公开(公告)号：US12063864B2

公开(公告)日：2024-08-13

申请号：US17153809

申请日：2021-01-20

Applicant: FUJIFILM CORPORATION

Inventor： Takami Arakawa ,  Takayuki Naono

IPC: H10N30/853 ,  H10N30/00 ,  H10N30/045

CPC classification number: H10N30/8554 ,  H10N30/045 ,  H10N30/101

Abstract: A piezoelectric device and a manufacturing method thereof in which a piezoelectric film formed of a thin film of a lead zirconate titanate-based perovskite oxide is formed on a substrate, and at least a first region out of the first region and a second region of the piezoelectric film is irradiated with electromagnetic waves having a wavelength of 230 nm or less in a reducing atmosphere to provide a difference in piezoelectric characteristics between the first region and the second region so that the first region has a smaller absolute value of a piezoelectric constant d31 and a smaller dielectric loss tan δ than the second region.

公开(公告)号：US10217929B2

公开(公告)日：2019-02-26

申请号：US15968522

申请日：2018-05-01

Applicant: FUJIFILM Corporation

Inventor： Naoki Murakami ,  Takamichi Fujii ,  Takami Arakawa

IPC: H01L41/187 ,  B41J2/14 ,  H01L41/09 ,  B41J2/175

Abstract: The piezoelectric film includes a perovskite oxide which is represented by General Formula P, A1+δB1-x-yNbxNiyOz  General Formula P where A contains at least Pb, B contains at least Zr and Ti, and x and y respectively satisfy 0.1≤x≤0.3 and 0≤y≤0.75x. Although standard values of δ and z are δ=0 and z=3, these values may deviate from the standard values in a range in which a perovskite structure is capable of being obtained.

公开(公告)号：US11985899B2

公开(公告)日：2024-05-14

申请号：US17539422

申请日：2021-12-01

Applicant: FUJIFILM Corporation

Inventor： Kenichi Umeda ,  Yukihiro Okuno ,  Takami Arakawa

IPC: H10N30/079 ,  H10N30/00

CPC classification number: H10N30/10516 ,  H10N30/079

Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1−dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1αa2)(Zrb1Tib2βb3)Oc, where 0.5

公开(公告)号：US10388851B2

公开(公告)日：2019-08-20

申请号：US16040237

申请日：2018-07-19

Applicant: FUJIFILM Corporation

Inventor： Daigo Sawaki ,  Takami Arakawa

IPC: H01L41/18 ,  H01L41/187 ,  C23C14/08 ,  H01L41/09 ,  H01L41/316 ,  H01L41/08 ,  C23C14/00

Abstract: A piezoelectric element includes a substrate, and a lower electrode, a piezoelectric film, an adhesion layer, and an upper electrode provided on the substrate in this order, in which the piezoelectric film has a perovskite structure that is preferentially oriented to a (100) plane and is a composite oxide represented by the compositional formula Pb[(ZrxTi1-x)1-yNby]O3, where x satisfies 0

公开(公告)号：US09012670B2

公开(公告)日：2015-04-21

申请号：US13753379

申请日：2013-01-29

Applicant: FUJIFILM Corporation

Inventor： Takami Arakawa

IPC: C07F7/02 ,  B05D1/00 ,  B05D5/08 ,  B41J2/14 ,  B41J2/16 ,  B05D1/18

CPC classification number: B05D1/60 ,  B05D1/185 ,  B05D5/08 ,  B41J2/14233 ,  B41J2/1606 ,  B41J2202/03

Abstract: A method of manufacturing a water repellent film includes, before a formation step of forming an organic film on a substrate using a silane coupling agent by a vapor phase deposition method under film formation conditions, a step of specifying the film formation conditions using a test substrate of a same material as the substrate used in the formation step. The film formation condition specifying step includes: specifying film formation temperature to be not lower than a temperature at which the silane coupling agent evaporates and to be lower than a temperature at which the silane coupling agent bumps; and forming an organic film of the silane coupling agent on the test substrate at the specified film formation temperature, measuring by optical microscopic observation a time at which a bead of surplus water repellent material is formed, and specifying the film formation duration to be shorter than the measured time.

