公开(公告)号：US20100183112A1

公开(公告)日：2010-07-22

申请号：US12646519

申请日：2009-12-23

申请人： Eiji ASHIDA ,  Xudong Zhang ,  Shoh Tarasawa ,  Masaya Okada ,  Yusuke Anma

发明人： Eiji ASHIDA ,  Xudong Zhang ,  Shoh Tarasawa ,  Masaya Okada ,  Yusuke Anma

IPC分类号： G21C11/08 ,  B23K35/38 ,  B23K26/28

CPC分类号： B23K33/006 ,  B23K26/28 ,  B23K35/22 ,  B23K35/38 ,  G21C11/083 ,  G21C21/00 ,  Y02E30/40

摘要： The present invention provides a method of manufacturing a core shroud for a nuclear plant and a nuclear power plant structure in which a groove portion is easily assembled in the case of manufacturing the core shroud having a weld structure of a nuclear power plant by a laser welding, and it is possible to obtain a weld joint portion in which a plastic distortion region and a residual stress are as small as possible, going with a solidification shrinkage of the weld portion. At a time of welding butted portions of a plurality of members constructing a core shroud, a root face is provided in the butted portion, a length of the root face is set to 25% to 95% of a thickness of the thinner one of the butted portions of a plurality of members, a narrow groove is provided in the other than the root face, and the butted portions are welded by a laser welding using a weld wire.

摘要翻译： 本发明提供一种制造用于核电厂的核心护罩的方法和核电站结构，其中在通过激光焊接制造具有核电厂的焊接结构的芯护罩的情况下容易组装槽部 ，并且可以获得其中塑性变形区域和残余应力尽可能小的焊接接头部分，随着焊接部分的凝固收缩。 在构成芯护罩的多个构件的对接部分的焊接时，在对接部设置有根面，根面的长度设定为较薄的一个的厚度的25％〜95％ 多个构件的对接部分，在根面上设置有窄槽，并且通过使用焊丝的激光焊接焊接对接部。

公开(公告)号：US08681923B2

公开(公告)日：2014-03-25

申请号：US12646519

申请日：2009-12-23

申请人： Eiji Ashida ,  Xudong Zhang ,  Shoh Tarasawa ,  Masaya Okada ,  Yusuke Anma

发明人： Eiji Ashida ,  Xudong Zhang ,  Shoh Tarasawa ,  Masaya Okada ,  Yusuke Anma

IPC分类号： B23K26/20 ,  B23K26/12 ,  G21C21/00 ,  G21C5/02 ,  G21C11/00 ,  B23K26/00 ,  G21C5/00

CPC分类号： B23K33/006 ,  B23K26/28 ,  B23K35/22 ,  B23K35/38 ,  G21C11/083 ,  G21C21/00 ,  Y02E30/40

摘要： The present invention provides a method of manufacturing a core shroud for a nuclear plant and a nuclear power plant structure in which a groove portion is easily assembled in the case of manufacturing the core shroud having a weld structure of a nuclear power plant by a laser welding, and it is possible to obtain a weld joint portion in which a plastic distortion region and a residual stress are as small as possible, going with a solidification shrinkage of the weld portion. At a time of welding butted portions of a plurality of members constructing a core shroud, a root face is provided in the butted portion, a length of the root face is set to 25% to 95% of a thickness of the thinner one of the butted portions of a plurality of members, a narrow groove is provided in the other than the root face, and the butted portions are welded by a laser welding using a weld wire.

摘要翻译： 本发明提供一种制造用于核电厂的核心护罩的方法和核电站结构，其中在通过激光焊接制造具有核电厂的焊接结构的芯护罩的情况下容易组装槽部分 ，并且可以获得其中塑性变形区域和残余应力尽可能小的焊接接头部分，随着焊接部分的凝固收缩。 在构成芯护罩的多个构件的对接部分的焊接时，在对接部设置有根面，根面的长度设定为较薄的一个的厚度的25％〜95％ 多个构件的对接部分，在根面上设置有窄槽，并且通过使用焊丝的激光焊接焊接对接部。

公开(公告)号：US08816398B2

公开(公告)日：2014-08-26

申请号：US13824043

申请日：2011-07-06

申请人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

发明人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/15 ,  H01L29/423 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L29/0696 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer 27 including a channel located on a wall surface of an opening 28, a p-type barrier layer 6 whose end face is covered, a source layer 7 that is in contact with the p-type barrier layer, a gate electrode G located on the regrown layer, and a source electrode S located around the opening. In the semiconductor device, the source layer has a superlattice structure that is constituted by a stacked layer including a first layer (a layer) having a lattice constant smaller than that of the p-type barrier layer and a second layer (b layer) having a lattice constant larger than that of the first layer.

