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    Method of adhesion between an oxide layer and a metal layer
    1.
    发明授权
    Method of adhesion between an oxide layer and a metal layer 有权
    氧化物层和金属层之间的粘附方法

    公开(公告)号：US06790476B1

    公开(公告)日：2004-09-14

    申请号：US10154224

    申请日：2002-05-21

    申请人： Dwight R. Jennison ,  Alexander Bogicevic ,  Jeffry A. Kelber ,  Scott A. Chambers

    发明人： Dwight R. Jennison ,  Alexander Bogicevic ,  Jeffry A. Kelber ,  Scott A. Chambers

    IPC分类号： C23C1606

    CPC分类号： C23C14/185 ,  C23C14/024

    摘要： A method of controlling the wetting characteristics and increasing the adhesion between a metal and an oxide layer. By introducing a negatively-charged species to the surface of an oxide layer, layer-by-layer growth of metal deposited onto the oxide surface is promoted, increasing the adhesion strength of the metal-oxide interface. The negatively-charged species can either be deposited onto the oxide surface or a compound can be deposited that dissociates on, or reacts with, the surface to form the negatively-charged species. The deposited metal adatoms can thereby bond laterally to the negatively-charged species as well as vertically to the oxide surface as well as react with the negatively charged species, be oxidized, and incorporated on or into the surface of the oxide.

    摘要翻译： 控制润湿特性并增加金属和氧化物层之间的粘附性的方法。 通过向氧化物层的表面引入带负电荷的物质，促进沉积在氧化物表面上的金属逐层生长，增加金属氧化物界面的粘合强度。 带负电荷的物质可以沉积在氧化物表面上，或者可以沉积化合物，其与表面分离或与表面反应以形成带负电荷的物质。 沉积的金属吸附原子因此可以侧向地连接到带负电的物质以及垂直于氧化物表面，并且与带负电的物质反应，被氧化并且结合到氧化物的表面上或其中。

    Conductor structures including penetrable materials
    3.
    发明授权
    Conductor structures including penetrable materials 失效
    导体结构包括可穿透材料

    公开(公告)号：US07534967B2

    公开(公告)日：2009-05-19

    申请号：US10785615

    申请日：2004-02-24

    申请人： Jeffry A. Kelber ,  Jipu Lei ,  Noel P. Magtoto ,  Sergei Rudenja

    发明人： Jeffry A. Kelber ,  Jipu Lei ,  Noel P. Magtoto ,  Sergei Rudenja

    IPC分类号： H01R12/04 ,  H05K1/11

    CPC分类号： H01L21/28562

    摘要： Conductor structures include a substrate, a first conducting layer that is selectively passivated from growth of unwanted surface layers by the application of a selective passivation layer, and a second conducting layer that is applied onto the selective passivation layer. The selective passivation layer prevents the combination of unwanted materials with the first conducting layer while allowing the combination of the applied second conducting layer with the first conducting layer. The selective passivation layer is displaced by the second conducting layer and remains as a passivation layer on the exposed surface of the second conducting layer being displaced, thereby protecting the first and second conducting layers from unwanted materials or unwanted surface layers. Methods of fabricating conductor structures are also provided.

    摘要翻译： 导体结构包括衬底，通过施加选择性钝化层选择性地钝化来自不想要的表面层的生长的第一导电层和施加到选择性钝化层上的第二导电层。 选择性钝化层防止不想要的材料与第一导电层的组合，同时允许施加的第二导电层与第一导电层的组合。 选择性钝化层被第二导电层移位，并保持为位于第二导电层的暴露表面上的钝化层，从而保护第一和第二导电层免受不需要的材料或不需要的表面层。 还提供了制造导体结构的方法。

    Film for use in microelectronic devices and methods of producing same
    4.
    发明授权
    Film for use in microelectronic devices and methods of producing same 有权
    用于微电子器件的薄膜及其制造方法

    公开(公告)号：US06306495B1

    公开(公告)日：2001-10-23

    申请号：US09627220

    申请日：2000-07-27

    申请人： Jeffry A. Kelber

    发明人： Jeffry A. Kelber

    IPC分类号： B32B712

    CPC分类号： H01L23/5329 ,  H01L2924/0002 ,  Y10T428/265 ,  Y10T428/31663 ,  H01L2924/00

    摘要： The present invention provides thin films for use in microelectronic devices. In one aspect, the present invention provides a copper diffusion barrier. In another aspect, the present invention provides a polymer film for various applications including use as a dielectric insulator and surface modification layers. Methods for the production of the films are also disclosed.

