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公开(公告)号:US12234570B2
公开(公告)日:2025-02-25
申请号:US17593201
申请日:2020-03-30
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
IPC: C30B25/20 , C23C16/00 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/18 , C30B29/04 , C30B29/68 , C30B33/00
Abstract: A method of forming a diamond composite body and the diamond composite body. A first single crystal diamond body is provided, which contains nitrogen and has a uniform strain such that over an area of at least 1×1 mm, at least 90 percent of points display a modulus of strain-induced shift of NV resonance of less than 200 kHz, wherein each point in the area is a resolved region of 50 μm2. The first single crystal diamond body is treated to convert at least some of the nitrogen to form at least 0.3 ppm nitrogen-vacancy, NV−, centres. A CVD process is used to grow a second single crystal diamond body on a surface of the first single crystal diamond body. The second single crystal diamond body has an NV concentration less than or equal to 10 times lower than the NV− concentration in the first single crystal diamond body.
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公开(公告)号:US11807955B2
公开(公告)日:2023-11-07
申请号:US16962860
申请日:2019-01-24
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: Matthew Lee Markham , Andrew Mark Edmonds
IPC: C30B25/20 , C30B25/00 , B01L3/00 , C30B25/04 , C30B29/04 , G01N24/10 , G01R33/30 , G01R33/60 , B82Y10/00
CPC classification number: C30B25/00 , B01L3/502707 , C30B25/04 , C30B29/04 , G01N24/10 , G01R33/302 , G01R33/60 , B01L2300/0627 , B82Y10/00
Abstract: A synthetic diamond material comprises a surface, wherein the surface comprises a first surface region comprising a first concentration of quantum spin defects. A second surface region has a predetermined area and is located adjacent to the first surface region, the second region comprising a second concentration of quantum spin defects. The first concentration of quantum spin defects is at least ten times greater than the second concentration of quantum spin defects, and at least one of the first or second surface regions comprises chemical vapour deposition, CVD, synthetic diamond. A method of producing the synthetic diamond material is also disclosed.
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公开(公告)号:US20240094004A1
公开(公告)日:2024-03-21
申请号:US17766883
申请日:2020-12-15
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: Andrew Mark Edmonds , Matthew Lee Markham
CPC classification number: G01C21/206 , G01S5/16
Abstract: A system and sensor device for determining geolocation data. A plurality of nodes, each at a predetermined location is provided. Each node emits a time-varying magnetic field, each time-varying magnetic field having a characteristic identifying the node. A sensor device comprises a magnetometer, the magnetometer configured to detect the time-varying magnetic field from at least one of the plurality of nodes, the magnetometer comprising diamond comprising at least one quantum spin defect. The sensor device has a processor configured to determine the identifying characteristic from the sensed time-varying magnetic field, and is further configured to determine geolocation data on the basis of at least the determined identifying characteristic.
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公开(公告)号:US12037702B2
公开(公告)日:2024-07-16
申请号:US18488602
申请日:2023-10-17
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
IPC: C30B25/20 , C23C16/00 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/18 , C30B29/04 , C30B29/68 , C30B33/00
CPC classification number: C30B25/20 , C23C16/006 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/186 , C30B25/205 , C30B29/04 , C30B29/68 , C30B33/00
Abstract: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.
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公开(公告)号:US20240060210A1
公开(公告)日:2024-02-22
申请号:US18488602
申请日:2023-10-17
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
IPC: C30B25/20 , C23C16/00 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/18 , C30B29/04 , C30B29/68 , C30B33/00
CPC classification number: C30B25/20 , C23C16/006 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/186 , C30B25/205 , C30B29/04 , C30B29/68 , C30B33/00
Abstract: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen, Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen. A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.
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公开(公告)号:US11821107B2
公开(公告)日:2023-11-21
申请号:US17593200
申请日:2020-03-30
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
IPC: C30B25/20 , C30B25/16 , C30B29/04 , C23C16/00 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/18 , C30B29/68 , C30B33/00
CPC classification number: C30B25/20 , C23C16/006 , C23C16/02 , C23C16/27 , C23C16/56 , C30B25/16 , C30B25/186 , C30B25/205 , C30B29/04 , C30B29/68 , C30B33/00
Abstract: Single crystal CVD diamond material comprising a total nitrogen concentration of at least 5 ppm and a neutral single substitutional nitrogen. Ns0, to total single substitutional nitrogen, Ns, ratio of at least 0.7. Such a diamond is observed to have a relatively low amount of brown colouration despite the relatively high concentration of nitrogen A method of making the single crystal diamond is also disclosed, the method including growing the CVD diamond in process gases comprising 60 to 200 ppm nitrogen, in addition to a carbon-containing gas, and hydrogen, wherein the ratio of carbon atoms in the carbon-containing gas to hydrogen atoms in the hydrogen gas is 0.5 to 1.5%.
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