-
公开(公告)号：US20110102099A1
公开(公告)日：2011-05-05
申请号：US12834130
申请日：2010-07-12
申请人： Jea Shik SHIN , Dal Ahn , Duck Hwan Kim , In Sang Song , Chul Soo Kim , Yun Kwon Park , Hyung Rak Kim
发明人： Jea Shik SHIN , Dal Ahn , Duck Hwan Kim , In Sang Song , Chul Soo Kim , Yun Kwon Park , Hyung Rak Kim
IPC分类号： H01P5/12
摘要： A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.
摘要翻译： 提供了使用体声波谐振器（BAWR）的移相器。 使用BAWR的移相器可以使用相对于BAWR的频率的相移特性，并且还使用至少一个电容器，至少一个电感器等。
-
2.发明授权Balun comprising two conversion circuits each constituted by first to third FBARs 有权平衡/不平衡变换器包括由第一至第三FBAR构成的两个转换电路公开(公告)号：US08854157B2
公开(公告)日：2014-10-07
申请号：US12834099
申请日：2010-07-12
申请人： Duck Hwan Kim , Dal Ahn , Chul Soo Kim , In Sang Song , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim
发明人： Duck Hwan Kim , Dal Ahn , Chul Soo Kim , In Sang Song , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim
IPC分类号： H03H9/00
CPC分类号： H03H9/0095
摘要： Disclosed is a balun including a film bulk acoustic resonator (FBAR). The balun may be implemented using the FBAR to fabricate a small sized balun. Also, the balun may be implemented using the FBAR, thereby reducing a difference in two outputs.
摘要翻译： 公开了一种包括膜体声波谐振器（FBAR）的平衡 - 不平衡转换器。 平衡不平衡变压器可以使用FBAR来实现，以制造小尺寸的平衡 - 不平衡转换器。 此外，平衡 - 不平衡变换器可以使用FBAR实现，从而减少两个输出的差异。
-
公开(公告)号：US20110095849A1
公开(公告)日：2011-04-28
申请号：US12834099
申请日：2010-07-12
申请人： Duck Hwan KIM , Dal Ahn , Chul Soo Kim , In Sang Song , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim
发明人： Duck Hwan KIM , Dal Ahn , Chul Soo Kim , In Sang Song , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim
IPC分类号： H03H9/54
CPC分类号： H03H9/0095
摘要： Disclosed is a balun including a film bulk acoustic resonator (FBAR). The balun may be implemented using the FBAR to fabricate a small sized balun. Also, the balun may be implemented using the FBAR, thereby reducing a difference in two outputs.
摘要翻译： 公开了一种包括膜体声波谐振器（FBAR）的平衡 - 不平衡转换器。 平衡不平衡变压器可以使用FBAR来实现，以制造小尺寸的平衡 - 不平衡转换器。 此外，平衡 - 不平衡变换器可以使用FBAR实现，从而减少两个输出的差异。
-
公开(公告)号：US08416037B2
公开(公告)日：2013-04-09
申请号：US12834130
申请日：2010-07-12
申请人： Jea Shik Shin , Dal Ahn , Duck Hwan Kim , In Sang Song , Chul Soo Kim , Yun Kwon Park , Hyung Rak Kim
发明人： Jea Shik Shin , Dal Ahn , Duck Hwan Kim , In Sang Song , Chul Soo Kim , Yun Kwon Park , Hyung Rak Kim
摘要： A phase shifter using a Bulk Acoustic Wave Resonators (BAWR) is provided. The phase shifter using a BAWR may use a property of a phase shift with respect to a frequency of the BAWR, and also use at least one capacitor, at least one inductor, and the like.
-
5.发明申请RF LAYERED MODULE USING THREE DIMENSIONAL VERTICAL WIRING AND DISPOSING METHOD THEREOF 有权使用三维垂直接线的射频分层模块及其处理方法公开(公告)号：US20120063106A1
公开(公告)日：2012-03-15
申请号：US13217371
申请日：2011-08-25
申请人： Young Il KIM , In Sang Song , Duck Hwan Kim , Chul Soo Kim , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
发明人： Young Il KIM , In Sang Song , Duck Hwan Kim , Chul Soo Kim , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
CPC分类号： H01L23/66 , H01L23/13 , H01L23/5385 , H01L25/0652 , H01L25/0657 , H01L25/16 , H01L2223/6616 , H01L2224/16225 , H01L2224/48227 , H01L2225/0652 , H01L2225/06548 , H01L2225/06572 , H01L2924/01322 , H01L2924/15311 , H01L2924/3011 , Y10T29/49165 , H01L2924/00
摘要： Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via- hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.
