公开(公告)号：US20140261685A1

公开(公告)日：2014-09-18

申请号：US14209094

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Feng Liao ,  Jigish Trivedi ,  Zhibo Zhao ,  Rick C. Powell ,  Long Cheng ,  Markus Gloeckler ,  Benyamin Buller ,  Igor Sankin ,  Jeremy Brewer

IPC: H01L31/0352 ,  H01L31/0203 ,  H01L31/0296

CPC classification number: H01L31/035272 ,  H01L31/0203 ,  H01L31/0296 ,  H01L31/1828 ,  Y02E10/543

Abstract: Embodiments include photovoltaic devices that include at least one absorber layer, e.g. CdTe and/or CdSxTe1-x (where 0≦x≦1), having an average grain size to thickness ratio from greater than 2 to about 50 and an average grain size of between about 4 μm and about 14 μm and methods for forming the same.

Abstract translation: 实施例包括光伏器件，其包括至少一个吸收层，例如 CdTe和/或CdSxTe1-x（其中0＆nlE; x＆nlE; 1），其平均晶粒尺寸与厚度之比大于2至约50，平均晶粒尺寸在约4μm至约14μm之间， 相同。

公开(公告)号：US20140261667A1

公开(公告)日：2014-09-18

申请号：US14209924

申请日：2014-03-13

Applicant: FIRST SOLAR, INC.

Inventor： Benyamin Buller ,  Igor Sankin ,  Long Cheng ,  Jigish Trivedi ,  Jianjun Wang ,  Kieran Tracy ,  Scott Christensen ,  Gang Xiong ,  Markus Gloeckler ,  San Yu

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/1828 ,  H01L31/022425 ,  H01L31/02966 ,  H01L31/046 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

Abstract: A back electrode for a PV device and method of formation are disclosed. A ZnTe material is provided over an absorber material and a MoNx material is provided over the ZnTe material. A Mo material may also be included in the back electrode above or below the MoNx layer and a metal layer may be also provided over the MoNx layer.

Abstract translation: 公开了一种用于PV器件的背面电极和形成方法。 在吸收材料上提供ZnTe材料，并且在ZnTe材料上提供MoNx材料。 在MoNx层上方或下方的背电极中也可以包含Mo材料，也可以在MoNx层上设置金属层。

公开(公告)号：US20210359152A1

公开(公告)日：2021-11-18

申请号：US17319989

申请日：2021-05-13

Applicant: First Solar, Inc.

Inventor： Dmitry Krasikov ,  Sachit Grover ,  Igor Sankin

IPC: H01L31/18 ,  H01L31/0296 ,  H01L31/06

Abstract: According to embodiments provided herein, the performance of photovoltaic device can be improved by rapidly heating an absorber layer of a device in open-circuit to a high temperature for a short period of time followed by rapid quenching. The rapid heating may be accomplished by one or more pulses of high intensity electromagnetic energy. The energy may be visible light. The energy may be absorbed primarily in the absorber layer, such that the absorber layer is preferentially heated, promoting chemical reactions of dopant complexes. The dopant chemical reactions disrupt compensating defect complexes that have formed in the device, and regenerate active carriers.

公开(公告)号：US11870002B2

公开(公告)日：2024-01-09

申请号：US17319989

申请日：2021-05-13

Applicant: First Solar, Inc.

Inventor： Dmitry Krasikov ,  Sachit Grover ,  Igor Sankin

IPC: H01L31/18 ,  H01L31/06 ,  H01L31/0296 ,  H01L31/073

CPC classification number: H01L31/1864 ,  H01L31/02963 ,  H01L31/06 ,  H01L31/073

Abstract: According to embodiments provided herein, the performance of photovoltaic device can be improved by rapidly heating an absorber layer of a device in open-circuit to a high temperature for a short period of time followed by rapid quenching. The rapid heating may be accomplished by one or more pulses of high intensity electromagnetic energy. The energy may be visible light. The energy may be absorbed primarily in the absorber layer, such that the absorber layer is preferentially heated, promoting chemical reactions of dopant complexes. The dopant chemical reactions disrupt compensating defect complexes that have formed in the device, and regenerate active carriers.

公开(公告)号：US10026861B2

公开(公告)日：2018-07-17

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18 ,  H01L31/0296 ,  H01L31/073 ,  H01L21/02

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

公开(公告)号：US20130098433A1

公开(公告)日：2013-04-25

申请号：US13653051

申请日：2012-10-16

Applicant: First Solar, Inc.

Inventor： Igor Sankin ,  Markus Gloeckler ,  Benyamin Buller ,  Kieran Tracy

IPC: H01L31/065 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L21/02411 ,  H01L21/02422 ,  H01L21/0248 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02562 ,  H01L31/02966 ,  H01L31/073 ,  H01L31/18 ,  H01L31/1828 ,  H01L31/1832 ,  Y02E10/543 ,  Y02P70/521

Abstract: An improved photovoltaic device and methods of manufacturing the same that includes an interface layer adjacent to a semiconductor absorber layer, where the interface layer includes a material in the semiconductor layer which decreases in concentration from the side of the interface layer contacting the absorber layer to an opposite side of the interface layer.

Abstract translation: 一种改进的光电器件及其制造方法，其包括与半导体吸收层相邻的界面层，其中界面层包括半导体层中的材料，该材料从接触吸收层的界面层的侧面减少到 接口层的相对侧。