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    Strained silicon MOS device with box layer between the source and drain regions
    5.
    发明申请
    Strained silicon MOS device with box layer between the source and drain regions 有权
    应变硅MOS器件，在源极和漏极区之间具有盒层

    公开(公告)号：US20070134859A1

    公开(公告)日：2007-06-14

    申请号：US11304351

    申请日：2005-12-14

    申请人： Giuseppe Curello ,  Hemant Deshpande ,  Sunit Tyagi ,  Mark Bohr

    发明人： Giuseppe Curello ,  Hemant Deshpande ,  Sunit Tyagi ,  Mark Bohr

    IPC分类号： H01L21/84

    CPC分类号： H01L29/66628 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7848 ,  H01L29/78639 ,  H01L29/78687

    摘要： A MOS device comprises a gate stack comprising a gate electrode disposed on a gate dielectric, a first spacer and a second spacer formed on laterally opposite sides of the gate stack, a source region proximate to the first spacer, a drain region proximate to the second spacer, and a channel region subjacent to the gate stack and disposed between the source region and the drain region. The MOS device of the invention further includes a buried oxide (BOX) region subjacent to the channel region and disposed between the source region and the drain region. The BOX region enables deeper source and drain regions to be formed to reduce transistor resistance and silicide spike defects while preventing gate edge junction parasitic capacitance.

    摘要翻译： MOS器件包括栅极堆叠，其包括设置在栅极电介质上的栅极电极，形成在栅极堆叠的横向相对侧上的第一间隔物和第二间隔物，靠近第一间隔物的源极区域，靠近第二间隔区的漏极区域 间隔物和位于栅叠层下方的沟道区，并设置在源区和漏区之间。 本发明的MOS器件还包括在沟道区域的下方并设置在源极区域和漏极区域之间的掩埋氧化物（BOX）区域。 BOX区域能够形成更深的源极和漏极区域，以减少晶体管电阻和硅化物尖峰缺陷，同时防止栅极边缘结的寄生电容。