portion (40, 76) with bond pads (42) formed on its inner surface (34, 36). The other wafer (94, 92) conceals the substrate portion (40, 76). After bonding, methodology (80) entails forming (120) conductive elements (60) on the element (102, 24), removing (126) material sections (96, 98, 107) from the wafers to expose the bond pads, forming (130) electrical interconnects (56), applying (134) packaging material (64), and singulating (138) to produce sensor packages (20, 70).

    摘要翻译: 方法(80)需要提供(82)结构(117),提供(100)控制器元件(102,24),并将控制器元件(116)结合(116)到结构的外表面(52,64)。 该结构包括传感器晶片(92)和盖晶片(94)。 晶片(92,94)的内表面(34,36)被耦合在一起,传感器(30)置于晶片之间。 一个晶片(94,92)包括具有形成在其内表面(34,36)上的接合焊盘(42)的衬底部分(40,76)。 另一个晶片(94,92)隐藏基板部分(40,76)。 在结合之后,方法学(80)需要在元件(102,24)上形成(120)导电元件(60),从晶片去除(126)材料部分(96,98,107)以暴露接合焊盘,形成 130)电互连(56),施加(134)包装材料(64)和单分离(138)以产生传感器封装(20,70)。

    SENSING DEVICE AND RELATED OPERATING METHODS
    7.
    发明申请
    SENSING DEVICE AND RELATED OPERATING METHODS 有权
    感应装置及相关操作方法

    公开(公告)号:US20130335065A1

    公开(公告)日:2013-12-19

    申请号:US13523675

    申请日:2012-06-14

    IPC分类号: G01R33/00 G01R35/00

    摘要: Apparatus, systems, and methods are provided for sensing devices. An exemplary sensing device includes a sensing arrangement on a substrate to sense a first property, a heating arrangement, and a control system coupled to the first sensing arrangement and the heating arrangement to activate the heating arrangement to heat the first sensing arrangement and deactivate the heating arrangement while obtaining one or more measurement values for the first property from the first sensing arrangement.

    摘要翻译: 提供了用于感测装置的装置,系统和方法。 一种示例性感测装置包括:感测装置,用于感测第一属性的基板上的感测装置,加热装置和耦合到第一感测装置和加热装置的控制系统,以激活加热装置以加热第一感测装置并使加热失效 同时从第一感测装置获得用于第一属性的一个或多个测量值。

    APPARATUS AND RECOGNITION METHOD FOR CAPTURING EAR BIOMETRIC IN WIRELESS COMMUNICATION DEVICES
    8.
    发明申请
    APPARATUS AND RECOGNITION METHOD FOR CAPTURING EAR BIOMETRIC IN WIRELESS COMMUNICATION DEVICES 审中-公开
    用于在无线通信设备中捕获远端生物量的装置和识别方法

    公开(公告)号:US20080285813A1

    公开(公告)日:2008-11-20

    申请号:US11747985

    申请日:2007-05-14

    申请人: Paige M. Holm

    发明人: Paige M. Holm

    IPC分类号: G06K9/00

    CPC分类号: G06K9/00013 G06K9/00885

    摘要: An apparatus and method is provided for recognizing ear biometrics of an approved user of a wireless device. The apparatus comprises a wireless communication device (50) including a first biometric device (52) for assessing the identity of the user, the biometric device (52) comprising a touch input display (52) including a plurality of pixels for providing a visual output, and a plurality of sensors (84), one each being incorporated within one of the plurality of pixels (82), for recording at least a partial image of a user's ear (10) when the touch input display (52) is placed against an ear (10) of the user in a first mode and for receiving an input in response to being touched by the user in a second mode. A controller (120) is coupled to the first biometric device (52) in the first mode, wherein the controller (120) enables the function when the identity of the user is verified by the first biometric device (52). Additional biometric devices may be included wherein a positive response from one of the biometric devices enables the function of the wireless device.

    摘要翻译: 提供了一种用于识别无线设备的认可用户的耳朵生物特征的装置和方法。 该装置包括无线通信设备(50),该无线通信设备包括用于评估用户身份的第一生物测定设备(52),所述生物测定设备(52)包括触摸输入显示器(52),所述触摸输入显示器包括用于提供视觉输出的多个像素 ,以及多个传感器(84),每个传感器(84)被并入在所述多个像素(82)中的一个内,用于当所述触摸输入显示器(52)被放置在所述多个像素(82)中时,用于记录用户耳朵(10)的至少部分图像 用户的耳朵(10)处于第一模式,并且响应于在第二模式中被用户触摸而接收输入。 控制器(120)在第一模式下耦合到第一生物测定装置(52),其中当用户的身份被第一生物测定装置(52)验证时,控制器(120)启用该功能。 可以包括附加的生物测定装置,其中来自生物测定装置之一的肯定响应使得无线装置的功能成为可能。

    Structure and method for fabricating semiconductor microresonator devices
    9.
    发明授权
    Structure and method for fabricating semiconductor microresonator devices 有权
    制造半导体微谐振器器件的结构和方法

    公开(公告)号:US06965128B2

    公开(公告)日:2005-11-15

    申请号:US10356549

    申请日:2003-02-03

    CPC分类号: H01L27/0605 H01L21/8258

    摘要: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.

    摘要翻译: 通过形成用于生长单晶层的顺应性衬底,可以将单晶材料(26)的高质量外延层生长成覆盖在单晶衬底(22)如大硅晶片上。 容纳缓冲层(24)包括通过氧化硅的非晶界面层(28)与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外,顺应性衬底的形成可以包括利用表面活性剂增强的单晶硅在单晶氧化物材料上的外延和外延生长。 在单晶衬底上形成微谐振器器件。 部分或整个微谐振器装置也可以过度地容纳缓冲层或单晶材料层。

    Method of manufacture of active matrix LED array
    10.
    发明授权
    Method of manufacture of active matrix LED array 失效
    有源矩阵LED阵列的制造方法

    公开(公告)号:US5893721A

    公开(公告)日:1999-04-13

    申请号:US823382

    申请日:1997-03-24

    IPC分类号: H01L27/15 H01L27/32 H01L33/00

    CPC分类号: H01L27/3276 H01L27/156

    摘要: A method of fabricating an active matrix LED array includes forming layers of material on a substrate, which layers cooperate to emit light when activated. Row and column dividers are formed in the layers to divide the layers into an array of LEDs arranged in rows and columns. One FET is formed on the row dividers in association with each LED and a source of each FET is connected to an anode of the associated LED. Row and column buses are formed on the row and column dividers, respectively, and the drain of each FET is connected to an adjacent row bus with the gate of each FET being connected to an adjacent column bus. A cathode for each LED is connected as a common terminal for all of the LEDs in the array.

    摘要翻译: 制造有源矩阵LED阵列的方法包括在衬底上形成材料层,这些层在激活时协同发光。 行和列分隔器形成在层中以将层划分成以行和列布置的LED阵列。 一个FET与每个LED相关联地在行分隔器上形成,并且每个FET的源极连接到相关联的LED的阳极。 行和列总线分别形成在行和列分频器上,并且每个FET的漏极连接到相邻的行总线,每个FET的栅极连接到相邻的列总线。 每个LED的阴极作为阵列中的所有LED的公共端子连接。