摘要翻译： 提供了一种垂直GaN基半导体器件，其中可以使用p型GaN势垒层改善导通电阻，同时提高击穿电压特性。 半导体器件包括再生长层27，其包括位于开口28的壁表面上的沟道，其端面被覆盖的p型势垒层6，与p型势垒层接触的源极层7， 位于再生长层上的栅电极G和位于开口周围的源电极S. 在半导体器件中，源极层具有超晶格结构，该超晶格结构由包括具有比p型势垒层的晶格常数小的晶格常数的第一层（层）的层叠层和具有比p型阻挡层的晶格常数小的第二层（b层） 大于第一层的晶格常数。

公开(公告)号：US20140110758A1

公开(公告)日：2014-04-24

申请号：US14124600

申请日：2011-06-08

申请人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

发明人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/66431 ,  H01L29/0623 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/8128

摘要： The semiconductor device is formed in the form of a GaN-based stacked layer including an n-type drift layer 4, a p-type layer 6, and an n-type top layer 8. The semiconductor device includes a regrown layer 27 formed so as to cover a portion of the GaN-based stacked layer that is exposed to an opening 28, the regrown layer 27 including a channel. The channel is two-dimensional electron gas formed at an interface between the electron drift layer and the electron supply layer. When the electron drift layer 22 is assumed to have a thickness of d, the p-type layer 6 has a thickness in the range of d to 10d, and a graded p-type impurity layer 7 whose concentration decreases from a p-type impurity concentration in the p-type layer is formed so as to extend from a (p-type layer/n-type top layer) interface to the inside of the n-type top layer.

摘要翻译： 半导体器件形成为包括n型漂移层4，p型层6和n型顶层8的GaN基叠层的形式。半导体器件包括如下形成的再生长层27 为了覆盖暴露于开口28的GaN基叠层的一部分，再生长层27包括沟道。 通道是在电子漂移层和电子供给层之间的界面处形成的二维电子气。 当假定电子漂移层22的厚度为d时，p型层6的厚度在d至10d的范围内，并且p型杂质层7的浓度从p型杂质降低 从（p型层/ n型顶层）界面向n型顶层的内部形成p型层的浓度。

公开(公告)号：US20130221434A1

公开(公告)日：2013-08-29

申请号：US13884229

申请日：2011-10-05

申请人： Masaya Okada ,  Makoto Kiyama ,  Yu Saitoh ,  Seiji Yaegashi ,  Mitsunori Yokoyama ,  Kazutaka Inoue

发明人： Masaya Okada ,  Makoto Kiyama ,  Yu Saitoh ,  Seiji Yaegashi ,  Mitsunori Yokoyama ,  Kazutaka Inoue

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L29/7827 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66666 ,  H01L29/7788 ,  H01L29/7789

摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer 15 having an opening 28 and the GaN-based stacked layer 15 includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. The vertical semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.

摘要翻译： 本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。 垂直半导体器件包括具有开口28的GaN基叠层15，GaN基叠层15包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN- 垂直半导体器件包括覆盖开口的再生长层27，包含电子漂移层22和电子供给层26的再生长层27，源电极S和位于 在再生长层上。 栅电极G覆盖长度对应于p型GaN基阻挡层的厚度的部分，并且终止在壁表面上的位置，该位置远离开口的底部。

公开(公告)号：US20130181255A1

公开(公告)日：2013-07-18

申请号：US13824043

申请日：2011-07-06

申请人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

发明人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L29/0696 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： There is provided a vertical GaN-based semiconductor device in which the on-resistance can be decreased while the breakdown voltage characteristics are improved using a p-type GaN barrier layer. The semiconductor device includes a regrown layer 27 including a channel located on a wall surface of an opening 28, a p-type barrier layer 6 whose end face is covered, a source layer 7 that is in contact with the p-type barrier layer, a gate electrode G located on the regrown layer, and a source electrode S located around the opening. In the semiconductor device, the source layer has a superlattice structure that is constituted by a stacked layer including a first layer (a layer) having a lattice constant smaller than that of the p-type barrier layer and a second layer (b layer) having a lattice constant larger than that of the first layer.

