公开(公告)号：US10559763B2

公开(公告)日：2020-02-11

申请号：US16186373

申请日：2018-11-09

Applicant: FUJIFILM Corporation

Inventor： Tomoaki Yoshioka ,  Masaaki Tsukase ,  Takahiko Ichiki ,  Daigo Sawaki

IPC: C07D471/04 ,  C07D519/00 ,  C07D209/86 ,  C07D493/04 ,  C07D495/04 ,  H01L51/00 ,  H01L27/30 ,  H01L51/42

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

公开(公告)号：US10483452B2

公开(公告)日：2019-11-19

申请号：US16208343

申请日：2018-12-03

Applicant: FUJIFILM Corporation

Inventor： Naoki Murakami ,  Daigo Sawaki

IPC: H01L41/18 ,  H01L41/187 ,  C01G25/00 ,  C01G33/00 ,  C01F17/00 ,  C23C14/08 ,  H01L41/09 ,  H01L41/316 ,  C23C16/40 ,  H01L41/047 ,  H01L41/08

Abstract: In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1≤x≤0.3 and 0

公开(公告)号：US10177320B2

公开(公告)日：2019-01-08

申请号：US14863962

申请日：2015-09-24

Applicant: FUJIFILM CORPORATION

Inventor： Tomoaki Yoshioka ,  Masaaki Tsukase ,  Takahiko Ichiki ,  Daigo Sawaki

IPC: H01L51/00 ,  C07D209/86 ,  C07D493/04 ,  C07D519/00 ,  H01L31/02 ,  C07D495/04 ,  H01L27/30 ,  C07D471/04 ,  H01L51/42

Abstract: The present invention provides a photoelectric conversion element having a photoelectric conversion film which exhibits excellent photoelectric conversion efficiency and responsiveness, an imaging device, an optical sensor, and a method of using a photoelectric conversion element. In the photoelectric conversion element of the invention, a photoelectric conversion material contains at least one selected from the group consisting of a compound represented by General formula (1), a compound represented by General formula (2), and a compound represented by General formula (3).

公开(公告)号：US09997721B2

公开(公告)日：2018-06-12

申请号：US15012203

申请日：2016-02-01

Applicant: FUJIFILM Corporation

Inventor： Yosuke Yamamoto ,  Masaaki Tsukase ,  Tomoaki Yoshioka ,  Naoyuki Hanaki ,  Takahiko Ichiki ,  Daigo Sawaki

IPC: H01L51/00 ,  C07D257/12 ,  C07D221/18 ,  C09B17/00 ,  C09B19/00 ,  C09B57/00 ,  C09B57/08 ,  H01L51/42 ,  H01L51/44

CPC classification number: H01L51/0072 ,  C07D221/18 ,  C07D257/12 ,  C09B17/00 ,  C09B19/00 ,  C09B57/00 ,  C09B57/001 ,  C09B57/008 ,  C09B57/08 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/0094 ,  H01L51/42 ,  H01L51/442 ,  Y02E10/549

Abstract: An object of the invention is to provide: a photoelectric conversion material which has excellent deposition stability such that when the photoelectric conversion material is used in a photoelectric conversion element, the change in the performance of the element due to variations in the concentration of the photoelectric conversion material is small; a photoelectric conversion element using the photoelectric conversion material; and an optical sensor and an imaging element including the photoelectric conversion element. The photoelectric conversion material of the invention is a compound (A) expressed by the following Formula (1).

公开(公告)号：US10361379B2

公开(公告)日：2019-07-23

申请号：US15234365

申请日：2016-08-11

Applicant: FUJIFILM CORPORATION

Inventor： Naoyuki Hanaki ,  Yosuke Yamamoto ,  Daigo Sawaki

IPC: H01L27/00 ,  H01L51/00 ,  H01L31/00 ,  H01L27/30 ,  H01L51/42

Abstract: An object of the present invention is to provide a photoelectric conversion element which exhibits excellent heat resistance and responsiveness, and a photosensor and an imaging device which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes: a transparent conductive film; a conductive film; and a photoelectric conversion film and an electron blocking layer which are disposed between the transparent conductive film and the conductive film, wherein the electron blocking layer contains a compound represented by the following Formula (1).

公开(公告)号：US11793082B2

公开(公告)日：2023-10-17

申请号：US16560325

申请日：2019-09-04

Applicant: FUJIFILM Corporation

Inventor： Naoki Murakami ,  Daigo Sawaki

IPC: H01L41/187 ,  H10N30/853 ,  C01G33/00 ,  C23C14/08 ,  C23C14/34 ,  H10N30/076

CPC classification number: H10N30/8554 ,  C01G33/006 ,  C23C14/08 ,  C23C14/34 ,  H10N30/076 ,  C01P2002/34 ,  C01P2002/50 ,  C01P2002/74 ,  C01P2006/40

Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element.
A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+δ[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35≤r/q

公开(公告)号：US11195983B2

公开(公告)日：2021-12-07

申请号：US16199296

申请日：2018-11-26

Applicant: FUJIFILM Corporation

Inventor： Daigo Sawaki ,  Naoki Murakami

IPC: H01L41/18 ,  H01L41/08 ,  H01L41/316 ,  C23C14/08 ,  C01G33/00 ,  H01L41/09 ,  H01L41/187 ,  H01L41/047 ,  H01L41/314

Abstract: Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0

公开(公告)号：US10388851B2

公开(公告)日：2019-08-20

申请号：US16040237

申请日：2018-07-19

Applicant: FUJIFILM Corporation

Inventor： Daigo Sawaki ,  Takami Arakawa

IPC: H01L41/18 ,  H01L41/187 ,  C23C14/08 ,  H01L41/09 ,  H01L41/316 ,  H01L41/08 ,  C23C14/00

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0

公开(公告)号：US10297774B2

公开(公告)日：2019-05-21

申请号：US15350472

申请日：2016-11-14

Applicant: FUJIFILM CORPORATION

Inventor： Daigo Sawaki

IPC: H01L51/42 ,  H01L31/10 ,  H01L27/30 ,  H01L27/146 ,  H01L51/44 ,  H01L51/00

Abstract: Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.