公开(公告)号：US20200301281A1

公开(公告)日：2020-09-24

申请号：US16896708

申请日：2020-06-09

Applicant: FUJIFILM Corporation

Inventor： Yasunori Yonekuta ,  Naoya Hatakeyama ,  Tsutomu Yoshimura

IPC: G03F7/20 ,  C08F212/08 ,  G03F7/004 ,  C08F220/18 ,  C08F220/56 ,  G03F7/039 ,  G03F7/32

Abstract: A resist composition includes a resin (A) including at least one repeating unit selected from the group consisting of a repeating unit represented by General Formula (1) as defined herein and a repeating unit represented by General Formula (2) as defined herein, and a repeating unit having an acid-decomposable group.

公开(公告)号：US11687001B2

公开(公告)日：2023-06-27

申请号：US16807496

申请日：2020-03-03

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US10923769B2

公开(公告)日：2021-02-16

申请号：US16251089

申请日：2019-01-18

Applicant: FUJIFILM Corporation

Inventor： Shohei Kataoka ,  Naoya Hatakeyama

IPC: H01M10/0568 ,  H01M10/0569 ,  H01M10/0567 ,  H01M10/0525

Abstract: Provided is an electrolytic solution for a non-aqueous secondary battery containing an electrolyte, an organic solvent, and a compound represented by any of General Formulae (I) to (III) and a non-aqueous secondary battery in which the electrolytic solution for a non-aqueous secondary battery is used. In the formulae, M represents a transition metal.
R1, R2, and R3 represent a specific substituent. a represents an integer of 0 to 5. b represents an integer of 0 or more. c represents an integer of 0 to 5.
Ar1 represents an aromatic ring. In General Formula (II), a plurality of Ar1's may be linked together.
Ar2 represents a nitrogen-containing aromatic hetero ring.

公开(公告)号：US20240419071A1

公开(公告)日：2024-12-19

申请号：US18808397

申请日：2024-08-19

Applicant: FUJIFILM Corporation

Inventor： Tsutomu YOSHIMURA ,  Naoya Hatakeyama ,  Akiyoshi Goto

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/039

Abstract: According to an actinic ray-sensitive or radiation-sensitive resin composition including a resin (A) including a repeating unit (a1) having a partial structure in which a phenolic hydroxy group is protected with a structure represented by a formula (1) below, a pattern in which generation of defects is suppressed can be formed: wherein X represents a halogen atom or an electron-withdrawing group, R1 represents a hydroxy group or an organic group, k represents an integer of 0 to 3, n represents an integer of 0 to (4+2k), m represents an integer of 1 to (5+2k), satisfying a relationship of 1≤(n+m)≤(5+2k), and a plurality of R1's and X's may be the same or different according to an integer of n and m respectively, and * represents a bonding site to an oxygen atom of the phenolic hydroxy group.

公开(公告)号：US20220146937A1

公开(公告)日：2022-05-12

申请号：US17581177

申请日：2022-01-21

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Yasunori Yonekuta ,  Takamitsu Tomiga ,  Kohei Higashi ,  Fumihiro Yoshino

IPC: G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/004 ,  G03F7/038 ,  G03F7/38 ,  G03F7/40

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains (A) a resin having a polarity that increases by an action of an acid, (B) a photoacid generator, (P) an amine oxide, and (D) an acid diffusion control agent (provided that acid diffusion control agents corresponding to the amine oxide are excluded), in which a content of the amine oxide (P) is from 0.01 ppm to 1,000 ppm with respect to a total mass of the actinic ray-sensitive or radiation-sensitive resin composition, and a mass ratio of the acid diffusion control agent (D) to the amine oxide (P) is more than 1 and 10,000 or less.

公开(公告)号：US11281103B2

公开(公告)日：2022-03-22

申请号：US15700518

申请日：2017-09-11

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Naoki Inoue ,  Naohiro Tango ,  Michihiro Shirakawa ,  Akiyoshi Goto

IPC: G03F7/11 ,  G03F7/20 ,  C08F20/36 ,  C08K5/32 ,  C08L33/10 ,  C08L33/16 ,  C08L101/00 ,  C08F26/02 ,  G03F7/32 ,  C09D133/04 ,  H01L21/027 ,  G03F7/38 ,  G03F7/039 ,  C08K5/33

Abstract: A composition for forming an upper layer film is applied onto a resist film formed using an actinic ray-sensitive or radiation-sensitive resin composition, and includes a resin X and a compound A having a radical trapping group. A pattern forming method includes applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, applying the composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, exposing the resist film having the upper layer film formed thereon, and developing the exposed resist film using a developer including an organic solvent to form a pattern.

