公开(公告)号：US08685772B2

公开(公告)日：2014-04-01

申请号：US13344298

申请日：2012-01-05

申请人： Dong Ju Lee ,  Heon Ho Lee ,  Hyun Wook Shim ,  Young Sun Kim

发明人： Dong Ju Lee ,  Heon Ho Lee ,  Hyun Wook Shim ,  Young Sun Kim

IPC分类号： H01L33/02

CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01L33/32

摘要： There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.

摘要翻译： 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层和未掺杂的氮化物半导体层; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。

公开(公告)号：US20130009192A1

公开(公告)日：2013-01-10

申请号：US13368043

申请日：2012-02-07

申请人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

发明人： Hyun Wook Shim ,  Dong Ju Lee ,  Dong Ik Shin ,  Young Sun Kim ,  Makoto Asai ,  Yu Ri Sohn

IPC分类号： H01L33/30

CPC分类号： H01L33/025 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40

摘要： Provided is a nitride semiconductor light emitting device including p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer formed therebetween. A contact layer is positioned between the p-type nitride semiconductor layer and a p-side electrode. The contact layer includes a first p-type nitride layer having a first impurity concentration to form ohmic contact with the p-side electrode and a second p-type nitride layer having a second impurity concentration, the second impurity concentration having a concentration lower than the first impurity concentration.

摘要翻译： 提供了包括p型氮化物半导体层，n型氮化物半导体层和在它们之间形成的有源层的氮化物半导体发光器件。 接触层位于p型氮化物半导体层和p侧电极之间。 接触层包括具有第一杂质浓度以与p侧电极欧姆接触的第一p型氮化物层和具有第二杂质浓度的第二p型氮化物层，第二杂质浓度的浓度低于 第一杂质浓度。

公开(公告)号：US20130026446A1

公开(公告)日：2013-01-31

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon HAN ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/04 ,  H01L33/60

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US08575593B2

公开(公告)日：2013-11-05

申请号：US13557915

申请日：2012-07-25

申请人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

发明人： Sang Heon Han ,  Jong Hyun Lee ,  Jin Young Lim ,  Dong Ju Lee ,  Heon Ho Lee ,  Young Sun Kim ,  Sung Tae Kim

IPC分类号： H01L33/32

CPC分类号： H01L33/06 ,  H01L33/32

摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: first and second conductivity-type semiconductor layers; and an active layer disposed between the first and second conductivity-type semiconductor layers and having a structure in which a quantum barrier layer and a quantum well layer are alternately disposed, and the quantum barrier layer includes first and second regions disposed in order of proximity to the first conductivity-type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括：第一和第二导电型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有其中交替地设置量子势垒层和量子阱层的结构的有源层，并且量子势垒层包括按照接近于...的顺序设置的第一和第二区域 第一导电型半导体层。

公开(公告)号：US20140103359A1

公开(公告)日：2014-04-17

申请号：US14125878

申请日：2011-07-28

申请人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

发明人： Hyun Wook Shim ,  Sang Heon Han ,  Jae Woong Han ,  Dong Chul Shin ,  Je Won Kim ,  Dong Ju Lee

IPC分类号： H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/20 ,  H01L33/24

摘要： A semiconductor light emitting device having enhanced luminous efficiency and a manufacturing method thereof are provided. The semiconductor light emitting device includes: an n-type semiconductor layer having at least one pit formed in an upper surface thereof; an active layer formed on the n-type semiconductor layer, a region of the active layer corresponding to the pit having an upper surface bent along the pit; and a p-type semiconductor layer formed on the active layer, a region of the p-type semiconductor layer corresponding to the pit having an upper surface bent along the bent portion of the active layer.

摘要翻译： 提供了一种具有增强的发光效率的半导体发光器件及其制造方法。 半导体发光器件包括：在其上表面中形成有至少一个凹坑的n型半导体层; 形成在所述n型半导体层上的有源层，与所述凹坑对应的所述有源层的沿着所述凹坑弯曲的上表面的区域; 以及形成在有源层上的p型半导体层，p型半导体层对应于具有沿着有源层的弯曲部分弯曲的上表面的凹坑的区域。

公开(公告)号：US07462876B2

公开(公告)日：2008-12-09

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US20070145406A1

公开(公告)日：2007-06-28

申请号：US11584503

申请日：2006-10-23

申请人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

发明人： Sang Heon Han ,  Bang Won Oh ,  Je Won Kim ,  Hyun Wook Shim ,  Joong Seo Kang ,  Dong Ju Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/32

摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.

摘要翻译： 本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。 发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极 半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。 中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

公开(公告)号：US20120104432A1

公开(公告)日：2012-05-03

申请号：US13223902

申请日：2011-09-01

申请人： Hyun Wook SHIM ,  Dong Ju Lee ,  Sung Tae Kim

发明人： Hyun Wook SHIM ,  Dong Ju Lee ,  Sung Tae Kim

IPC分类号： H01L33/42

CPC分类号： H01L33/42

摘要： A semiconductor light emitting device includes: a semiconductor light emission stacked body including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the first and second conductive semiconductor layers; and a highly conductive transparent electrode formed on at least one of the first and second conductive semiconductor layers and including a transparent electrode layer formed of at least one of a transparent conductive oxide layer and a transparent conductive nitride and a graphene layer allowing light within the visible spectrum to be transmitted therethrough, the transparent electrode layer and the graphene layer being stacked.

摘要翻译： 一种半导体发光器件包括：半导体发光层叠体，包括第一导电半导体层，第二导电半导体层和位于第一和第二导电半导体层之间的有源层; 以及形成在第一和第二导电半导体层中的至少一个上的高导电性透明电极，并且包括由透明导电氧化物层和透明导电氮化物中的至少一种形成的透明电极层和允许可见光内的光的石墨烯层 要透射的光谱，透明电极层和石墨烯层被堆叠。

公开(公告)号：US20120322191A1

公开(公告)日：2012-12-20

申请号：US13493342

申请日：2012-06-11

申请人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

发明人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

IPC分类号： H01L33/06

CPC分类号： H01L33/0079

摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。

公开(公告)号：US08709839B2

公开(公告)日：2014-04-29

申请号：US13493342

申请日：2012-06-11

申请人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

发明人： Jong Hyun Lee ,  Dong Ju Lee ,  Young Sun Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079

摘要： There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层，有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离，从而可以防止发光结构在其分离时的损坏和劣化。