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1.发明授权
公开(公告)号：US5830332A
公开(公告)日：1998-11-03
申请号：US781080
申请日：1997-01-09
CPC分类号： G03F1/32 , C23C14/0605 , G03F1/26 , G03F1/34
摘要： The present invention relates to a method of reactive sputtering for depositing an amorphous hydrogenated carbon film (a-C:H) from an argon/hydrocarbon/hydrogen/oxygen plasma, preferably an Ar/acetylene-helium/hydrogen/oxygen plasma. Such films are optically transparent in the visible range and partially absorbing at ultraviolet (UV) and deep UV (DUV) wavelengths, in particular, 365, and 248, 193 nm. Moreover, the films produced by the present invention are amorphous, hard, scratch resistant, and etchable by excimer laser ablation or by oxygen reactive ion etch process. Because of these unique properties, these films can be used to form a patterned absorber for UV and DUV single layer attenuated phase shift masks. Film absorption can also be increased such that these films can be used to fabricate conventional photolithographic shadow masks.
摘要翻译： 本发明涉及一种用于从氩/烃/氢/氧等离子体，优选Ar /乙炔 - 氦/氢/氧等离子体沉积无定形氢化碳膜（a-C：H）的反应溅射方法。 这种膜在可见光范围内是光学透明的，并且在紫外（UV）和深紫外（DUV）波长，特别是365和248,193nm处部分吸收。 此外，本发明生产的薄膜是非晶的，硬的，耐划伤的，并且可以通过准分子激光烧蚀或通过氧反应离子蚀刻工艺进行蚀刻。 由于这些独特的性质，这些膜可用于形成用于UV和DUV单层衰减相移掩模的图案化吸收体。 也可以增加膜吸收，使得这些膜可用于制造常规光刻阴影掩模。
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公开(公告)号：US06251569B1
公开(公告)日：2001-06-26
申请号：US09373555
申请日：1999-08-13
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03F730
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
摘要翻译： 已经发现了一组新的基于聚合物侧基碳基 - 氧键重新分配的非化学扩增负色调水/水基（可显影（photo））抗蚀剂。
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公开(公告)号：US5286599A
公开(公告)日：1994-02-15
申请号：US766596
申请日：1991-09-26
申请人： Edward D. Babich , Eileen A. Galligan , Jeffrey D. Gelorme , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Russell J. Serino , David F. Witman
发明人： Edward D. Babich , Eileen A. Galligan , Jeffrey D. Gelorme , Richard P. McGouey , Sharon L. Nunes , Jurij R. Paraszczak , Russell J. Serino , David F. Witman
IPC分类号： G03F7/004 , G03F7/029 , G03F7/038 , G03F7/075 , H01L21/027 , H01L21/30 , G03C1/72 , G03C1/73
CPC分类号： G03F7/038 , Y10S430/107 , Y10S430/11 , Y10S430/115
摘要： A composition containing novolak polymer, and/or poly(p-vinylphenol), an organometallic material, an amino polymer a cationic photocatalyst. The composition can also include a cosensitizer material which makes a composition sensitive to near U.V. radiation.
摘要翻译： 含有酚醛清漆聚合物和/或聚（对乙烯基苯酚），有机金属材料，氨基聚合物阳离子光催化剂的组合物。 组合物还可以包括使组合物对近紫外线敏感的敏感剂材料。 辐射。
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4.发明授权
公开(公告)号：US4693960A
公开(公告)日：1987-09-15
申请号：US928680
申请日：1986-11-07
CPC分类号： G03F7/0757 , C08K5/07 , Y10S430/119
摘要： A composition containing a polysiloxane having a polymerizable ethylenically unsaturated group, and 2,2-dimethoxy-2-phenyl acetophenone as an ultraviolet light sensitizer; and use thereof in lithography.
摘要翻译： 含有聚合性烯属不饱和基团的聚硅氧烷和2,2-二甲氧基-2-苯基苯乙酮作为紫外线敏化剂的组合物; 并在光刻中使用。
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公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译： 通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。 抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。
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公开(公告)号：US6132644A
公开(公告)日：2000-10-17
申请号：US086238
申请日：1998-05-28
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B1/12 , H01L23/532 , H01B1/20
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译： 本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。 该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。 该组合物也可用于扫描电子测量和静电消散的应用中。
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公开(公告)号：US5593812A
公开(公告)日：1997-01-14
申请号：US389864
申请日：1995-02-17
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/116 , Y10S430/12 , Y10S430/121 , Y10S430/123 , Y10S430/124 , Y10S430/125
摘要： The sensitivity of a photoresist to actinic light is improved by the addition of certain dyes. The photoresist includes a polymer matrix, a photosensitive acid generator and at least one compound selected from the group consisting of dyes containing at least one heterosulphur atom such as 2,2.sup.1,5.sup.1,2"-terthiophene and its derivatives; thianthrene and its derivatives, and 4,6-diphenylthieno(3,4-d)-1,3-dioxol-2-one-5,5-dioxide; phenylsulfone and its derivatives; and 4,5-diphenyl-1,3-dioxol-2-one; 3,4-bis(acetoxymethyl)furan; chelidonic acid and its derivatives; and 5,7,12,14-pentacenetetrone. Resist images on a substrate are formed from the compositions.
摘要翻译： 通过添加某些染料可以改善光致抗蚀剂对光化光的敏感性。 光致抗蚀剂包括聚合物基质，光敏酸产生剂和至少一种选自包含至少一个杂硫原子的染料的化合物，例如2,2,1,51,2“ - 三噻吩及其衍生物; 噻吩及其衍生物和4,6-二苯基噻吩并（3,4-d）-1,3-二氧杂环戊烯-2-酮-5,5-二氧化物; 苯砜及其衍生物; 和4,5-二苯基-1,3-二氧杂环戊烯-2-酮; 3,4-二（乙酰氧基甲基）呋喃; 螯合酸及其衍生物; 和5,7,12,14-五硝基四酮。 由组合物形成基底上的抗蚀剂图像。
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公开(公告)号：US5110711A
公开(公告)日：1992-05-05
申请号：US683729
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
CPC分类号： G03F7/029 , G03F7/027 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译： 一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或
其中 每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。 该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。 还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。 -
公开(公告)号：US5098816A
公开(公告)日：1992-03-24
申请号：US683778
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
CPC分类号： G03F7/027 , G03F7/029 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译： 一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或
其中 每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。 该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。 还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。 -
10.发明授权Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions 失效超紫外线敏感光敏组合物，其使用和辐射敏感组合物
公开(公告)号：US5059512A
公开(公告)日：1991-10-22
申请号：US419047
申请日：1989-10-10
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
IPC分类号： G03F7/031 , C08F2/50 , C08G59/68 , C08G77/14 , C08G77/22 , C08G85/00 , C08L83/04 , C08L83/06 , G03F7/027 , G03F7/029 , G03F7/075
CPC分类号： G03F7/0755 , G03F7/027 , G03F7/029 , G03F7/0757 , Y10S430/127 , Y10S502/522
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
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