公开(公告)号：US09862605B2

公开(公告)日：2018-01-09

申请号：US14463291

申请日：2014-08-19

Applicant: FUJIFILM Corporation

Inventor： Jun Tanabe ,  Naoya Hatakeyama ,  Michio Ono

IPC: C01B21/082 ,  B01J27/24 ,  H01M4/96 ,  H01M4/90 ,  H01M8/1018

CPC classification number: C01B21/082 ,  B01J27/24 ,  C01B21/0828 ,  C01P2006/12 ,  H01M4/9041 ,  H01M4/96 ,  H01M2008/1095

Abstract: A problem to be solved by the invention is to provide a production method of a nitrogen-containing carbon alloy that has sufficiently high redox activity or has a large number of reaction electrons of redox reaction. A method for producing a nitrogen-containing carbon alloy comprising baking a precursor containing a nitrogen-containing organic compound and an inorganic metal salt containing one or more kinds of Fe, Co, Ni, Mn and Cr, wherein: the precursor satisfies one of the requirements (a) and (b) below, and, the nitrogen-containing organic compound is one of a compound represented by the formula (1) below, a tautomer of the compound, and a salt and hydrate thereof: (a) the precursor contains the inorganic metal salt in an amount exceeding 45% by mass based on the total amount of the nitrogen-containing organic compound and the inorganic metal salt of the precursor, in which the total amount includes the mass of hydrated water in the nitrogen-containing organic compound and the inorganic metal salt, and the amount of the inorganic metal salt includes the mass of hydrated water in the inorganic metal, (b) the precursor further contains a β-diketone metal complex:

公开(公告)号：US11835849B2

公开(公告)日：2023-12-05

申请号：US18109399

申请日：2023-02-14

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US11650501B2

公开(公告)日：2023-05-16

申请号：US16807496

申请日：2020-03-03

Applicant: FUJIFILM Corporation

Inventor： Tsutomu Yoshimura ,  Yasunori Yonekuta ,  Naoya Hatakeyama ,  Kohei Higashi ,  Yoichi Nishida

IPC: G03F7/039 ,  C08F220/18 ,  C08F212/14 ,  C08F212/08 ,  G03F7/004 ,  G03F7/038 ,  C07C381/12

CPC classification number: G03F7/039 ,  C07C381/12 ,  C08F212/08 ,  C08F212/24 ,  C08F212/30 ,  C08F220/1804 ,  C08F220/1809 ,  G03F7/0045 ,  G03F7/038

Abstract: Provided are an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A),



in which the resin (A) includes a repeating unit having an acidic group and a repeating unit having an acid-decomposable group,
a content of the repeating unit having an acidic group is 15% by mole or more with respect to all the repeating units in the resin (A),
a content of the repeating unit having an acid-decomposable group is more than 20% by mole with respect to all the repeating units in the resin (A),
a glass transition temperature of the resin (A) is 145° C. or lower, and
the actinic ray-sensitive or radiation-sensitive resin composition is used for formation of a film having a film thickness of 2 μm or more; and a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

公开(公告)号：US11150557B2

公开(公告)日：2021-10-19

申请号：US16014161

申请日：2018-06-21

Applicant: FUJIFILM Corporation

Inventor： Naoya Hatakeyama ,  Akiyoshi Goto ,  Yasunori Yonekuta

IPC: G03F7/038 ,  C08F30/04 ,  G03F7/075 ,  G03F7/039 ,  G03F7/32 ,  G03F7/20

Abstract: Provided are a pattern forming method including a film forming step of forming a film using a resin composition containing a resin (A) obtained from a monomer having a silicon atom, the monomer having a turbidity of 1 ppm or less based on JIS K0101:1998 using formazin as a reference material and an integrating sphere measurement system as a measurement system, in which the pattern forming method is capable of remarkably improving scum defect performance, particularly in formation of an ultrafine pattern (for example, a line-and-space pattern having a line width of 50 nm or less, or a hole pattern having a hole diameter of 50 nm or less); and a method for manufacturing an electronic device, using the pattern forming method.