公开(公告)号：US09147792B2

公开(公告)日：2015-09-29

申请号：US13897915

申请日：2013-05-20

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

Abstract translation: 一种制造光伏器件的方法，包括将碲化镉层沉积到衬底上; 用包含氯和1-11，锌，汞或哥打尼碱或其组合的元素的化合物处理碲化镉层; 并对碲化镉层进行退火。 氯化物处理的光伏器件。

公开(公告)号：US20150380572A1

公开(公告)日：2015-12-31

申请号：US14845334

申请日：2015-09-04

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/0296 ,  H01L31/056 ,  H01L31/0224

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.

Abstract translation: 一种制造光伏器件的方法，包括将碲化镉层沉积到衬底上; 用包含氯和1-11，锌，汞或哥打尼碱或其组合的元素的化合物处理碲化镉层; 并对碲化镉层进行退火。 氯化物处理的光伏器件。

公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。

公开(公告)号：US20140273334A1

公开(公告)日：2014-09-18

申请号：US14212584

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Pawel Mrozek ,  Gang Xiong ,  San Yu

IPC: H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。

公开(公告)号：US20140273407A1

公开(公告)日：2014-09-18

申请号：US14211658

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Scott Jewhurst ,  Minh Huu Le ,  Haifan Liang ,  Hao Lin ,  Wei Liu ,  Minh Anh Nguyen ,  Zhi Wen Sun ,  Gang Xiong

IPC: H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/0296 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods and compositions for the surface cleaning and passivation of CdTe substrates usable in solar cells are disclosed. In some embodiments amine-containing chelators are used and in other embodiments phosphorus-containing chelators are used.

Abstract translation: 公开了用于太阳能电池中的CdTe基板的表面清洁和钝化的方法和组合物。 在一些实施方案中，使用含胺螯合剂，在其它实施方案中使用含磷螯合剂。

公开(公告)号：US09450115B2

公开(公告)日：2016-09-20

申请号：US14212584

申请日：2014-03-14

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Pawel Mrozek ,  Gang Xiong ,  San Yu

IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/073

CPC classification number: H01L31/022425 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/186 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method to improve CdTe-based photovoltaic device efficiency is disclosed, the method including steps for removing surface contaminants from a semiconductor absorber layer prior to the deposition or formation of a back contact layer on the semiconductor absorber layer, the surface contaminants removed using at least one of a dry etching process and a wet etching process.

Abstract translation: 公开了一种改善CdTe基光伏器件效率的方法，该方法包括在半导体吸收层上沉积或形成背接触层之前从半导体吸收体层去除表面污染物的步骤，至少使用至少去除表面污染物 干蚀刻工艺和湿蚀刻工艺之一。

公开(公告)号：US20130312824A1

公开(公告)日：2013-11-28

申请号：US13897915

申请日：2013-05-20

Applicant: First Solar, Inc.

Inventor： Scott Christensen ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  H01L31/0296

CPC classification number: H01L31/0296 ,  H01L31/022441 ,  H01L31/056 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/52 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of manufacturing a photovoltaic device including depositing a cadmium telluride layer onto a substrate; treating the cadmium telluride layer with a compound comprising chlorine and an element from Groups 1-11, zinc, mercury, or copernicium or a combination thereof; and annealing the cadmium telluride layer. A chloride-treated photovoltaic device.