摘要:
Data storage systems having barriers that may reduce erasure flux and increase write-ability are provided. Data storage systems include a writing element. The writing element has a write pole with a flare region. A magnetic flux barrier is located along the write pole flare region. The magnetic flux barrier is illustratively made from an in-plane magnetically anisotropic material that has an easy plane of magnetization. In another embodiment, a data storage system includes a writing element having an air bearing surface and a shield at the air bearing surface. The shield has a magnetic permeability of approximately zero. The shield illustratively includes alternating layers of positive and negative permeabilities. The shield optionally includes a plurality of shields that may include top, bottom, and side shields.
摘要:
Data storage systems having barriers that may reduce erasure flux and increase write-ability are provided. Data storage systems include a writing element. The writing element has a write pole with a flare region. A magnetic flux barrier is located along the write pole flare region. The magnetic flux barrier is illustratively made from an in-plane magnetically anisotropic material that has an easy plane of magnetization. In another embodiment, a data storage system includes a writing element having an air bearing surface and a shield at the air bearing surface. The shield has a magnetic permeability of approximately zero. The shield illustratively includes alternating layers of positive and negative permeabilities. The shield optionally includes a plurality of shields that may include top, bottom, and side shields.
摘要:
A film structure and deposition method for creating laminated Fe—M—N and Fe—M—O—N films which retain good anisotropy after HA annealing are provided. Interleaved layers of thin alumina laminations between the Fe—M—[O]—N layers and sublayer alumina nanolaminations within the Fe—M—[O]—N layers create stable magnetic anisotropy in the film. The magnetic anisotropy in the film survives HA annealing at hardbake resist curing conditions in wafer manufacturing processes for GMR magnetic recording heads.
摘要:
The magnetic tape recording head of the present invention is formed with magnetic poles that are comprised of a laminated NiFeN/FeN structure. The method for fabricating the magnetic poles utilizes an additive photolithographic technique including a bilayer liftoff resist. In this fabrication method magnetic pole trenches are formed in the bilayer liftoff resist such that an undercut exists in the liftoff layer. Thereafter, the laminated NiFeN/FeN structure is sputter deposited into the trench, followed by the wet chemical removal of the bilayer resist.
摘要:
A magnetic head is provided which has first and second notches in a first pole piece layer adjacent first and second corners at the base of a gap layer wherein the gap layer does not undercut a base of a second pole tip. Field regions of the first pole piece layer which extend from the first and second notches slope upwardly from the notches for protecting components below the first pole piece layer. In one aspect of the invention a method of defining the gap layer sputter deposition and ion milling steps are employed to form a protective layer on first and second side walls of the second pole tip so that unwanted portions of the gap layer can be removed without undercutting the gap layer below the base of the second pole tip. In another aspect of the invention a method of making the first and second notches by sputter deposition and etching are employed to define a protective layer with first and second openings where the first and second notches are to be formed following by ion milling which mills through the openings through the notches until the protective layer is consumed.
摘要:
A magnetic head is provided which has first and second notches in a first pole piece layer adjacent first and second corners at the base of a gap layer wherein the gap layer does not undercut a base of a second pole tip. Field regions of the first pole piece layer which extend from the first and second notches slope upwardly from the notches for protecting components below the first pole piece layer. In one aspect of the invention a method of defining the gap layer sputter deposition and ion milling steps are employed to form a protective layer on first and second side walls of the second pole tip so that unwanted portions of the gap layer can be removed without undercutting the gap layer below the base of the second pole tip. In another aspect of the invention a method of making the first and second notches by sputter deposition and etching are employed to define a protective layer with first and second openings where the first and second notches are to be formed following by ion milling which mills through the openings through the notches until the protective layer is consumed.
摘要:
Disclosed is a target for a ferromagnetic sputtering apparatus formed of a single piece of ferromagnetic target material. The target has a circular central area, an annular outer area, and a plurality of interconnected slots of specified width in the single piece extending in circumferential directions about the central area, forming a plurality of specified width radial gaps between the circular central area and the annular outer area. The slots of the sputtering target may be arranged to provide tabs crossing the slots to provide structural support to the specified width slots.
摘要:
A specified amount of N2O or N2 is employed in a process gas of a DC magnetron for sputter depositing single or laminated films of NiFeCo—O—N or NiFeCo—N with a high uniaxial anisotropy HK after annealing these films along their hard axes. The films can be used for shield layers and/or pole piece layers in a magnetic head.
摘要:
The magnetic tape recording head of the present invention is formed with magnetic poles that are comprised of a laminated NiFeN/FeN structure. The method for fabricating the magnetic poles utilizes an additive photolithographic technique including a bilayer liftoff resist. In this fabrication method magnetic pole trenches are formed in the bilayer liftoff resist such that an undercut exists in the liftoff layer. Thereafter, the laminated NiFeN/FeN structure is sputter deposited into the trench, followed by the wet chemical removal of the bilayer resist.
摘要:
A layered magnetic structure with a seed layer on a substrate and a bulk layer on the seed layer. The seed layer is a gas-doped sendust layer with a thickness of 100-800 .ANG.. The bulk layer is sendust with a thickness of 0.3-10.0 .mu.m. The seed layer and the bulk layer have different weight compositions.