QUANTUM CASCADE LASER SOURCE WITH ULTRABROADBAND SPECTRAL COVERAGE
    1.
    发明申请
    QUANTUM CASCADE LASER SOURCE WITH ULTRABROADBAND SPECTRAL COVERAGE 审中-公开
    量子CASCADE激光源与超宽带光谱覆盖

    公开(公告)号:US20130148678A1

    公开(公告)日:2013-06-13

    申请号:US13639533

    申请日:2011-03-28

    IPC分类号: H01S5/34 H01L33/04 H01S5/024

    摘要: A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions.

    摘要翻译: 宽带量子级联激光器包括多个增益区域和设置在至少两个增益区域之间的间隔层。 增益区域和间隔层的布置和特性可被配置为减小增益区域之间的交叉吸收。 例如,一个增益区域可以被配置为在另一个增益区域产生吸收效应的能量范围内产生增益。 可以选择间隔层的厚度以分离由相邻增益区域产生的光学模式,同时仍然产生来自量子级联激光器的单个宽带输出。 在增益区域内的增益级之间的增益竞争可以通过在多个增益区域之间用增益曲线重叠分割来减轻。

    BROADBAND QUANTUM CASCADE LASER SOURCE
    2.
    发明申请
    BROADBAND QUANTUM CASCADE LASER SOURCE 审中-公开
    宽带量子CASCADE激光源

    公开(公告)号:US20130208743A1

    公开(公告)日:2013-08-15

    申请号:US13816385

    申请日:2011-08-02

    IPC分类号: H01S5/125

    摘要: A broadband quantum cascade laser (QCL) source includes one or more QCLs having an active region designed based on a diagonal laser transition. The QCL source may include multiple QCLs formed in an array or the QCL source may comprise a single QCL device. Although each QCL provides an emission spectrum comprising a small range of wavelengths at a given applied voltage, changes in the applied operating voltage result in changes in the emission spectrum of the QCL due to the Stark shift. When the QCL source comprises a plurality of QCLs formed in an array, at least some of the elements in the array may receive different applied operating voltages such that the combined output spectrum of the array is broader than that achievable by a single QCL. When the QCL source comprises a single QCL device, an applied operating voltage may be swept through a range of applied voltages such that that combined output spectrum over one sweep cycle is broader than the output spectrum of the QCL device when a static operating voltage is applied. Alternatively, the single QCL device may comprise multiple independent gain sections, wherein each of the independent gain sections is configured to operate at a different voltages to provide a broadband output spectrum.

    摘要翻译: 宽带量子级联激光器(QCL)源包括具有基于对角激光器转换设计的有源区域的一个或多个QCL。 QCL源可以包括在阵列中形成的多个QCL,或者QCL源可以包括单个QCL设备。 虽然每个QCL提供了在给定的施加电压下包括小范围的波长的发射光谱,但是施加的工作电压的变化导致由于斯塔克位移引起的QCL的发射光谱的变化。 当QCL源包括以阵列形成的多个QCL时,阵列中的至少一些元件可以接收不同的施加的工作电压,使得阵列的组合输出光谱比单个QCL可实现的更宽。 当QCL源包括单个QCL器件时,所施加的工作电压可以扫过所施加的电压范围,使得当施加静态工作电压时,在一个扫描周期上的组合输出光谱宽于QCL器件的输出光谱 。 或者,单个QCL器件可以包括多个独立增益部分,其中每个独立增益部分被配置为在不同的电压下工作以提供宽带输出光谱。

    Plasmonic Polarizer
    5.
    发明申请
    Plasmonic Polarizer 有权
    等离子体偏振器

    公开(公告)号:US20110315898A1

    公开(公告)日:2011-12-29

    申请号:US13223409

    申请日:2011-09-01

    IPC分类号: G21K1/10

    摘要: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

    摘要翻译: 辐射发射装置(例如,激光器)包括被配置为产生沿着第一偏振方向线性偏振的辐射发射的有源区和由绝缘层和绝缘层上的金属层覆盖的器件面。 金属层限定了孔,通过该孔,来自有源区的辐射发射可通过该孔被传输并耦合到金属层的外侧上的表面等离子体。 孔的长轴与第一偏振方向不正交,并且顺序的特征部分被限定在器件面或金属层中或金属层中并与孔隔开,其中该系列特征被配置为 操纵表面等离子体激元并将表面等离子体激元以不同于第一偏振方向的第二偏振方向散射到远场中。

    Plasmonic polarizer
    6.
    发明授权
    Plasmonic polarizer 有权
    等离子体偏振器

    公开(公告)号:US08552410B2

    公开(公告)日:2013-10-08

    申请号:US13223409

    申请日:2011-09-01

    IPC分类号: G02B6/12

    摘要: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

    摘要翻译: 辐射发射装置(例如,激光器)包括被配置为产生沿着第一偏振方向线性偏振的辐射发射的有源区和由绝缘层和绝缘层上的金属层覆盖的器件面。 金属层限定了孔,通过该孔,来自有源区的辐射发射可通过该孔被传输并耦合到金属层的外侧上的表面等离子体。 孔的长轴与第一偏振方向不正交,并且顺序的特征部分被限定在器件面或金属层中或金属层中并与孔隔开,其中该系列特征被配置为 操纵表面等离子体激元并将表面等离子体激元以不同于第一偏振方向的第二偏振方向散射到远场中。

    QUANTUM CASCADE LASER
    7.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号:US20090213890A1

    公开(公告)日:2009-08-27

    申请号:US12395576

    申请日:2009-02-27

    IPC分类号: H01S5/343

    CPC分类号: H01S5/3402 B82Y20/00

    摘要: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.

