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    FLOW INDICATOR AND APPARATUS FOR MONITORING PARTICLES IN AIR
    2.
    发明申请
    FLOW INDICATOR AND APPARATUS FOR MONITORING PARTICLES IN AIR 审中-公开
    流量指示器和用于监测空气中颗粒的装置

    公开(公告)号：US20080028869A1

    公开(公告)日：2008-02-07

    申请号：US11765639

    申请日：2007-06-20

    申请人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jae-Han Koo

    发明人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jae-Han Koo

    IPC分类号： G01F1/05

    CPC分类号： G01N1/24 ,  G01F1/20 ,  G01F1/22 ,  G01F1/28 ,  G01N2001/2223 ,  G01N2001/2285 ,  G01N2015/1486

    摘要： A flow indicator is disclosed and includes a horizontally disposed housing having a lower cap with a lower inlet port drawing in an air sample, an interior space passing the air sample, an upper cap having an upper outlet port exhausting the air sample, and a transparent tube coupled between the lower and upper caps and functioning as a transparent window allowing visual observation of at least a portion of the interior space. The flow indicator also includes a floater disposed within the housing and moving vertically in response to the flow of the air sample to indicate a flow rate for the air sample.

    摘要翻译： 流量指示器被公开，并且包括水平设置的壳体，其具有下盖，其具有在空气样品中绘制的下入口端口，通过空气样品的内部空间，具有排出空气样品的上出口的上盖，以及透明 管连接在下盖和上盖之间并用作透明窗口，允许目视观察内部空间的至少一部分。 流量指示器还包括设置在壳体内并且响应于空气样本的流动而垂直移动以指示空气样本的流量的浮子。

    FLOW INDICATOR AND APPARATUS FOR MONITORING PARTICLES IN AIR
    3.
    发明申请
    FLOW INDICATOR AND APPARATUS FOR MONITORING PARTICLES IN AIR 审中-公开
    流量指示器和用于监测空气中颗粒的装置

    公开(公告)号：US20070240503A1

    公开(公告)日：2007-10-18

    申请号：US11765636

    申请日：2007-06-20

    申请人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jae-Han Koo

    发明人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jae-Han Koo

    IPC分类号： G01F15/00

    CPC分类号： G01N1/24 ,  G01F1/20 ,  G01F1/22 ,  G01F1/28 ,  G01N2001/2223 ,  G01N2001/2285 ,  G01N2015/1486

    摘要： A flow indicator includes a horizontally disposed housing having a lower inlet port drawing in an air sample, an interior space passing the air sample, an upper outlet port exhausting the air sample, and a transparent window allowing visual observation of at least a portion of the interior space. The flow indicator also includes a floater disposed within the housing to move vertically in response to the flow of the air sample to indicate a flow rate for the air sample, and a guide member extending upward from a lower portion of the housing and guiding movement of the floater.

    摘要翻译： 流量指示器包括水平设置的壳体，其具有在空气样本中绘制的下部入口端口，通过空气样本的内部空间，排出空气样本的上部出口端口和允许目视观察至少一部分 内部空间。 流量指示器还包括设置在壳体内的浮子，以响应于空气样本的流动而垂直移动以指示空气样本的流量，以及从壳体的下部向上延伸的引导构件，并且引导运动 浮子。

    Particle adsorption chamber, sampling apparatus having a particle adsorption chamber, and sampling method using the same
    5.
    发明申请
    Particle adsorption chamber, sampling apparatus having a particle adsorption chamber, and sampling method using the same 审中-公开
    颗粒吸附室，具有颗粒吸附室的取样装置，以及采用该吸附室的采样方法

    公开(公告)号：US20070107495A1

    公开(公告)日：2007-05-17

    申请号：US11595976

    申请日：2006-11-13

    申请人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jung-Hee Na ,  Gung-Hang Ryu

    发明人： Dong-Hyun Kim ,  Bok-Seok Yang ,  Do-Hyun Cho ,  Hwan-Ki Choi ,  Jung-Hee Na ,  Gung-Hang Ryu

    IPC分类号： G01N19/10 ,  G01N1/22

    CPC分类号： G01N15/0272

    摘要： A particle adsorption device includes a chamber having an inlet and an outlet by which air can pass through the chamber, a support for supporting an adsorbent plate in the chamber, and at least one porous plate disposed in the chamber to control the air flow through the chamber and over a surface of the adsorbent plate. A sampling apparatus includes a particle counter which has a detector that is operative to count particles of a certain size contained in the air, the particle adsorption device, and a probe by which a sample of air is sequentially or selectively fed to the particle adsorption device and the particle counter. Thus, in a method for use in monitoring a manufacturing environment for potential contamination, particles of a certain size in the air can be counted, and particles in the air can be collected on the surface of the adsorbent plate. The collected particles can be analyzed to determine their shape and composition. Te source of the particles can be traced from data produced using the sampling apparatus.

