公开(公告)号：US20160272846A1

公开(公告)日：2016-09-22

申请号：US14777841

申请日：2014-03-14

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO

IPC: C09G1/02 ,  C08F216/06 ,  C09G1/16 ,  H01L21/02

CPC classification number: C09G1/02 ,  C08F216/06 ,  C09G1/16 ,  C09K3/1436 ,  C09K3/1454 ,  H01L21/02024

Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

Abstract translation: 本发明提供一种抛光组合物，其包含水溶性聚合物，其具有包含多个具有不同SP值的重复单元种类的分子结构，以及抛光组合物，其通过规定的方法确定时具有规定范围内的蚀刻速率和磨料吸附。 还提供了使用研磨剂，碱性化合物，具有碱性水解官能团的水溶性聚合物和水来制造抛光组合物的方法。 该方法包括获得至少包含碱性化合物的试剂A和获得至少包含水溶性聚合物H的试剂B的步骤。

公开(公告)号：US20210189177A1

公开(公告)日：2021-06-24

申请号：US16761302

申请日：2018-10-19

Applicant: FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20160122591A1

公开(公告)日：2016-05-05

申请号：US14895318

申请日：2014-05-02

Applicant: FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO ,  Yoshio MORI

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/02052

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

Abstract translation: 本发明提供了在磨料存在下使用的硅晶片抛光组合物。 该组合物包括硅晶片抛光促进剂，含酰胺基聚合物和水。 含酰胺基的聚合物在其主链中具有建筑单元A. 构成单元A包含构成含酰胺基聚合物的主链的主链碳原子和仲酰胺基或叔酰胺基。 构成仲酰胺基或叔酰胺基的羰基碳原子与主链碳原子直接相连。

公开(公告)号：US20190077992A1

公开(公告)日：2019-03-14

申请号：US16185666

申请日：2018-11-09

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO

IPC: C09G1/02 ,  C08F216/06 ,  H01L21/306

Abstract: Provided are polishing compositions comprising a water-soluble polymer and water. The water-soluble polymer of an embodiment has a repeat unit that does not have any hydroxyl groups, and the water-soluble polymer has a hydroxyl group content in a range of 4 mmol/g or higher and 21 mmol/g or lower. The water-soluble polymer of another embodiment has a repeat unit A that has a hydroxyl group and a repeat unit B, and the number of moles of the repeat unit B in the total number of moles of all the repeat units of the water-soluble polymer is 5% or greater.

公开(公告)号：US20190062595A1

公开(公告)日：2019-02-28

申请号：US16074994

申请日：2017-02-08

Applicant: FUJIMI INCORPORATED

Inventor： Megumi TANIGUCHI ,  Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO ,  Hisanori TANSHO

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306 ,  H01L21/02

Abstract: The present invention relates to a polishing composition containing an abrasive, a water-soluble polymer, an anionic surfactant, a basic compound, and water, in which the anionic surfactant has an oxyalkylene unit, and an average addition mole number of the oxyalkylene unit of the anionic surfactant is more than 3 and 25 or less. According to the present invention, it is possible to provide a polishing composition which can reduce the haze of a polished object and is also excellent in a polishing removal rate.

公开(公告)号：US20190015947A1

公开(公告)日：2019-01-17

申请号：US16070359

申请日：2016-12-16

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO ,  Hisanori TANSHO ,  Yusuke SUGA

IPC: B24B37/04 ,  H01L21/306 ,  C09G1/02

Abstract: To provide a polishing composition capable of realizing a polished surface having smoothness and few defects. A polishing composition contains a water-soluble polymer satisfying the following two conditions (A) and (B): Condition (A): in a first standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.0, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the first standard solution is 10% or more; and Condition (B): in a second standard solution which contains silica having an average primary particle size of 35 nm, the water-soluble polymer, ammonia, and water and in which the concentration of the silica is 0.48% by mass, the concentration of the water-soluble polymer is 0.0125% by mass, and the pH is 10.4, the adsorption ratio which is a ratio of the amount of the water-soluble polymer adsorbed to the silica to the total amount of the water-soluble polymer contained in the second standard solution is 65% or less.

公开(公告)号：US20170253767A1

公开(公告)日：2017-09-07

申请号：US15602679

申请日：2017-05-23

Applicant: FUJIMI INCORPORATED ,  TOAGOSEI CO., LTD.

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Taiki ICHITSUBO ,  Yoshio MORI

IPC: C09G1/02 ,  B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  B24B37/04

Abstract: This invention provides a silicon wafer polishing composition used in the presence of an abrasive. The composition comprises a silicon wafer polishing accelerator, an amide group-containing polymer, and water. The amide group-containing polymer has a building unit A in its main chain. The building unit A comprises a main chain carbon atom constituting the main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group. The carbonyl carbon atom constituting the secondary amide group or tertiary amide group is directly coupled to the main chain carbon atom.

公开(公告)号：US20230174821A1

公开(公告)日：2023-06-08

申请号：US17910895

申请日：2021-03-04

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Taiki ICHITSUBO

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a polishing composition that contains a cellulose derivative and can improve the polishing removability and enhance the wettability of a polished surface of a silicon wafer. The polishing composition contains an abrasive, a cellulose derivative, a basic compound, and water. Here, the polishing composition has a zeta potential of -24.0 mV or more.

公开(公告)号：US20230073290A1

公开(公告)日：2023-03-09

申请号：US17870663

申请日：2022-07-21

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Hisanori TANSHO ,  Yusuke SUGA ,  Taiki ICHITSUBO ,  Takayuki TAKEMOTO ,  Naohiko SAITO ,  Michihiro KAAI

IPC: C09G1/02 ,  B24B37/04

Abstract: Provided is a polishing composition which contains a water-soluble polymer and is suitable for reducing LPDs. The polishing composition provided in this application includes an abrasive, a water-soluble polymer, and a basic compound. In the polishing composition, the content of a reaction product of a polymerization initiator and a polymerization inhibitor is 0.1 ppb or less of the polishing composition on a weight basis.

公开(公告)号：US20220186078A1

公开(公告)日：2022-06-16

申请号：US17442712

申请日：2020-03-25

Applicant: FUJIMI INCORPORATED

Inventor： Kohsuke TSUCHIYA ,  Maki ASADA ,  Taiki ICHITSUBO

IPC: C09G1/02 ,  C09K3/14

Abstract: Provided is a polishing composition having excellent capability of reducing haze on the surface of an object to be polished. The polishing composition provided by the present invention includes an abrasive, a basic compound, a water-soluble polymer, and water. The water-soluble polymer includes at least a water-soluble polymer P1 and a water-soluble polymer P2. Here, the water-soluble polymer P1 is an acetalized polyvinyl alcohol-based polymer, and the water-soluble polymer P2 is a water-soluble polymer other than the acetalized polyvinyl alcohol-based polymer.