    摘要翻译: 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,从级别2向下转换至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有不均匀的平方 波函数分布。

    Methods and apparatus for single-mode selection in quantum cascade lasers
    8.
    发明授权
    Methods and apparatus for single-mode selection in quantum cascade lasers 有权
    量子级联激光器中单模选择的方法和装置

    公开(公告)号:US08351481B2

    公开(公告)日:2013-01-08

    申请号:US13126576

    申请日:2009-11-05

    IPC分类号: H01S3/08

    摘要: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.

    摘要翻译: 用于改进量子级联激光器中单模选择的方法和装置。 在一个示例中,分布式反馈光栅包括折射率耦合和损耗耦合组件。 损耗耦合部件有助于通过在有源区域的顶部周期性地引入有损耗的半导体材料的薄层来在两种模式之间引入足够大的损耗差异,从两种可能的发射模式中选择一种模式。 有损层被掺杂到足以对两种模式之一引起相当大的自由载流子吸收损耗的水平,同时为两种模式中的另一种模式提供足够的增益。 在替代实施方案中,高掺杂层可以被诸如量子阱,量子线和量子点之类的其它低维度结构代替,具有显着的工程化内部吸收,以选择性地增加多种可能模式之一的自由载流子吸收损耗, 以方便单模操作。

    Quantum cascade laser
    9.
    发明授权
    Quantum cascade laser 有权
    量子级联激光器

    公开(公告)号:US08014430B2

    公开(公告)日:2011-09-06

    申请号:US12395576

    申请日:2009-02-27

    IPC分类号: H01S5/00

    CPC分类号: H01S5/3402 B82Y20/00

    摘要: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.

    摘要翻译: 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别(1和1'); 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中,基本设计还具有能量间隔 E54大约90 meV,1级和1级不必在空间上相互接近,只要等级2与这两个级别都有重大的重叠。 在第三版本中,对于从级别2向下转换,至少有三个最终级别(1,1'和1“)。级别1,1'和1”中的每一个具有非均匀平方波函数 分配。

    BROADLY TUNABLE SINGLE-MODE QUANTUM CASCADE LASER SOURCES AND SENSORS
    10.
    发明申请
    BROADLY TUNABLE SINGLE-MODE QUANTUM CASCADE LASER SOURCES AND SENSORS 有权
    广泛的单模单模量子CASCADE激光源和传感器

    公开(公告)号:US20080144677A1

    公开(公告)日:2008-06-19

    申请号:US11611819

    申请日:2006-12-15

    IPC分类号: H01S3/10

    摘要: A broadly tunable single-mode infrared laser source based on semiconductor lasers. The laser source has two parts: an array of closely-spaced DFB QCLs (or other semiconductor lasers) and a controller that can switch each of the individual lasers in the array on and off, set current for each of the lasers and, and control the temperature of the lasers in the array. The device can be used in portable broadband sensors to simultaneously detect a large number of compounds including chemical and biological agents. A microelectronic controller is combined with an array of individually-addressed DFB QCLs with slightly different DFB grating periods fabricated on the same broadband (or multiple wavelengths) QCL material. This allows building a compact source providing narrow-line broadly-tunable coherent radiation in the Infrared or Terahertz spectral range (as well as in the Ultraviolet and Visible spectral ranges, using semiconductor lasers with different active region design). The performance (tuning range, line width, power level) is comparable to that of external grating tunable semiconductor lasers, but the proposed design is much smaller and much easier to manufacture.

    摘要翻译: 基于半导体激光器的广泛可调单模红外激光源。 激光源具有两部分:紧密间隔的DFB QCL(或其他半导体激光器)的阵列以及能够切换阵列中各个激光器的每个开关的控制器,为每个激光器设置电流和控制 阵列中的激光器的温度。 该装置可用于便携式宽带传感器中以同时检测大量包括化学和生物试剂在内的化合物。 微电子控制器与在相同宽带(或多波长)QCL材料上制造的具有稍微不同的DFB光栅周期的单独寻址的DFB QCL阵列组合。 这样可以在红外或太赫兹光谱范围(以及使用具有不同有源区域设计的半导体激光器的紫外和可见光谱范围)中构建一个紧凑的源,提供窄线宽可调谐相干辐射。 性能(调谐范围,线宽,功率水平)与外部光栅可调谐半导体激光器的性能相当,但所提出的设计要小得多,制造容易得多。