    摘要翻译： 本发明提供了用于微电子器件的薄膜。 一方面，本发明提供铜扩散阻挡层。 另一方面，本发明提供了用于各种应用的聚合物膜，包括用作电介质绝缘体和表面改性层。 还公开了制备膜的方法。

    Films for use in microelectronic devices and methods of producing same
    5.
    发明授权
    Films for use in microelectronic devices and methods of producing same 失效
    用于微电子器件的薄膜及其制造方法

    公开(公告)号：US6114032A

    公开(公告)日：2000-09-05

    申请号：US58474

    申请日：1998-04-10

    申请人： Jeffry A. Kelber

    发明人： Jeffry A. Kelber

    IPC分类号： H01L23/532 ,  B32B7/12

    CPC分类号： H01L23/5329 ,  H01L2924/0002 ,  Y10T428/265

    摘要： The present invention provides thin films for use in microelectronic devices. In one aspect, the present invention provides a copper diffusion barrier. In another aspect, the present invention provides a polymer film for various applications including use as a dielectric insulator and surface modification layers. Methods for the production of the films are also disclosed.

    摘要翻译： 本发明提供了用于微电子器件的薄膜。 一方面，本发明提供铜扩散阻挡层。 另一方面，本发明提供了用于各种应用的聚合物膜，包括用作电介质绝缘体和表面改性层。 还公开了制备膜的方法。

    Graphene formation on dielectrics and electronic devices formed therefrom
    6.
    发明授权
    Graphene formation on dielectrics and electronic devices formed therefrom 失效
    在由其形成的电介质和电子器件上形成石墨烯

    公开(公告)号：US08685802B2

    公开(公告)日：2014-04-01

    申请号：US12980763

    申请日：2010-12-29

    申请人： Jeffry A. Kelber ,  Sneha Sen Gaddam ,  Cameron L. Bjelkevig

    发明人： Jeffry A. Kelber ,  Sneha Sen Gaddam ,  Cameron L. Bjelkevig

    IPC分类号： H01L29/66 ,  H01L21/04

    CPC分类号： H01L21/02527 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/1606 ,  H01L29/66431 ,  H01L29/7781

    摘要： Methods of forming a graphene-based device are provided. According to an embodiment, a graphene-based device can be formed by subjecting a substrate having a dielectric formed thereon to a chemical vapor deposition (CVD) process using a cracked hydrocarbon or a physical vapor deposition (PVD) process using a graphite source; and performing an annealing process. The annealing process can be performed to temperatures of 1000 K or more. The cracked hydrocarbon of the CVD process can be cracked ethylene. In accordance with one embodiment, the application of the cracked ethylene to a MgO(111) surface followed by an annealing under ultra high vacuum conditions can result in a structure on the MgO(111) surface of an ordered graphene film with an oxidized carbon-containing interfacial layer therebetween. In another embodiment, the PVD process can be used to form single or multiple monolayers of graphene.

    摘要翻译： 提供了形成基于石墨烯的器件的方法。 根据实施例，可以通过使用石墨源使用裂化烃或物理气相沉积（PVD）工艺对其上形成有电介质的基板进行化学气相沉积（CVD）工艺来形成基于石墨烯的器件; 并进行退火处理。 退火处理可以进行到1000K以上的温度。 CVD工艺的裂解烃可以裂化乙烯。 根据一个实施方案，将裂化的乙烯施加到MgO（111）表面，然后在超高真空条件下进行退火可导致具有氧化碳 - 碳的有序石墨烯膜的MgO（111）表面上的结构， 其间含有界面层。 在另一个实施方案中，PVD方法可用于形成单层或多层石墨烯单层。