摘要翻译： 提供了一种使用三维（3D）垂直布线的射频（RF）分层模块的结构和布置方法。 具有3D垂直布线的RF分层模块中的第一晶片可以包括第一RF器件和至少一个第一通孔。 第二晶片可以包括第二RF器件和设置在对应于至少一个第一通孔的位置处的至少一个第二通孔。 垂直布线可以连接至少一个第一通孔和至少一个第二通孔。 垂直布线可以被配置为通过至少一个第一通孔的底表面或至少一个第二通孔的顶表面连接到外部装置。
-
6.发明授权RF layered module using three dimensional vertical wiring and disposing method thereof 有权RF分层模块采用三维垂直布线及其布置方法公开(公告)号：US08824163B2
公开(公告)日：2014-09-02
申请号：US13217371
申请日：2011-08-25
申请人： Young Il Kim , In Sang Song , Duck Hwan Kim , Chul Soo Kim , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
发明人： Young Il Kim , In Sang Song , Duck Hwan Kim , Chul Soo Kim , Yun Kwon Park , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
IPC分类号： H05K1/18 , H01L25/065 , H01L25/16 , H01L23/66 , H01L23/13 , H01L23/538
CPC分类号： H01L23/66 , H01L23/13 , H01L23/5385 , H01L25/0652 , H01L25/0657 , H01L25/16 , H01L2223/6616 , H01L2224/16225 , H01L2224/48227 , H01L2225/0652 , H01L2225/06548 , H01L2225/06572 , H01L2924/01322 , H01L2924/15311 , H01L2924/3011 , Y10T29/49165 , H01L2924/00
摘要： Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via-hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.
摘要翻译： 提供了一种使用三维（3D）垂直布线的射频（RF）分层模块的结构和布置方法。 具有3D垂直布线的RF分层模块中的第一晶片可以包括第一RF器件和至少一个第一通孔。 第二晶片可以包括第二RF器件和设置在对应于至少一个第一通孔的位置处的至少一个第二通孔。 垂直布线可以连接至少一个第一通孔和至少一个第二通孔。 垂直布线可以被配置为通过至少一个第一通孔的底表面或至少一个第二通孔的顶表面连接到外部装置。
-
7.发明授权公开(公告)号：US09735754B2
公开(公告)日：2017-08-15
申请号：US13558907
申请日：2012-07-26
申请人： Jea Shik Shin , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , Hyung Rak Kim , Jae Chun Lee
发明人： Jea Shik Shin , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , Hyung Rak Kim , Jae Chun Lee
摘要： A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
-
8.发明申请BULK ACOUSTIC WAVE RESONATOR STRUCTURE, A MANUFACTURING METHOD THEREOF, AND A DUPLEXER USING THE SAME 有权大容量声波谐振器结构及其制造方法，以及使用其的双工器公开(公告)号：US20120049976A1
公开(公告)日：2012-03-01
申请号：US13088905
申请日：2011-04-18
申请人： Sang Uk Son , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
发明人： Sang Uk Son , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
IPC分类号： H03H9/70 , H03H3/02 , H01L41/047
CPC分类号： H03H9/02149 , H03H3/04 , H03H9/1014 , H03H9/131 , H03H9/564 , H03H9/706 , H03H2003/021
摘要： A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
摘要翻译： 提供了一种体声波谐振器（BAWR），一种制造BAWR的方法，以及包括BAWR的双工器。 BAWR可以包括第一基板，其包括形成在第一基板的底表面的预定区域中的通孔。 可以在第一基板上形成第一空气腔，并且第一层叠谐振部分可以按照下电极，压电层和上电极的顺序层叠在第一空气腔的上方。 可以在第一基板的上方形成第二空气腔，并且第二层压谐振部分可以按照下电极，压电层和上电极的顺序层叠在第二空气腔的上方。 第一层叠谐振部分和第二层叠谐振部分可以通过下电极或上电极连接。 第一电极部分可以包括形成在第一层压谐振部分和第二层压谐振部分之间的下电极或上电极的底表面上的第三空腔。
-
9.发明申请BULK ACOUSTIC WAVE RESONATOR AND DUPLEXER USING BULK ACOUSTIC WAVE RESONATOR 有权使用大容量声波谐振器的大容量声波谐波器和双工器公开(公告)号：US20130027153A1
公开(公告)日：2013-01-31
申请号：US13558907
申请日：2012-07-26
申请人： Jea Shik Shin , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , Hyung Rak Kim , Jae Chun Lee
