POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号:US20150287609A1

    公开(公告)日:2015-10-08

    申请号:US14736711

    申请日:2015-06-11

    IPC分类号: H01L21/306

    摘要: A polishing composition of the present invention is to be used for polishing an object including a portion containing a high-mobility material and a portion containing a silicon material. The polishing composition comprises an oxidizing agent and abrasive grains having an average primary particle diameter of 40 nm or less. The polishing composition preferably further contains a hydrolysis-suppressing compound that bonds to a surface OH group of the portion containing a silicon material of the object to function to suppress hydrolysis of the portion containing a silicon material. Alternatively, a polishing composition of the present invention contains abrasive grains, an oxidizing agent, and a hydrolysis-suppressing compound. The polishing composition preferably has a neutral pH.

    摘要翻译: 本发明的抛光组合物用于抛光包含含有高迁移率材料的部分和含有硅材料的部分的物体。 抛光组合物包含平均一次粒径为40nm以下的氧化剂和磨粒。 抛光组合物优选还含有水解抑制化合物,其结合到含有该物质的硅材料的部分的表面OH基上,以抑制含硅材料部分的水解。 或者,本发明的研磨用组合物含有磨粒,氧化剂和水解抑制性化合物。 抛光组合物优选具有中性pH。

    POLISHING COMPOSITION
    3.
    发明申请

    公开(公告)号:US20170275498A1

    公开(公告)日:2017-09-28

    申请号:US15509272

    申请日:2015-09-28

    IPC分类号: C09G1/02 C09K3/14

    摘要: Provided is a polishing composition which is suitable for polishing an object of polishing having a layer containing a high mobility material that has higher carrier mobility than Si, suppresses excessive dissolution of the layer containing a high mobility material, and is capable of efficient polishing.Disclosed is a polishing composition that is used for polishing an object of polishing having a layer containing a high mobility material that has higher carrier mobility than Si, the polishing composition including abrasive grains and at least one salt compound selected from the group consisting of a salt of a monovalent acid, a salt of a divalent acid, a salt of a trivalent acid, and a halide salt, in which the electrical conductivity is 1 mS/cm or higher, and a content of hydrogen peroxide is less than 0.1% by mass.

    POLISHING COMPOSITION
    6.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号:US20160215170A1

    公开(公告)日:2016-07-28

    申请号:US15023788

    申请日:2014-09-02

    发明人: Shuichi TAMADA

    IPC分类号: C09G1/02 H01L21/306

    摘要: The present invention provides a polishing composition having excellent storage stability. The present invention relates to a polishing composition including abrasive grains and an oxidant containing a halogen atom, a value (A/B) obtained by dividing the total number (A) (unit: number) of silanol groups contained in the abrasive grains in the polishing composition by a concentration (B) (unit: % by mass) of the oxidant in the polishing composition being 8×1023 or less.

    摘要翻译: 本发明提供了具有优异的储存稳定性的抛光组合物。 本发明涉及包含磨粒和含有卤素原子的氧化剂的抛光组合物,通过将磨粒中含有的硅烷醇基的总数(A)(单位:数)除以上述值得到的值(A / B) 研磨用组合物中的氧化剂浓度(B)(单位:质量%)的研磨组合物为8×1023以下。