摘要翻译： 提供了一种垂直GaN基半导体器件，其中可以使用p型GaN势垒层改善导通电阻，同时提高击穿电压特性。 半导体器件包括再生长层27，其包括位于开口28的壁表面上的沟道，其端面被覆盖的p型势垒层6，与p型势垒层接触的源极层7， 位于再生长层上的栅电极G和位于开口周围的源电极S. 在半导体器件中，源极层具有超晶格结构，该超晶格结构由包括具有比p型势垒层的晶格常数小的晶格常数的第一层（层）的层叠层和具有比p型阻挡层的晶格常数小的第二层（b层） 大于第一层的晶格常数。

公开(公告)号：US20130168739A1

公开(公告)日：2013-07-04

申请号：US13824248

申请日：2011-07-06

申请人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

发明人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.

摘要翻译： 提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。 半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

公开(公告)号：US08890239B2

公开(公告)日：2014-11-18

申请号：US13884221

申请日：2011-07-26

申请人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

发明人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66712 ,  H01L29/7788 ,  H01L29/7789

摘要： In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. An opening 28 extends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.

摘要翻译： 在包括开口中的沟道的垂直半导体器件中，提供了可以提高其高频特性的半导体器件和制造半导体器件的方法。 半导体器件包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN基接触层7.开口28从顶层延伸并到达n型GaN- 基漂移层。 半导体器件包括以覆盖开口的方式定位的再生长层27，包括电子漂移层22和电子供给层26的再生长层27，源电极S，漏电极D和位于 再生长层。 假设用作一个电极的源极和用作另一个电极的漏电极构成电容器，则半导体器件包括降低电容器的电容的电容减小结构。

公开(公告)号：US08729562B2

公开(公告)日：2014-05-20

申请号：US13498767

申请日：2010-06-24

申请人： Masaya Okada ,  Makoto Kiyama

发明人： Masaya Okada ,  Makoto Kiyama

IPC分类号： H01L29/15

CPC分类号： H01L29/7786 ,  H01L29/0891 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body 15 having an opening 28, a regrown layer 27 including a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layer 27 includes an electron transit layer 22 and an electron supply layer 26. The GaN-based layered body includes a p-type GaN layer 6 whose end surface is covered by the regrown layer in the opening, and a p-side electrode 11 that is in ohmic contact with the p-type GaN layer is disposed.

摘要翻译： 提供了具有低导通电阻，高迁移率和良好的夹断特性的高电流半导体器件，并且即使漏极电压增加也不容易引起扭结现象，并且制造半导体器件的方法 。 本发明的半导体器件包括具有开口28的GaN基层叠体15，包括沟道的再生长层27，栅电极G，源电极S和漏电极D.再生层27包括： 电子转移层22和电子供给层26.该GaN基层叠体包括端面被开口部中的再生长层覆盖的p型GaN层6和与欧姆接触的p侧电极11 配置p型GaN层。

公开(公告)号：US20130181226A1

公开(公告)日：2013-07-18

申请号：US13822591

申请日：2011-07-06

申请人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

发明人： Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Makoto Kiyama

IPC分类号： H01L29/778 ,  H01L29/66

CPC分类号： H01L29/7788 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/3006 ,  H01L29/2003 ,  H01L29/4238 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7789

摘要： There are provided a semiconductor device in which a drain leak current can be reduced in the transistor operation while high vertical breakdown voltage is achieved and a method for producing the semiconductor device. In the semiconductor device, an opening 28 that extends from an n+-type contact layer 8 and reaches an n-type drift layer 4 through a p-type barrier layer 6 is formed. The semiconductor device includes a regrown layer 27 located so as to cover portions of the p-type barrier layer 6 and the like that are exposed to the opening, the regrown layer 27 including an undoped GaN channel layer 22 and a carrier supply layer 26; an insulating layer 9 located so as to cover the regrown layer 27; and a gate electrode G located on the insulating layer 9. In the p-type barrier layer, the Mg concentration A (cm−3)and the hydrogen concentration B (cm−3) satisfy 0.1

摘要翻译： 提供了一种半导体器件，其中在实现高的垂直击穿电压的同时，在晶体管操作中可以减小漏极漏电流，以及制造半导体器件的方法。 在半导体器件中，形成从n +型接触层8延伸并通过p型阻挡层6到达n型漂移层4的开口28。 半导体器件包括再生长层27，其被覆盖以覆盖暴露于开口的p型阻挡层6等的部分，再生长层27包括未掺杂的GaN沟道层22和载流子供给层26; 定位成覆盖再生长层27的绝缘层9; 和位于绝缘层9上的栅电极G.在p型阻挡层中，Mg浓度A（cm-3）和氢浓度B（cm-3）满足0.1