发明人： Jea Shik Shin , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , Hyung Rak Kim , Jae Chun Lee
IPC分类号： H01L41/083 , H03H9/54 , H03H9/70
摘要： A bulk acoustic wave resonator (BAWR) includes a bulk acoustic resonance unit and at least one compensation layer. The bulk acoustic resonance unit includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode. The first electrode, the second electrode, and the piezoelectric layer each include a material that modifies a resonance frequency based on a temperature, and the at least one compensation layer includes a material that adjusts the resonance frequency modified based on the temperature in a direction opposite to a direction of the modification.
摘要翻译： 体声波谐振器（BAWR）包括体声共振单元和至少一个补偿层。 体声共振单元包括第一电极，第二电极和设置在第一电极和第二电极之间的压电层。 第一电极，第二电极和压电层各自包括基于温度改变谐振频率的材料，并且至少一个补偿层包括调节基于相反方向上的温度改变的谐振频率的材料 到修改的方向。
-
10.发明授权Bulk acoustic wave resonator structure, a manufacturing method thereof, and a duplexer using the same 有权体声波谐振器结构，其制造方法以及使用其的双工器公开(公告)号：US08648671B2
公开(公告)日：2014-02-11
申请号：US13088905
申请日：2011-04-18
申请人： Sang Uk Son , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
发明人： Sang Uk Son , In Sang Song , Young Il Kim , Duck Hwan Kim , Chul Soo Kim , Jea Shik Shin , Hyung Rak Kim , Jae Chun Lee
CPC分类号： H03H9/02149 , H03H3/04 , H03H9/1014 , H03H9/131 , H03H9/564 , H03H9/706 , H03H2003/021
摘要： A Bulk Acoustic Wave Resonator (BAWR), a method of manufacturing of the BAWR, and duplexer including the BAWR are provided. The BAWR may include a first substrate including a via hole formed in a predetermined area of a bottom surface of the first substrate. A first air cavity may be formed above the first substrate, and a first lamination resonating portion may be laminated above the first air cavity in sequence of a lower electrode, a piezoelectric layer, and an upper electrode. A second air cavity may be formed above the first substrate, and a second lamination resonating portion may be laminated above the second air cavity in sequence of the lower electrode, the piezoelectric layer, and the upper electrode. The first lamination resonating portion and the second lamination resonating portion may be connected via either the lower electrode or the upper electrode. A first electrode portion may include a third air cavity formed on a bottom surface of either the lower electrode or the upper electrode connecting between the first lamination resonating portion and the second lamination resonating portion.
摘要翻译： 提供了一种体声波谐振器（BAWR），一种制造BAWR的方法，以及包括BAWR的双工器。 BAWR可以包括第一基板，其包括形成在第一基板的底表面的预定区域中的通孔。 可以在第一基板上形成第一空气腔，并且第一层叠谐振部分可以按照下电极，压电层和上电极的顺序层叠在第一空气腔的上方。 可以在第一基板的上方形成第二空气腔，并且第二层压谐振部分可以按照下电极，压电层和上电极的顺序层叠在第二空气腔的上方。 第一层叠谐振部分和第二层叠谐振部分可以通过下电极或上电极连接。 第一电极部分可以包括形成在第一层压谐振部分和第二层压谐振部分之间的下电极或上电极的底表面上的第三空腔。
-
-
-
-
-
-
-
-
-
搜索结果
17 条记录 (耗时 0.032 秒)
