公开(公告)号：US4042454A

公开(公告)日：1977-08-16

申请号：US521388

申请日：1974-11-06

申请人： Ernst Haas ,  Joachim Martin ,  Konrad Reuschel ,  Manfred Schnoeller

发明人： Ernst Haas ,  Joachim Martin ,  Konrad Reuschel ,  Manfred Schnoeller

IPC分类号： C30B13/10 ,  C30B13/00 ,  C30B29/06 ,  C30B31/20 ,  C30B31/22 ,  H01L21/261 ,  G21G1/06

CPC分类号： C30B31/22 ,  C30B13/00 ,  C30B31/20 ,  H01L21/261 ,  Y10S148/153 ,  Y10S148/165

摘要： Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled radiation by thermal neutrons based on the measured conductivity to produce a desired degree of n-conductivity in the ultimately attained rods.

摘要翻译： n型的Si单晶通过区域熔化多晶硅棒在足以产生单晶棒的条件下产生，测量这种单晶棒的比电导率，并且基于所测量的导电率，使这种单晶棒受到热中子的受控辐射，以产生 在最终获得的杆中的n导电率的期望程度。

公开(公告)号：US4048508A

公开(公告)日：1977-09-13

申请号：US603680

申请日：1975-08-11

申请人： Joachim Martin ,  Ernst Haas ,  Manfred Schnoeller

发明人： Joachim Martin ,  Ernst Haas ,  Manfred Schnoeller

IPC分类号： C30B31/20 ,  G21G1/06 ,  G21K1/00 ,  G21K5/08 ,  H01L21/261 ,  B01J17/34

CPC分类号： G21K1/00 ,  C30B31/20 ,  G21K5/08

摘要： An apparatus for doping a semiconductor crystalline rod by nuclear or radiogenic reactions comprised of a hollow irradiation housing having axially and rotatably movable rod support means within the chamber thereof and a neutron conductive sleeve connected with the housing and providing communication between a neutron source and the housing chamber. Accurate and controlled doping of a semiconductor crystalline rod mounted on the rod support means within the housing chamber occurs via controlled rod movement in relation to the neutron source.

摘要翻译： 一种用于通过核或放射反应掺杂半导体晶体棒的装置，包括在其室内具有轴向和可旋转地移动的杆支撑装置的中空辐射壳体和与壳体连接并提供中子源和壳体之间的连通的中子导电套筒 房间。 安装在壳体室内的杆支撑装置上的半导体晶体棒的精确和受控的掺杂通过相对于中子源的受控棒移动发生。

公开(公告)号：US3967982A

公开(公告)日：1976-07-06

申请号：US595150

申请日：1975-07-11

申请人： Heinz-Herbert Arndt ,  Joachim Burtscher ,  Gustav Fischer ,  Ernst Haas ,  Joachim Martin ,  Gunter Raab ,  Manfred Schnoeller

发明人： Heinz-Herbert Arndt ,  Joachim Burtscher ,  Gustav Fischer ,  Ernst Haas ,  Joachim Martin ,  Gunter Raab ,  Manfred Schnoeller

IPC分类号： H01L21/033 ,  H01L21/261 ,  H01L21/263

CPC分类号： H01L21/033 ,  H01L21/261 ,  Y10S148/165

摘要： A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.

摘要翻译： 在合适的衬底上的诸如外延层的半导体层受到中子的受控轰击，由此半导体层的原子通过核反应转化成掺杂材料原子。

公开(公告)号：US4025365A

公开(公告)日：1977-05-24

申请号：US603678

申请日：1975-08-11

申请人： Joachim Martin ,  Ernst Haas ,  Konrad Reuschel ,  Manfred Schnoller

发明人： Joachim Martin ,  Ernst Haas ,  Konrad Reuschel ,  Manfred Schnoller

IPC分类号： G21G1/12 ,  C30B31/20 ,  G21H5/00 ,  H01L21/261 ,  H01L21/26

CPC分类号： H01L21/261 ,  C30B31/20 ,  G21H5/00 ,  Y10S148/003 ,  Y10S148/065 ,  Y10S148/165

摘要： A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with .gamma.-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein.

摘要翻译： 通过用在这种被照射的材料内触发核反应的γ光子照射期望的半导体材料以在其中形成掺杂剂原子来产生均匀掺杂的p导电半导体材料。

公开(公告)号：US4728371A

公开(公告)日：1988-03-01

申请号：US838326

申请日：1986-03-11

申请人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

发明人： Ernst W. Haas ,  Joachim Martin ,  Heinz Mitlehner ,  Reinhold Kuhnert

IPC分类号： C30B29/06 ,  C30B31/20 ,  H01L21/261 ,  H01L21/263

CPC分类号： C30B31/20 ,  H01L21/261 ,  Y10S148/165

摘要： A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.

摘要翻译： 根据反应Si30（n，γ）Si31β-P31通过中子照射在硅晶片中制造具有可调均匀掺杂的区域的方法包括以下步骤：在照射期间用不同厚度的中子吸收材料覆盖硅晶片 以及选择具有高吸收截面的同位素的材料，其在具有小或短寿命的核反应中产生稳定的同位素。 合适的同位素是B10，Cd113，Sm149，Gd155和Gd157。 光刻地产生这些区域。 通过这样的具体材料选择，可以使用非常小的层厚度，并且可以以高几何精度和大的穿透深度掺杂微细表面区域或区域。 该方法特别适用于制造功率晶闸管。