摘要:
A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions.
摘要:
A broadband quantum cascade laser (QCL) source includes one or more QCLs having an active region designed based on a diagonal laser transition. The QCL source may include multiple QCLs formed in an array or the QCL source may comprise a single QCL device. Although each QCL provides an emission spectrum comprising a small range of wavelengths at a given applied voltage, changes in the applied operating voltage result in changes in the emission spectrum of the QCL due to the Stark shift. When the QCL source comprises a plurality of QCLs formed in an array, at least some of the elements in the array may receive different applied operating voltages such that the combined output spectrum of the array is broader than that achievable by a single QCL. When the QCL source comprises a single QCL device, an applied operating voltage may be swept through a range of applied voltages such that that combined output spectrum over one sweep cycle is broader than the output spectrum of the QCL device when a static operating voltage is applied. Alternatively, the single QCL device may comprise multiple independent gain sections, wherein each of the independent gain sections is configured to operate at a different voltages to provide a broadband output spectrum.
摘要:
A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.
摘要:
A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.
摘要:
A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.
摘要:
A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.
摘要:
A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
摘要:
Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.
摘要:
A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.
摘要:
A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design). The performance (tuning range, line width, power level) is comparable to that of external grating tunable semiconductor lasers, but the proposed design is much smaller and much easier to manufacture.