摘要:
An SRAM, which includes a plurality of bit line pairs, a memory cell connected between each pair of the bit lines, and an address transition detection circuit for detecting transition of the externally applied address signal to generate a detection pulse signal, is provided with an improved bit line precharge circuit requiring only two transistors per bit line pair. The new precharge circuit is controlled by a bit line precharge control signal generator for generating a control signal determined by a ratio of impedances connected between a source voltage and ground voltage.
摘要:
A true bit line can extend across a memory cell area of the memory device in a first direction and a complementary bit line can extend across the memory cell area in a second direction opposing the first direction, wherein the true bit line and the complementary bit line comprising a bit line pair.
摘要:
A data output circuit includes a periphery circuit connected between a supply voltage and a first ground voltage line and an output driver connected between a supply voltage and a second ground voltage line. The periphery circuit receives a first input signal and generates a first output signal on a node responsive to the first input signal, and the output driver receives a second input signal and the first output signal and generates a second output signal on an output pin in response thereto. A discharge circuit is coupled with the first ground voltage line wherein the discharge circuit allows current to flow from the first ground voltage line and wherein the discharge circuit blocks current flow to the first ground voltage line. Related methods are also discussed.
摘要:
A true bit line can extend across a memory cell area of the memory device in a first direction and a complementary bit line can extend across the memory cell area in a second direction opposing the first direction, wherein the true bit line and the complementary bit line comprising a bit line pair.
摘要:
A data output circuit includes a periphery circuit connected between a supply voltage and a first ground voltage line and an output driver connected between a supply voltage and a second ground voltage line. The periphery circuit receives a first input signal and generates a first output signal on a node responsive to the first input signal, and the output driver receives a second input signal and the first output signal and generates a second output signal on an output pin in response thereto. A discharge circuit is coupled with the first ground voltage line wherein the discharge circuit allows current to flow from the first ground voltage line and wherein the discharge circuit blocks current flow to the first ground voltage line. Related methods are also discussed.
摘要:
Integrated circuit memory devices include a first column of memory cells electrically coupled to a first pair of bit lines and a bit line precharge and selection circuit. This bit line precharge and selection circuit includes at least one stacked arrangement of thin-film transistors. These thin-film transistors include a first PMOS thin-film pull-up transistor and a first NMOS thin-film pass transistor. These thin-film transistors are electrically coupled to one of the first pair of bit lines. The first column of memory cells includes a column of TFT SRAM cells.
摘要:
Integrated circuit memory devices include a first column of memory cells electrically coupled to a first pair of bit lines and a bit line precharge and selection circuit. This bit line precharge and selection circuit includes at least one stacked arrangement of thin-film transistors. These thin-film transistors include a first PMOS thin-film pull-up transistor and a first NMOS thin-film pass transistor. These thin-film transistors are electrically coupled to one of the first pair of bit lines. The first column of memory cells includes a column of TFT SRAM cells.
摘要:
Integrated circuit memory devices include overlapping bit lines and power supply lines. The integrated circuit memory devices include a memory cell array in an integrated circuit substrate and a plurality of spaced apart bit lines on the memory cell array, extending in a first direction. A plurality of spaced apart power lines are also included on the memory cell array, extending in the first direction, and on at least one of the plurality of bit lines. The overlapping bit lines and power supply lines are insulated from one another, for example by providing these lines in first and second patterned conductive layers. Accordingly, higher density integrated circuit devices may be provided while allowing high speed operation and effective power supply voltage distribution.
摘要:
The present invention relates to a network-based robot system and an executing method thereof. According to an exemplary embodiment of the present invention, predefine environment information is expressed in a universal data model (UDM) described by a linkage that shows a relationship among nodes, each node being an object of a virtual space abstracted by a real physical space. The universal data model is updated based on the context information, event occurrence information is transmitted to a task engine when the context information data value is changed, and the task engine executes a corresponding task through reasoning and invokes an external service. The robot can better recognize the context information by utilizing the external sensing function and external processing function. In addition, the robot system can provide an active service by reasoning the recognized context information and obtaining high-level information.
摘要:
Memory devices are provided which are capable of performing burst operations by simultaneously writing/reading a plurality of data bits to/from memory in response to a selection of a single wordline, and which are capable of controlling data input/output for interruption of burst operation interruptions without having to employ complex control circuitry.