Abstract translation: 防水膜的制造方法包括：在成膜条件下，通过气相沉积法在硅烷偶联剂的基板上形成有机膜的形成工序之前，使用试验基板 与在形成步骤中使用的基材相同的材料。 成膜条件确定步骤包括：将成膜温度指定为不低于硅烷偶联剂蒸发的温度并低于硅烷偶联剂凸起的温度; 在规定的成膜温度下在测试基板上形成硅烷偶联剂的有机膜，通过光学显微镜观察形成多余的防水材料的珠的时间，并将成膜持续时间设定为短于 测量时间。

公开(公告)号：US10147868B2

公开(公告)日：2018-12-04

申请号：US15701026

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Shin Ozawa ,  Takami Arakawa

IPC: H04R17/00 ,  H01L41/18 ,  H01L41/09 ,  H01L41/113 ,  B06B1/06 ,  H01L41/047 ,  H01L41/053 ,  H01L41/257 ,  H01L41/29 ,  H01L41/37

Abstract: Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.

公开(公告)号：US10011111B2

公开(公告)日：2018-07-03

申请号：US15439564

申请日：2017-02-22

Applicant: FUJIFILM Corporation

Inventor： Naoki Murakami ,  Takami Arakawa ,  Takamichi Fujii

IPC: H01L41/187 ,  B41J2/14 ,  B41J2/16 ,  C23C14/34 ,  C23C14/08 ,  H01L41/047 ,  H01L41/18 ,  C23C14/00 ,  H01L41/00

CPC classification number: B41J2/14209 ,  B41J2/14233 ,  B41J2/1607 ,  B41J2/1646 ,  C01G33/00 ,  C01P2002/34 ,  C01P2002/72 ,  C04B35/493 ,  C04B2235/3251 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C23C14/00 ,  C23C14/08 ,  C23C14/088 ,  C23C14/3471 ,  H01L41/00 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/183 ,  H01L41/1876 ,  H01L41/316

Abstract: A piezoelectric film of the present invention is a piezoelectric film including a perovskite oxide represented by the following formula (P), in which crystal phases of the perovskite oxide include tetragonal crystals and rhombohedral crystals at a ratio that satisfies the following formula (1). A1+δ[(ZrxTi1−x)1−aNba]Oy  (P) 0.70≤rhombohedral crystals/(rhombohedral crystals+tetragonal crystals)≤0.95   (1), where, in the formula (P), A is an A-site element primarily containing Pb, and Zr, Ti, and Nb are B-site elements. x is equal to or higher than 0.4 and lower than 1, excluding x of equal to or higher than 0.51 and equal to or lower than 0.53. a is equal to or higher than 0.08.

公开(公告)号：US09242466B2

公开(公告)日：2016-01-26

申请号：US14792564

申请日：2015-07-06

Applicant: FUJIFILM Corporation ,  Material Design Factory Co., Ltd.

Inventor： Takami Arakawa ,  Hiroshi Nakayama

IPC: B41J2/135 ,  B41J2/14 ,  C09D183/04 ,  B41J2/16

CPC classification number: B41J2/1433 ,  B41J2/1606 ,  B41J2/162 ,  B41J2/1642 ,  C09D183/04

Abstract: The present invention provides a method for manufacturing a water-repellent film, including an adhesion precursor film forming step of forming, on a substrate, an adhesion precursor film mainly of a Si—O bond with hydrogen directly bonded to Si; an irradiating step of irradiating the adhesion precursor film with excitation energy to increase an OH group present on a surface of the adhesion precursor film to thereby change the adhesion precursor film into an adhesion reinforcing film; and an organic film coating step of coating the adhesion reinforcing film with an organic film by using a silane coupling agent, wherein a content of the hydrogen directly bonded to Si in the adhesion precursor film is 1.0×1017 atoms/cm2 or more in terms of a H2 molecule.

Abstract translation: 本发明提供一种防水膜的制造方法，其特征在于，具有粘接前体膜形成工序，在基板上形成主要与Si-O键形成的粘合前体膜，与氢直接键合的Si; 照射步骤，用激发能照射粘附前体膜，以增加存在于粘合前体膜表面上的OH基团，从而将粘合前体膜改变为粘合增强膜; 以及通过使用硅烷偶联剂用有机膜涂布粘合强化膜的有机膜涂布步骤，其中与粘合前体膜中的Si直接键合的氢的含量为1.0×10 17原子/ cm 2以上，以 H2分子。