    摘要翻译： 颗粒吸附装置包括具有入口和出口的室，空气可以通过该室，用于在室中支撑吸附板的支撑件和设置在室中的至少一个多孔板，以控制通过所述室的空气流 并且在吸附板的表面上方。 采样装置包括具有检测器的颗粒计数器，该检测器用于对包含在空气中的一定尺寸的颗粒进行计数，颗粒吸附装置以及将空气样品依次或选择性地供给至颗粒吸附装置的探针 和粒子计数器。 因此，在用于监测潜在污染的制造环境的方法中，可以对空气中的一定尺寸的颗粒进行计数，并且可以在吸附剂板的表面上收集空气中的颗粒。 可以分析收集的颗粒以确定它们的形状和组成。 可以使用采样装置产生的数据追踪颗粒的Te源。

    Non-volatile memory devices including first and second blocking layer patterns
    8.
    发明授权
    Non-volatile memory devices including first and second blocking layer patterns 有权
    包括第一和第二阻挡层图案的非易失性存储器件

    公开(公告)号：US08530954B2

    公开(公告)日：2013-09-10

    申请号：US12491529

    申请日：2009-06-25

    申请人： Dong-Hyun Kim ,  Chang-Jin Kang

    发明人： Dong-Hyun Kim ,  Chang-Jin Kang

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28282

    摘要： Non-volatile memory devices include a tunnel insulating layer on a channel region of a substrate, a charge-trapping layer pattern on the tunnel insulating layer and a first blocking layer pattern on the charge-trapping layer pattern. Second blocking layer patterns are on the tunnel insulating layer proximate sidewalls of the charge-trapping layer pattern. The second blocking layer patterns are configured to limit lateral diffusion of electrons trapped in the charge-trapping layer pattern. A gate electrode is on the first blocking layer pattern. The second blocking layer patterns may prevent lateral diffusion of the electrons trapped in the charge-trapping layer pattern.

    摘要翻译： 非易失性存储器件包括在衬底的沟道区上的隧道绝缘层，隧道绝缘层上的电荷俘获层图案和电荷俘获层图案上的第一阻挡层图案。 第二阻挡层图案位于邻近电荷俘获层图案侧壁的隧道绝缘层上。 第二阻挡层图案被配置为限制捕获在电荷俘获层图案中的电子的横向扩散。 栅电极位于第一阻挡层图案上。 第二阻挡层图案可以防止捕获在电荷俘获层图案中的电子的横向扩散。

    Contact structures and semiconductor devices including the same
    9.
    发明授权
    Contact structures and semiconductor devices including the same 有权
    接触结构和包括其的半导体器件

    公开(公告)号：US08378497B2

    公开(公告)日：2013-02-19

    申请号：US12758946

    申请日：2010-04-13

    申请人： Seong-Goo Kim ,  Hyeong-Sun Hong ,  Dong-Hyun Kim ,  Nam-Jung Kang

    发明人： Seong-Goo Kim ,  Hyeong-Sun Hong ,  Dong-Hyun Kim ,  Nam-Jung Kang

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L29/4236 ,  H01L21/76829 ,  H01L21/76897 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10876

    摘要： Methods of forming a contact structure in a semiconductor device include providing a semiconductor substrate including active regions and word lines crossing the active regions. A first interlayer dielectric layer is formed on the semiconductor substrate. Direct contact plugs are formed extending through the first interlayer dielectric layer to contact selected ones of the active regions. Bit line structures are formed on the first interlayer dielectric layer and crossing the word lines that are coupled to the selected ones of the active regions by the direct contact plugs. A second interlayer dielectric layer is formed on the semiconductor substrate including the bit line structures. Barrier patterns are formed extending in parallel with bit line structures and into the second interlayer dielectric layer. Mask patterns are formed overlying an entirety of top surfaces of the direct contact plugs on the second interlayer dielectric layer and the bit line structures. The second and first interlayer dielectric layers are etched using the mask patterns, the barrier patterns and the bit line structures as an etching mask to form buried contact holes and buried contact plugs are formed in the buried contact holes.

    摘要翻译： 在半导体器件中形成接触结构的方法包括提供包括有源区和跨越有源区的字线的半导体衬底。 在半导体衬底上形成第一层间电介质层。 形成延伸穿过第一层间电介质层的直接接触插塞以接触所选择的有源区域。 位线结构形成在第一层间电介质层上并且通过直接接触插塞与被选择的有源区域耦合的字线交叉。 在包括位线结构的半导体衬底上形成第二层间电介质层。 阻挡层图案形成为与位线结构平行延伸并进入第二层间电介质层。 掩模图形形成在第二层间介质层上的直接接触插塞的整个顶表面和位线结构上。 使用掩模图案蚀刻第二和第一层间电介质层，将掩模图案和位线结构作为蚀刻掩模形成埋入的接触孔，并且在埋入的接触孔中形成掩埋的接触插塞。

    Virtual measuring device and method
    10.
    发明授权
    Virtual measuring device and method 有权
    虚拟测量装置及方法

    公开(公告)号：US08266080B2

    公开(公告)日：2012-09-11

    申请号：US12354356

    申请日：2009-01-15

    申请人： Won-Hyouk Jang ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

    发明人： Won-Hyouk Jang ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

    IPC分类号： G06F15/18

    CPC分类号： G01B11/0641 ,  G01B11/0683 ,  H01L22/12 ,  H01L22/20

    摘要： A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

    摘要翻译： 公开了一种用于测量沉积在衬底上的非晶硅的沉积厚度的虚拟测量装置和方法，其中测量非晶硅的沉积厚度的方法包括预测和适应操作。 在预测操作中，在将非晶硅沉积到衬底的过程中，通过使用表示沉积速度和多个工艺因素之间的关系的预测模型将预测的沉积速度乘以沉积时间来预测沉积厚度 与从沉积厚度和沉积时间获得的沉积速度相关联，并将预测的沉积厚度与测量的沉积厚度进行比较，使得多个工艺因素之间的关系和预测模型中的沉积速度被补偿 根据比较差异。