FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH
    6.
    发明申请
    FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH 失效
    使用选择性重制的浮动护环的制造

    公开(公告)号:US20130164893A1

    公开(公告)日:2013-06-27

    申请号:US13335355

    申请日:2011-12-22

    IPC分类号: H01L21/337 H01L21/20

    摘要: A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

    摘要翻译: 一种用于制造氮化镓(GaN)材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底,形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分,以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

    Fabrication of floating guard rings using selective regrowth
    9.
    发明授权
    Fabrication of floating guard rings using selective regrowth 失效
    使用选择性再生长制造浮动护环

    公开(公告)号:US08592298B2

    公开(公告)日:2013-11-26

    申请号:US13335355

    申请日:2011-12-22

    IPC分类号: H01L21/3205

    摘要: A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.

    摘要翻译: 一种用于制造氮化镓(GaN)材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底,形成耦合到n型GaN的第一表面的n型GaN外延层 并且形成耦合到n型GaN外延层的生长掩模。 该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分,以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。 所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。 该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

    Ingan ohmic source contacts for vertical power devices
    10.
    发明授权
    Ingan ohmic source contacts for vertical power devices 有权
    用于垂直功率器件的Ingan欧姆源触点

    公开(公告)号:US09006800B2

    公开(公告)日:2015-04-14

    申请号:US13326192

    申请日:2011-12-14

    摘要: A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

    摘要翻译: 垂直III族氮化物场效应晶体管包括:包含第一III族氮化物材料的漏极,与漏极电耦合的漏极接触点;以及漂移区域,包括耦合到漏极并邻近漏极设置的第二III族氮化物材料 垂直方向 场效应晶体管还包括沟道区,该沟道区包括耦合到漂移区的第三III族氮化物材料,至少部分围绕沟道区的栅极区和电耦合到栅极区的栅极接触。 场效应晶体管还包括耦合到沟道区的源极。 源包括耦合到InGaN层的GaN层。 沟道区域沿着垂直方向设置在漏极和源极之间,使得垂直III族氮化物场效应晶体管的工作期间的电流沿垂直方向。