公开(公告)号：US20190015947A1

公开(公告)日：2019-01-17

申请号：US16070359

申请日：2016-12-16

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO ,  Hisanori TANSHO ,  Yusuke SUGA

IPC: B24B37/04 ,  H01L21/306 ,  C09G1/02

Abstract: To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.4, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the second standard solution is 65% or less.

公开(公告)号：US20170081554A1

公开(公告)日：2017-03-23

申请号：US15309281

申请日：2015-06-17

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA

IPC: C09G1/02 ,  H01L21/306 ,  B24B37/24 ,  H01L21/02

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  B24B37/24 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/30625

Abstract: Provided is a composition for polishing silicon wafers, having an excellent effect of reducing haze and having low agglomerating property. A composition for polishing silicon wafers provided here includes: an amido group-containing polymer A; and an organic compound B not containing an amido group. The amido group-containing polymer A has, on a main chain, a building block S derived from a monomer represented by General Formula (1). Molecular weight MA of the amido group-containing polymer A and molecular weight MB of the organic compound B have a relation satisfying 200≦MB

公开(公告)号：US20210189177A1

公开(公告)日：2021-06-24

申请号：US16761302

申请日：2018-10-19

Applicant: FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20230073290A1

公开(公告)日：2023-03-09

申请号：US17870663

申请日：2022-07-21

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20150376464A1

公开(公告)日：2015-12-31

申请号：US14767494

申请日：2014-02-10

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Maki ASADA ,  Yusuke SUGA

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/02052

Abstract: The present invention provides a polishing composition comprising an abrasive, a water-soluble polymer and water. The polishing composition has a volume average particle diameter DA of grains in the polishing composition of 20 nm to 60 nm measured by dynamic light scattering at a concentration equivalent to 0.2% abrasive content by mass.

Abstract translation: 本发明提供一种抛光组合物，其包括研磨剂，水溶性聚合物和水。 抛光组合物的研磨用组合物中的粒径的体积平均粒径DA为20nm〜60nm，通过动态光散射测定，其浓度等于0.2质量％的磨料含量。